Datasheet STB80NF03L-04 Datasheet (SGS Thomson Microelectronics)



STB80NF03L-04

N-CHANNEL 30V - 0.0035

TYPE V

DSS

ST B80NF03L- 04 30 V < 0. 004 Ω 80 A

■ TYPICALR

■ EXCEPTIONALdv/dtCAPABILITY

■ 100%AVALANCHETESTED

■ LOW THRESHOLDDRIVE

■ THROUGH-HOLE I2PAK (TO-262) POWER

DS(on)

= 0.0035 Ω

PACKAGEIN TUBE(SUFFIX ”-1”)

■ SURFACE-MOUNTINGD2PAK (TO-263)

POWERPACKAGEIN TUBE (NO SUFFIX)
OR IN TAPE& REEL (SUFFIX ”T4”)

DESCRIPTION

This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.

R

DS(on)

I

D

Ω

- 80A TO-262/TO-263

STripFET POWER MOSFET

PRELIMINARY DATA

3

2

1

I2PAK

TO-262

(suffix”-1”)

D2PAK

TO-263

(suffix”T4”)

INTERNAL SCHEMATIC DIAGRAM

3

1

APPLICATIONS

■ HIGHCURRENT, HIGH SPEEDSWITCHING

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ DC-DC& DC-AC CONVERTERS

■ AUTOMOTIVEENVIRONMENT(INJECTION,

ABS, AIR-BAG, LAMPDRIVERS,Etc. )

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

DM

P

dv/ dt Peak Diode Re c overy volt age sl ope 3.5 V/ns

T

(•) Pulse width limited by safe operating area (1)ISD≤ 80 A, di/dt ≤ 300 A/µs, VDD≤ V

March 2000

Dra in- sour c e Volt age ( VGS=0) 30 V

DS

Dra in- gat e Vol tage ( RGS=20kΩ)30V

DGR

Gat e-source V oltage

GS

I

Dra in Cu rr ent (c ontinuous) a t Tc=25oC80A

D

I

Dra in Cu rr ent (c ontinuous) a t Tc=100oC56A

D

20 V

±

(•) D rain Curr ent (pulsed ) 320 A

Tot al Dissipation at Tc=25oC 210 W

tot

Der ati ng Fac t or 1.43 W/

St orage Tempe r at ur e -65 to 175

stg

T

Max. O per at ing J unc t ion T emper at ure 175

j

(BR)DSS,Tj≤TJMAX

o

C

o

C

o

C

1/7

STB80NF03L-04

THERMAL DATA

R

thj-case

Rthj-a mb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Tem pe ra t ure For So ldering Purp ose

l

Avalanche Current, Repetitive or Not-Repetiti ve
(pulse width limited by T

Single Pul s e Avalan che Energy

AS

(starting T

=25oC, ID=IAR,VDD=15V)

j

max)

j

0.7

62.5

0.5

300

80 A

600 mJ

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 30 V

Break dow n Voltage

I

DSS

I

GSS

Zero Gate Volta ge
Drain Curr e nt (V

GS

Gat e- bod y Leak ag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc=125oC

V

DS

V

=± 20 V

GS

1

10

100 nA

±

ON(∗)

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250 µA11.52.5V
Sta t ic Drain-s ource On

Resistance

VGS=10V ID=40A

=4.5V ID=40A

V

GS

On State Drain Current VDS>I

D(on)xRDS(on)max

0.0035

0.004

80 A

0.004

0.0055ΩΩ

VGS=10V

DYNAMIC

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capaci t anc e

iss

Out put Capac it ance

oss

Reverse Tr ansfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=15 A 20 50 S

VDS=25V f=1MHz VGS= 0 7000

1700

600

µ
µA

pF
pF
pF

A

2/7

STB80NF03L-04

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

t

d(on)

t

Tur n-on Delay Tim e
Rise Tim e

r

VDD=15V ID=40A
R

=4.7

G

Ω

VGS=4.5V

50

230

(Resis t iv e Load, s ee fig. 3 )

Q
Q
Q

Tot al Gate Charge

g

Gat e- Source Charg e

gs

Gate-Drain Charge

gd

VDD=24V ID=80A VGS= 4.5 V 100

22
42

135 nC

SWITCHING OFF

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

t

d(off)

Tur n-of f Dela y Time

t

Fall T ime

f

VDD=15V ID=40A

=4.7 Ω VGS=4.5V

R

G

220
130

(Resis t iv e Load, s ee fig. 3 )

t

r(Voff)

t

t

Off-voltage Rise Time
Fall T ime

f

Cross-over T ime

c

V

=24V ID=80A

clamp

=4.7 Ω VGS=4.5V

R

G

(Indu ct iv e Load , se e fig. 5)

65
250
340

SOURCEDRAINDIODE

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

I

SDM

V

I

SD

Q

I

RRM

SD

t

Source-drain Current

(•)

Source-drain Current

80

320

(pulsed)

(∗)ForwardOnVoltage ISD=80A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 80 A di/dt = 100 A/µs

=15V Tj=150oC

V

DD

(see test circuit, fig. 5)

70

0.14
Charge
Reverse Recovery

4

Current

ns
ns

nC
nC

ns
ns

ns
ns
ns

A
A

ns

µC

A

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(•) Pulse width limited by safe operatingarea

3/7

STB80NF03L-04

Fig. 1:

UnclampedInductiveLoad Test Circuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2:

UnclampedInductive Waveform

Fig. 4: Gate Chargetest Circuit

Fig. 5:

Test CircuitFor InductiveLoad Switching

And Diode Recovery Times

4/7

TO-262 (I2PAK) MECHANICAL DATA

STB80NF03L-04

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

CA1

A

C2

B2

B

e

E

L1

L2

D

L

P011P5/E

5/7

STB80NF03L-04

TO-263 (D2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368
E 10 10.4 0.393 0.409
G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm inch

6/7

D

A

C2

DETAIL”A”

C

A2

DETAIL”A”

A1

B2

E

L2

L

L3

B

G

P011P6/E

STB80NF03L-04

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