Datasheet STP7NC80ZFP, STP7NC80Z, STB7NC80ZT4, STB7NC80Z-1, STB7NC80Z Datasheet (SGS Thomson Microelectronics)

1/13May 2003

STP7NC80Z - STP7NC80ZFP

STB7NC80Z - STB7NC80Z-1

N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK

Zener-Protected PowerMESH™III MOSFET

■ TYPICAL R

DS

(on) = 1.3Ω

■ EXTREMELY HIGH dv/dt AND CAPABILITY

GATE TO - SOURCE ZENER DIODES

■ 100% AVALANCHE TESTED

■ V ER Y LOW GATE INPUT RE SISTANCE

■ GAT E CHARGE MINIMIZED

DESCRIPTION

The t hird generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur­passed on-resistance per unitarea while in tegrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil­ity with higher ruggedness performance as reques t­ed by a large v ariety of single-switch applications.

APPLICATIONS

■ S INGLE -ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

■ WELDING EQUIPMENT

ORDERING INFORMATION

TYPE V

DSS

R

DS(on)

I

D

STP7NC80Z
STP7NC80ZFP
STB7NC80Z
STB7NC80Z-1

800 V
800 V
800 V
800 V

< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω

6.5 A

6.5 A

6.5 A

6.5 A

SALES TYPE MARKING PACKAGE PACKAGING

STP7NC80Z P7NC80Z TO-220 TUBE
STP7NC80ZFP P7NC80ZFP TO-220FP TUBE
STB7NC80ZT4 B7NC80Z

D

2

PAK

TAPE&REEL

STB7NC80Z-1 B7NC80Z

I

2

PAK

TUBE

TO-220 TO-220FP

1

2

3

I2PAK

(Tabless TO-220)

1

2

3

1

3

D2PAK

INTERNAL SCHEMATIC DIAGRAM

STP7NC80Z - STP7NC80ZF P - STB7NC80Z - STB 7NC80Z-1

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ABSOLUTE MAXIMUM RATINGS

() Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed

THERMAL DATA

AVALANCHE CHARACTERISTICS

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes hav e s pec if ically been des igned to enhance not only the dev ice’s
ESD capability, but also to make them safely absorb possibl e voltage transients tha t may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’ s integrity. These integrated Zener diodes thus avoid the
usage of external components.

Symbol Parameter Value Unit

STP7NC80Z
STB7NC80Z

STB7NC80Z-1

STP7NC80ZFP

V

DS

Drain-source Voltage (VGS=0)

800 V

V

DGR

Drain-gate Voltage (RGS=20kΩ)

800 V

V

GS

Gate- source Voltage ±25 V

I

D

Drain Current (continuous) at TC= 25°C

6.5 6.5 (*) A

I

D

Drain Current (continuous) at TC= 100°C

4 4(*) A

IDM()

Drain Current (pulsed) 26 26 (*) A

P

TOT

Total Dissipation at TC= 25°C

135 40 W

Derating Factor 1.08 0.32 W/°C

I

GS

Gate-source Current ±50 mA

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3KV

dv/dt Peak Diode Recovery voltage slope 3 V/ns

V

ISO

Insulation Withstand Voltage (DC) -- 2000 V

T

stg

Storage Temperature -65 to 150 °C

T

j

Max.Operating Junction Temperature 150 °C

TO-220 / D

2

PAK /

I

2

PAK

TO-220FP

Rthj-case Thermal Resistance Junction-case Max 0.93 3.13 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

300 °C

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

j

max)

6.5 A

E

AS

Single Pulse Avalanche Energy
(starting T

j

= 25 °C, ID=IAR,VDD=50V)

290 mJ

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown
Voltage

Igs=± 1mA (Open Drain) 25 V

αT Voltage Thermal Coefficient T=25°C Note(3)

1.3

10

-4

/°C

Rz Dynamic Resistance

I

D

=20mA,

90 Ω

3/13

STP7NC80Z - STP7NC 80Z FP - STB7NC80Z - STB7NC80Z-1

ELECTRICAL CHARACTERISTICS (T

CASE

=25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

DYNAMIC

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. ∆V

BV

=αT(25°-T) BV

GSO

(25°)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

ID= 250 µA, VGS= 0 800 V

∆BV

DSS

/∆TJBreakdown Voltage Temp.

Coefficient

ID=1mA,VGS= 0 0.9 V/°C

I

DSS

Zero Gate Voltage
Drain Current (V

GS

=0)

V

DS

= Max Rating

V

DS

= Max Rating, TC= 125 °C

1

50

µA
µA

I

GSS

Gate-body Leakage
Current (V

DS

=0)

V

GS

= ± 20V ±10 µA

V

GS(th)

Gate Threshold Voltage

V

DS=VGS,ID

= 250µA

345V

R

DS(on)

Static Drain-source On
Resistance

VGS=10V,ID= 3.3 A 1.3 1.5 Ω

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

(1) Forward Transconductance VDS>I

D(on)xRDS(on)max,

ID= 3.3 A

6S

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

V

DS

=25V,f=1MHz,VGS= 0 2350

164

17

pF
pF
pF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Delay Time
Rise Time

VDD=400V,ID=3A
R

G

= 4.7Ω VGS=10V

( see test circuit, Figure 3)

33
12

ns
ns

Q

g

Q

gs

Q

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

V

DD

=640V,ID=6A,

VGS=10V

43
12
15

58

nC
nC
nC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

f

t

c

Off-voltage Rise Time
Fall Time
Cross-over Time

V

DD

= 640 V, ID=6 A,
RG=4.7Ω, VGS= 10V
(see test circuit, Figure 5)

13
13
20

ns
ns
ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

(2)

Source-drain Current
Source-drain Current (pulsed)

6.5
26

A
A

V

SD

(1)

Forward On Voltage

ISD=6.1 A, VGS=0

1.6 V

t

rr

Q

rr

I

RRM

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

I

SD

= 6 A, di/dt = 100A/µs
VDD=40V,Tj= 150°C
(see test circuit, Figure 5)

680

6

18

ns

µC

A

STP7NC80Z - STP7NC80ZF P - STB7NC80Z - STB 7NC80Z-1

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Output Characteristics

Transfer Characteristics

Safe Operating Area For T O-220FP

Safe Operating Area For TO-220/I 2PAK Thermal Impedance For TO-220/D2PAK/I2PAK

Thermal Impedance For TO-220FP

5/13

STP7NC80Z - STP7NC 80Z FP - STB7NC80Z - STB7NC80Z-1

Normalized Gate Threshold Voltage vs Temp.

Capacitance Variations

Normalized On Resistance vs Temperature

Gate Charge vs Gate-so urc e V oltage

Static Drain-source On ResistanceTransconductance

STP7NC80Z - STP7NC80ZF P - STB7NC80Z - STB 7NC80Z-1

6/13

Source-drain Diode Forward Characteristics

7/13

STP7NC80Z - STP7NC 80Z FP - STB7NC80Z - STB7NC80Z-1

Fig. 5: Test Circuit For Induct ive Load Switching

And Di ode Recovery Times

Fig. 4: Gate Charge test Circuit

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

STP7NC80Z - STP7NC80ZF P - STB7NC80Z - STB 7NC80Z-1

8/13

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

L6

A

C

D

E

D1

F

G

L7

L2

Dia.

F1

L5

L4

H2

L9

F2

G1

TO-220 MECHANICAL DATA

P011C

9/13

STP7NC80Z - STP7NC 80Z FP - STB7NC80Z - STB7NC80Z-1

L2

A

B

D

E

H

G

L6

¯

F

L3

G1

123

F2

F1

L7

L4

L5

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

TO-220FP MECHANICAL DATA

STP7NC80Z - STP7NC80ZF P - STB7NC80Z - STB 7NC80Z-1

10/13

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

L

L1

B2

B

D

E

A

C2

C

A1

L2

e

P011P5/E

TO-262 (I2PAK) MECHANICAL DATA

11/13

STP7NC80Z - STP7NC 80Z FP - STB7NC80Z - STB7NC80Z-1

1

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625

L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126
R 0.4 0.015

V2 0º 4º

D2PAK MECHANICAL DATA

3

STP7NC80Z - STP7NC80ZF P - STB7NC80Z - STB 7NC80Z-1

12/13

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

D2PAK FOOTPRINT

* on sales type

DIM.

mm inch

MIN. MAX. MIN. MAX.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

BASE QTY BULK QTY

1000 1000

REEL MECHANICAL DATA

DIM.

mm inch

MIN. MAX. MIN. MAX.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0. 153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0. 075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

TAPE MECHANICAL DATA

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STP7NC80Z - STP7NC 80Z FP - STB7NC80Z - STB7NC80Z-1

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