Datasheet STB80NE03L-06-1 Datasheet (SGS Thomson Microelectronics)

STB80NE03L-06

STB80NE03L-06-1

N-CHANNEL 30V - 0.005Ω -80AD2PAK / I2PAK

STripFET™ PO WE R MOSFET

TYPE V

STB80NE03L-06
STB80NE03L-06-1

■ TYPICAL R

■ EXCEPTIONAL dv/dt CAPABILITY

■ LOW GATE CHARGE 100°C

■ 100% AVALANCHE TES TED

(on) = 0.005 Ω

DS

DSS

30 V
30 V

R

DS(on)

< 0.006 Ω
< 0.006 Ω

I

D

80 A
80 A

DESCRIPTION

This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting transis­tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re­markable manufacturing reproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ MOTOR CONTROL,AUDIO AMPLIFIERS

■ DC-DC & DC-AC CONVERTERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

1

D2PAK

3

I2PAK

3

2

1

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 7 V/ns

T

stg

T

j

(●) Pulse width limited by safe operating area

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

30 V

30 V
Gate- source Voltage ± 20 V
Drain Current (continuos) at TC= 25°C
Drain Current (continuos) at TC= 100°C

()

Drain Current (pulsed) 320 A
Total Dissipation at TC= 25°C

80 A

60 A

150 W

Derating Factor 1 W/°C

Storage Temperature
Max. Operating Junction Temperature

(1) ISD≤804A, di/dt ≤300A/µs, VDD≤ V

–55to175 °C

(BR)DSS,Tj≤TJMAX.

1/9February 2003

STB80NE03L-06 / STB80NE03L- 06-1

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source

= 25 °C, ID=IAR,VDD=15V)

j

ID= 250 µA, VGS= 0 30 V

80 A

600 mJ

Breakdown Voltage
Zero Gate Voltage

Drain Current (V

GS

Gate-body Leakage
Current (V

DS

=0)

=0)

V

= Max Rating

DS

= Max Rating, TC= 125 °C

V

DS

V

= ± 20 V ± 100 nA

GS

1µA

10 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

V

DS=VGS,ID

VGS=10V,ID=40A

= 4.5 V, ID=40A

V

GS

= 250µA

1 1.7 2.5 V

0.005 0.006 Ω

0.008 Ω

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS>I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 1500 pF
Reverse Transfer

Capacitance

D(on)xRDS(on)max,

ID=40A

V

=25V,f=1MHz,VGS=0

DS

30 50 S

6500 pF

500 pF

2/9

STB80NE03L-06 / STB80NE03L -06-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g

gs

gd

Turn-on Delay Time
Rise Time 260 350 ns
Total Gate Charge

Gate-Source Charge
Gate-Drain Charge

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t
t

f
c

Off-voltage Rise Time
Fall Time
Cross-over Time

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 80 A

(2)

Source-drain Current (pulsed) 320 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

=15V,ID=40A

DD

= 4.7Ω VGS=4.5V

R

G

(see test circuit, Figure 3)

=24V,ID= 80A,

V

DD

V

=5V

GS

=24V,ID=80A,

V

DD

=4.7Ω, VGS=5V

R

G

(see test circuit, Figure 3)

ISD=80A,VGS=0

= 80 A, di/dt = 100A/µs,

I

SD

VDD=15V,Tj= 150°C
(see test circuit, Figure 5)

40 55 ns

95

130 nC
30
44

70

165
250

95
220
340

1.5 V

75

0.14
4

nC
nC

ns
ns
ns

ns

nC

A

Safe Operating Area Thermal Impedence

3/9

STB80NE03L-06 / STB80NE03L- 06-1

Output Characteristics

Transfer Characteristics

Static Drain-source On ResistanceTransconductance

Gate Charge vs Gate-so urce Voltage

4/9

Capacitance Variations

STB80NE03L-06 / STB80NE03L -06-1

Normalized Gate Threshold Voltage vs
Temperature

Source-drain Diode Forward Characteristics

Normalized On Resistance vs Temperature

5/9

STB80NE03L-06 / STB80NE03L- 06-1

Fig. 2: Unclamped Induc tive WaveformFig. 1: Unclamped Inductive Load Test C ircuit

Fig. 3: Switching Times Tes t Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/9

STB80NE03L-06 / STB80NE03L -06-1

D2PAK MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm. inch

M 2.4 3.2 0.094 0.126

R 0.4 0.015

V2 0º 8º

3

7/9

1

STB80NE03L-06 / STB80NE03L- 06-1

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

8/9

A

A1

C2

B2

B

e

E

L1

L2

D

L

P011P5/E

STB80NE03L-06 / STB80NE03L -06-1

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