Datasheet STP7NC70Z, STP7NC70ZFP, STB7NC70Z-1, STB7NC70Z, STB7NC70ZT4 Datasheet (SGS Thomson Microelectronics)

1/13May 2003

STP7NC70Z - STP7NC70ZFP

STB7NC70Z - STB7NC70Z-1

N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK

Zener-Protected PowerMESH™III MOSFET

■ TYPICAL R

DS

(on) = 1.1Ω

■ EXTREMELYHIGHdv/dtAND CAPABILITYGATE

TO - SOURCE ZENER DIODES

■ 100% AVALANCHE TE S TED

■ VERY LOW GATE INPUT RESISTANCE

■ GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to­back Zener diodes between gate and source. Such ar­rangement gives extra ESD capability with higher rug­gedness performance as requested by a large variety
of single-switch applications .

APPLICATIONS

■ SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

■ WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE V

DSS

R

DS(on)

I

D

STP7NC70Z/FP 700V < 1.38Ω 6A
STB7NC70Z/-1 700V < 1.38Ω 6A

Symbol Parameter Value Unit

STP(B)7NC70Z(-1) STP7NC70ZFP

V

DS

Drain-source Voltage (VGS=0)

700 V

V

DGR

Drain-gate Voltage (RGS=20kΩ)

700 V

V

GS

Gate- source Voltage ± 25 V

I

D

Drain Current (continuous) at TC= 25°C

6 6(*) A

I

D

Drain Current (continuous) at TC= 100°C

3.7 3.7(*) A

I

DM

(1)

Drain Current (pulsed) 24 24 A

P

TOT

Total Dissipation at TC= 25°C

125 40 W

Derating Factor 1 0.32 W/°C

I

GS

Gate-source Current ±50 mA

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=15KΩ) 3KV

dv/dt Peak Diode Recovery voltage slope 3 V/ns

V

ISO

Insulation Withstand Voltage (DC) -- 2000 V

T

stg

Storage Temperature –65 to 150 °C

T

j

Max. Operating Junction Temperature 150 °C

(1)ISD≤6A, di/dt≤100A/µs, VDD≤ V

(BR)DSS,Tj≤TJMAX

(2).Limited only by maximum temperature allowed

TO-220

1

2

3

TO-220FP

1

2

3

I2PAK

(Tabless TO-220)

1

3

D2PAK

STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1

2/13

THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

TO-220 / D2PAK /

I

2

PAK

TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1 3.13 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose 300 °C

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

j

max)

6A

E

AS

Single Pulse Avalanche Energy
(starting T

j

= 25 °C, ID=IAR,VDD=50V)

238 mJ

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

ID= 250 µA, VGS= 0 700 V

∆BV

DSS

/∆TJBreakdown Voltage Temp.

Coefficient

ID=1mA,VGS= 0 0.8 V/°C

I

DSS

Zero Gate Voltage
Drain Current (V

GS

=0)

V

DS

= Max Rating

1µA

V

DS

= Max Rating, TC= 125 °C

50 µA

I

GSS

Gate-body Leakage
Current (V

DS

=0)

V

GS

= ±20V ±10 µA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold Voltage

V

DS=VGS,ID

= 250µA

345V

R

DS(on)

Static Drain-source On
Resistance

VGS=10V,ID= 3.5 A

1.1 1.38 Ω

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

(1)

Forward Transconductance

V

DS>ID(on)xRDS(on)max,

ID= 3.5A

7S

C

iss

Input Capacitance

V

DS

=25V,f=1MHz,VGS=0

1840 pF

C

oss

Output Capacitance 140 pF

C

rss

Reverse Transfer
Capacitance

18 pF

3/13

STP7NC70Z - STP7NC70Z FP - STB7NC70Z - STB7NC70Z-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

GATE-SOURCE ZENER DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. ∆V

BV

= αT(25°-T)BV

GSO

(25°)

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The bui lt-in back-to-back Zener diodes have specificall y been designed to enhanc e not only the device’ s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to source. In this respect the Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Turn-on Delay Time
Rise Time

VDD=350V,ID= 3.5 A
R

G

= 4.7Ω VGS=10V

(see test circuit, Figure 3)

24 ns

t

r

8ns

Q

g

Total Gate Charge

V

DD

=560V,ID= 7A,

V

GS

=10V

47 66 nC

Q

gs

Gate-Source Charge 11 nC

Q

gd

Gate-Drain Charge 19 nC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

Off-voltage Rise Time

V

DD

= 560V, ID=7A,

R

G

=4.7Ω, VGS= 10V

(see test circuit, Figure 5)

11 ns

t

f

Fall Time 10 ns

t

c

Cross-over Time 19 ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

Source-drain Current 6 A

I

SDM

(2)

Source-drain Current (pulsed) 24 A

VSD(1)

Forward On Voltage

ISD= 6 A, VGS=0

1.6 V

t

rr

Reverse Recovery Time

I

SD

= 7A, di/dt = 100A/µs,

V

DD

=50V,Tj= 150°C

(see test circuit, Figure 5)

575 ns

Q

rr

Reverse Recovery Charge 5.8 µC

I

RRM

Reverse Recovery Current 20 A

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown
Voltage

Igs=± 1mA (Open Drain) 25 V

αT Voltage Thermal Coefficient T=25°C Note(3) 1.3

10

-4

/°C

Rz Dynamic Resistance

I

D

=50mA,VGS=0

90 Ω

STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1

4/13

Transfer Characteristics

Thermal Impedance For TO-220/D2PAK/I2PAK

Safe Operating Area For TO-220/D2PAK/I2PAK Safe Operating Area For TO-220FP

Thermal Impedance For TO-220FP

Output Characteristics

5/13

STP7NC70Z - STP7NC70Z FP - STB7NC70Z - STB7NC70Z-1

Normalized On Re sistance vs Temperature

Gate Charge vs Gate-so urc e V oltage

Transconductance Static Drain-source On Resistance

Capacitance Variations

Normalized Gate Threshold Voltage vs Temp.

STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1

6/13

Source-drain Diode Forward Characteristics

7/13

STP7NC70Z - STP7NC70Z FP - STB7NC70Z - STB7NC70Z-1

Fig. 5: Test Circuit For I nduc tive Load Switching

And Diode Recovery Times

Fig. 4: Gate Charge te st Circuit

Fig. 2: Unclamped Induct ive WaveformFig. 1: Unclamped Inductiv e Load Test Circuit

Fig. 3: Switching Times Test Circuits For

Resistive Load

STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1

8/13

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

TO-220 MECHANICAL DATA

9/13

STP7NC70Z - STP7NC70Z FP - STB7NC70Z - STB7NC70Z-1

L2

A

B

D

E

H

G

L6

¯

F

L3

G1

123

F2

F1

L7

L4

L5

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

TO-220FP MECHANICAL DATA

STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1

10/13

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181

A1 2.40 2.72 0.094 0.107

b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c 0.49 0.70 0.019 0.027

c2 1.23 1.32 0.048 0.052

D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

E 10 10.40 0.393 0.410

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055

TO-262 (I2PAK) MECHANICAL DATA

11/13

STP7NC70Z - STP7NC70Z FP - STB7NC70Z - STB7NC70Z-1

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368
E 10 10.4 0.393 0.409
G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

L2

L3

L

B2

B

G

E

A

C2

D

C

A1

DETAIL "A"

DETAIL "A"

A2

P011P6/E

TO-263 (D2PAK) MECHANICAL DATA

STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1

12/13

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

D2PAK FOOTPRINT

* on sales type

DIM.

mm inch

MIN. MAX. MIN. MAX.

A 330 12.992
B 1.5 0.059
C 12.8 13. 2 0.504 0.520

D 20.2 0795
G 24.4 26.4 0. 960 1.039
N 100 3.937

T 30.4 1.197

BASE QTY BULK QTY

1000 1000

REEL MECHANICAL DATA

DIM.

mm inch

MIN. MAX. MIN. MAX.

A0 10.5 10.7 0.413 0.421
B0 15. 7 15.9 0.618 0.626

D 1.5 1. 6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

TAPE MECHANICAL DATA

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STP7NC70Z - STP7NC70Z FP - STB7NC70Z - STB7NC70Z-1

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