Datasheet STP7NK80Z, STP7NK80ZFP, STB7NK80Z-1, STB7NK80Z Datasheet (SGS Thomson Microelectronics)

STP7NK80Z - STP7NK80ZFP

STB7NK80Z - STB7NK80Z-1

N-CHANNEL800V-1.5Ω - 5.2A TO-220/TO-220FP/I2PAK/D2PAK

Zener-Protected SuperMESH™Power MOSFET

TYPE V

STP7NK80Z
STP7NK80ZFP
STB7NK80Z
STB7NK80Z-1

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GAT E CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VER Y GO OD MANUFACTURING

800 V
800 V
800 V
800 V

(on) = 1.5 Ω

DS

DSS

R

DS(on)

< 1.8 Ω
< 1.8 Ω
< 1.8 Ω
< 1.8 Ω

I

D

5.2 A

5.2 A

5.2 A

5.2 A

Pw

125 W

30 W
125 W
125 W

REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established s tri p­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis tak­en t o ensure a very good dv/dt capability for the
most demanding applicat ions. Such series comple­ments ST full range of high voltage MOSFETs in­cluding revolutionary MDm es h™ products.

TO-220

3

2

1

TO-220FP

D2PAK

I2PAK

INTERNAL SCHEMATIC DIAGRAM

3

2

1

3

1

APPLICATIONS

■ HIGH CURRENT,HIGH SPEED SWITCHING

■ SMPS FOR INDUSTRIAL APPLICATION.

■ LIGHT ING (PREHE ATING)

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP7NK80Z P7NK80Z TO-220 TUBE

STP7NK80ZFP P7NK80ZFP TO-220FP TUBE
STB7NK80ZT4 B7NK80Z

STB7NK80Z B7NK80Z

STB7NK80Z-1 B7NK80Z

2

PAK

D

2

PAK

D

2

PAK

I

(ONLY UNDER REQUEST)

TAPE & REEL

TUBE

TUBE

1/13August 2002

STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP7NK80Z
STB7NK80Z

STB7NK80Z-1

I

V

DM

P

V

DGR

V

I
I

TOT

DS

GS

D
D

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

800 V

800 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

()

Drain Current (pulsed) 20.8 20.8 (*) A
Total Dissipation at TC= 25°C

5.2 5.2 (*) A

3.3 3.3 (*) A

125 30 W

Derating Factor 1 0.24 W/°C

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

ISO

T

j

T

stg

() Pulse width limited by safe operating area
(1) I

≤5.2A, di/dt ≤200A/µs, VDD≤ V

SD

(*) Limited only by maximum temperature allowed

Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature

Storage Temperature

(BR)DSS,Tj≤TJMAX.

-55 to 150

-55 to 150

STP7NK80ZFP

°C
°C

THERMAL DATA

TO-220

D

2

I

2

PAK

PAK

TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1 4.2 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID=IAR,VDD=50V)

j

5.2 A

210 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown
Voltage

Igs=± 1mA (Open Drain) 30 V

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes havespecifically been designed to enhance not only the dev ice’s
ESD c apability, but also to make them sa fely absorb pos sible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener d iodes thus avoid t he
usage of external components.

2/13

STP7NK80Z - STP7NK 80Z FP - STB7NK80Z - STB7NK80Z-1

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OT HERWISE SPECIFIED)

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=15V,ID= 2.6 A 5 S

g

fs

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

C

oss eq.

C

iss

C

oss

C

rss

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

ID=1mA,VGS= 0 800 V

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

= 100µA

3 3.75 4.5 V

1

50

VGS=10V,ID= 2.6 A 1.5 1.8 Ω

=25V,f=1MHz,VGS=0 1138

V

DS

122

25

VGS=0V,VDS= 0V to 640V 50 pF

VDD=400V,ID= 2.6 A
RG= 4.7Ω VGS=10V

20
12

(Resistive Load see, Figure 3)

=640V,ID= 5.2 A,

V

DD

V

=10V

GS

40

7

56 nC

21

µA
µA

pF
pF
pF

ns
ns

nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

VDD= 400 V, ID= 2.6 A
R

=4.7ΩVGS=10V

G

45
22

(Resistive Load see, Figure 3)

t

r(Voff)

t
t

= 640V, ID= 5.2 A,

Off-voltage Rise Time

f

c

Fall Time
Cross-over Time

V

DD

RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)

12
10
20

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD= 5.2 A, VGS=0
I

SD

VDD=50V,Tj= 150°C
(see test circuit, Figure 5)

= 5.2 A, di/dt = 100A/µs

530

3.31

12.5

when VDSincreases from 0 to 80%

oss

5.2

20.8

1.6 V

ns
ns

ns
ns
ns

A
A

ns

µC

A

3/13

STP7NK80Z - STP7NK80ZF P - STB7NK80Z - STB 7NK80Z -1

Safe Operating Area For TO-220/D2PAK/I2PAK

Thermal Impedan ce For TO-220/D2PAK/I2PAK

Safe Operating Area For TO-220FP

Thermal Impedance For TO-220FP

Output Characteristics

4/13

Transfer Characteristics

STP7NK80Z - STP7NK 80Z FP - STB7NK80Z - STB7NK80Z-1

Transconductance

Gate Charge vs Gate-so urce Voltage Capacitance Variations

Static Drain-source On Resistance

Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature

5/13

STP7NK80Z - STP7NK80ZF P - STB7NK80Z - STB 7NK80Z -1

Source-drain Diode Forward Ch aracteristics

Maximum Avalanche Energy vs Temperature

Normalized BVDSS vs Temperature

6/13

STP7NK80Z - STP7NK 80Z FP - STB7NK80Z - STB7NK80Z-1

Fig. 2: Unclamped Induct ive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Di ode Recovery Times

Fig. 4: Gate Charge tes t Circuit

7/13

STP7NK80Z - STP7NK80ZF P - STB7NK80Z - STB 7NK80Z -1

E

P011C

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

8/13

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

STP7NK80Z - STP7NK 80Z FP - STB7NK80Z - STB7NK80Z-1

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L5

L4

9/13

STP7NK80Z - STP7NK80ZF P - STB7NK80Z - STB 7NK80Z -1

D2PAK MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm. inch

M 2.4 3.2 0.094 0.126

R 0.4 0.015
V2 0º 4º

3

10/13

1

STP7NK80Z - STP7NK 80Z FP - STB7NK80Z - STB7NK80Z-1

P011P5/E

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

A

A1

C2

B2

B

e

E

L1

L2

D

L

11/13

STP7NK80Z - STP7NK80ZF P - STB7NK80Z - STB 7NK80Z -1

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795

G 24.4 26.4 0.960 1.039

N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15 .9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1. 65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5. 0 0.189 0.197
P0 3.9 4.1 0. 153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0. 075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales ty pe

12/13

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

STP7NK80Z - STP7NK 80Z FP - STB7NK80Z - STB7NK80Z-1

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility f or t he
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its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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