Datasheet stb70nf3ll Datasheet

Low gate charge STripFET™ II Power MOSFET

General features

Type V

STB70NF3LL 30V < 0.0095Ω 70A

DSS

R

DS(on)

STB70NF3LL

N-channel 30V - 0.0075Ω - 70A - D2PA K

I

D

■ Optimal R

■ Conduction losses reduced

■ Switching losses reduced

x Qg trade-off @ 4.5V

DS(on)

Description

This application specific Power MOSFET is the
third genaration of STMicroelectronis unique
"Single Feature Size™" strip-based process. The
resulting transistor shows the best trade-off
between on-resistance and gate charge. When
used as high and low side in buck regulators, it
gives the best performance in terms of both
conduction and switching losses. This is
extremely important for motherboards where fast
switching and high efficiency are of paramount
importance.

Applications

■ Switching application

3

1

D²PAK

Internal schematic diagram

Order codes

Part number Marking Package Packaging

2

STB70NF3LLT4 B70NF3LL@ D

July 2006 Rev 7 1/13

PAK Tape & reel

www.st.com

13

Contents STB70NF3LL

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13

STB70NF3LL Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

V

I

P

V

DGR

V

I

D

DM

DS

GS

(1)

I

D

TOT

Drain-source voltage (VGS = 0) 30 V

Drain-gate voltage (RGS = 20 kΩ)30V

Gate- source voltage ± 16 V

Drain current (continuous) at TC = 25°C 70 A

Drain current (continuous) at TC = 100°C 50 A

(2)

Drain current (pulsed) 280 A

Total dissipation at TC = 25°C 100 W

Derating factor 0.67 W/°C

(3)

dv/dt

E

AS

T

stg

T

1. Current limited by the package

2. Pulse width limited by safe operating area

3. ISD ≤70A, di/dt ≤350A/µs, VDD ≤ V

4. Starting TJ = 25 oC, ID = 35A, VDD = 25V

Peak diode recovery voltage slope 5.5 V/ns

(4)

Single pulse avalanche energy 500 mJ

Storage temperature

Operating junction temperature

J

(BR)DSS

Table 2. Thermal data

, TJ ≤ T

-55 to 175 °C

JMAX

Symbol Parameter Value Unit

R

thJC

R

thJA

T

Thermal resistance junction-case Max 1.5 °C/W

Thermal resistance junction-ambient Max 62.5 °C/W

Maximum lead temperature for soldering

l

purpose

300 °C

3/13

Electrical characteristics STB70NF3LL

2 Electrical characteristics

(T

=25°C unless otherwise specified)

CASE

Table 3. On/off states

Symbol Parameter Test conditions Min Typ Max Unit

DSS

Drain-source
Breakdown voltage

Zero gate voltage
Drain current (VGS = 0)

Gate-body leakage
Current (V

DS

= 0)

ID = 250 µA, VGS = 0 30 V

VDS = Max rating
VDS = Max rating

= 125°C

T

C

V

= ± 16 V ±100 nA

GS

1

10

Gate threshold voltage VDS = VGS ID = 250µA 1 V

Static drain-source on
resistance

= 10V ID = 35A

V

GS

VGS = 4.5V ID = 18A

0.0075

0.010

0.0095

0.012ΩΩ

V

(BR)DSS

I

I

GSS

V

GS(th)

R

DS(on)

Table 4. Dynamic

Symbol Parameter Test conditions Min Typ Max Unit

Forward

g

fs

Transconductance

C

C

C

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

= 15V ID=35A 25 S

V

DS

1650

= 25V f = 1MHz VGS = 0

V

DS

540
130

µA
µA

pF
pF
pF

4/13

STB70NF3LL Electrical characteristics

Table 5. Switching times

Symbol Parameter Test conditions Min Typ Max Unit

t

d(on)

Q
Q
Q

t

d(off)

= 15V ID = 35A

V

t

Turn-on delay time

r

Rise time

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

Turn-off delay time

t

Fall time

f

DD

=4.7Ω VGS = 4.5V

R

G

(Resistive Load Figure 16)

= 15V ID= 70A

V

DD

VGS= 4.5V

VDD = 15 V ID = 35 A
RG=4.7Ω, V

GS

= 4.5 V

23

165

24

8.5
12

27
28

33 nC

(Resistive Load Figure 16)

Table 6. Source drain diode

Symbol Parameter Test conditions Min Typ Max Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Source-drain current
Source-drain current

(1)

(pulsed)

(2)

Forward on voltage ISD = 70 A VGS = 0 1.3 V

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

ISD = 70 A di/dt = 100A/µs
VDD = 20 V TJ = 150°C
(see test circuit Figure 14)

42
52

2.5

70

280

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

5/13

Electrical characteristics STB70NF3LL

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance

Figure 3. Output characterisics Figure 4. Transfer characteristics

Figure 5. Source-drain diode forward

6/13

characteristics

Figure 6. Static drain-source on resistance

STB70NF3LL Electrical characteristics

Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage

vs temperature

Figure 11. Normalized breakdown vs

temperature

Figure 10. Normalized on resistance vs

temperature

7/13

Test circuit STB70NF3LL

3 Test circuit

Figure 12. Switching times test circuit for

resistive load

Figure 14. Test circuit for inductive load

switching and diode recovery times

Figure 13. Gate charge test circuit

Figure 15. Unclamped Inductive load test

circuit

Figure 16. Unclamped inductive waveform

8/13

STB70NF3LL Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

9/13

Package mechanical data STB70NF3LL

D2PAK MECHANICAL DATA

TO-247 MECHANICAL DATA

DIM.

A 4.4 4.6 0.1 73 0.181

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.0 44 0.067

C 0.45 0.6 0.0 17 0.023

C2 1.23 1.36 0.0 48 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.3 93

E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625

L2 1.27 1.4 0.050 0.055

L3 1 .4 1.7 5 0.055 0.068

M 2.4 3.2 0.094 0.126

R0.4 0.015

V2 0º 4º

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

3

10/13

1

STB70NF3LL Packing mechanical data

5 Packing mechanical data

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0795

G 24.4 26.4 0.960 1.039

N 100 3.937

T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421

B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11. 4 11. 6 0.449 0.456

K0 4.8 5.0 0.189 0.197

P0 3.9 4.1 0.153 0.161

P1 11.9 12.1 0.468 0.476

P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

11/13

Revision history STB70NF3LL

6 Revision history

Table 7. Revision history

Date Revision Changes

21-Jun-2004 6 Preliminary version

25-Jul-2006 7 New template, no content change

12/13

STB70NF3LL

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

© 2006 STMicroelectronics - All rights reserved

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

13/13