Datasheet stb20nm60d Datasheet

N-channel 600V - 0.26Ω - 20A - D2PA K

General features

Type V

STB20NM60D 600V <0.29Ω 20A 45W

■ High dv/dt and avalanche capabilities

■ 100% Avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Tight process control and high manufacturing

yields

DSS

R

DS(on)ID

Pw

STB20NM60D

FDmesh™ Power MOSFET

3

1

D²PAK

Description

The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.

Applications

■ Switching application

Order codes

Part number Marking Package Packaging

STB20NM60D B20NM60D D²PAK Tape & reel

Internal schematic diagram

June 2006 Rev 1 1/13

www.st.com

13

Contents STB20NM60D

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13

STB20NM60D Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

Drain-source voltage (VGS = 0) 600 V

DS

Drain-gate voltage (RGS = 20 kΩ) 600 V

DGR

Gate- source voltage ± 30 V

GS

Drain current (continuous) at TC = 25°C 20 A

I

D

I

Drain current (continuous) at TC = 100°C 12.6 A

D

(1)

Drain current (pulsed) 80 A

Total dissipation at TC = 25°C 192 W

TOT

V

I

DM

P

V

V

Derating factor 1.20 W/°C

(2)

dv/dt

T

1. Pulse width limited by safe operating area

2. ISD < 20A, di/dt < 400A/µs, VDD = 80%V

Table 2. Thermal resistance

Peak diode recovery voltage slope 20 V/ns

T

Operating junction temperature

j

Storage temperature

stg

(BR)DSS

– 65 to 150

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case Max 0.65 °C/W

Rthj-amb Thermal resistance junction-ambient Max 62.5 °C/W

Maximum lead temperature for soldering

T

l

purpose

Table 3. Avalanche data

300 °C

°C
°C

Symbol Parameter Value Unit

I

E

Avalanche current, repetitive or not-repetitive

AR

(pulse width limited by T

max)

j

Single pulse avalanche energy

AS

(starting T

= 25 °C, ID = IAR, VDD = 35 V)

j

10 A

700 mJ

3/13

Electrical characteristics STB20NM60D

2 Electrical characteristics

(T

Table 4. On/off states

=25°C unless otherwise specified)

CASE

Symbol Parameter Test condictions Min Typ Max Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Table 5. Dynamic

Drain-source breakdown
voltage

Zero gate voltage
drain current (VGS = 0)

Gate-body leakage
current (VDS = 0)

Gate threshold voltage VDS = VGS, ID = 250µA 3 4 5 V

Static drain-source on
resistance

I

= 250µA, VGS = 0 600 V

D

VDS = Max rating

110µA

VDS = Max rating, TC = 125 °C

VGS = ±30V

= 10V, ID = 10A 0.26 0.29 Ω

V

GS

±10

0

Symbol Parameter Test condictions Min Typ Max Unit

g

C

oss eq.

> I

(1)

fs

C
C
C

Forward transconductance

Input capacitance

iss

Output capacitance

oss

Reverse transfer capacitance

rss

(2)

Equivalent output capacitance VGS = 0V, VDS = 0V to 480V 190 pF

V

DS

ID=10A

VDS = 25V, f = 1 MHz, VGS = 0

D(on)

x R

DS(on)max,

9S

1300

500

35

f=1 MHz Gate DC Bias = 0

R

Gate input resistance

G

Test signal level = 20mV

2.7 Ω

open drain

Q
Q
Q

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

2. C

oss eq.

increases from 0 to 80%

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

is defined as a constant equivalent capacitance giving the same charging time as C

= 480V, ID = 20A,

V

DD

= 10V

V

GS

(see Figure 13)

37
10
17

when VDS

oss

52 nC

µA

µA

pF
pF
pF

nC
nC

4/13

STB20NM60D Electrical characteristics

Table 6. Switching times

Symbol Parameter Test condictions Min. Typ. Max. Unit

= 300V, ID = 10A

V

t

d(on)

t

r(Voff)

Table 7. Source drain diode

Turn-on delay time

t

Rise time

r

Off-voltage rise time

t

Fall time

f

t

Cross-over time

c

Symbol Parameter Test condictions Min Typ. Max Unit

DD

RG=4.7Ω VGS = 10V

(see Figure 12)

= 480 V, ID = 20A,

V

DD

RG=4.7Ω, V

GS

= 10V

(see Figure 12)

25
12

22
30

ns
ns

8

ns
ns
ns

I

SD

I

SDM

V

SD

t

Q

I

RRM

t

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Source-drain current

(1)

Source-drain current (pulsed)

(2)

Forward on voltage ISD = 20 A, VGS = 0 1.5 V

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

= 20 A, Tj = 25°C

I

SD

di/dt =100A/µs,V

DD

=60V

(see Figure 17)

ISD = 20 A, Tj = 150°C
di/dt =100A/µs,V

DD

=60V

(see Figure 17)

240

1800

16

396

2960

20

2080A

A

ns

nC

A

ns

nC

A

5/13

Electrical characteristics STB20NM60D

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance

Figure 3. Output characterisics Figure 4. Transfer characteristics

Figure 5. Transconductance Figure 6. Static drain-source on resistance

6/13

STB20NM60D Electrical characteristics

Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage

vs temperature

Figure 11. Source-drain diode forward

characteristics

Figure 10. Normalized on resistance vs

temperature

7/13

Test circuit STB20NM60D

3 Test circuit

Figure 12. Switching times test circuit for

resistive load

Figure 14. Test circuit for inductive load

switching and diode recovery times

Figure 13. Gate charge test circuit

Figure 15. Unclamped inductive load test

circuit

Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform

8/13

STB20NM60D Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

9/13

Package mechanical data STB20NM60D

D2PAK MECHANICAL DATA

TO-247 MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393

E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625

L2 1.27 1.4 0.050 0.055

L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126

R0.4 0.015

V2 0º 4º

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

3

10/13

1

STB20NM60D Packaging mechanical data

5 Packaging mechanical data

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0795

G 24.4 26.4 0.960 1.039

N 100 3.937

T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421

B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456

K0 4.8 5.0 0.189 0.197

P0 3.9 4.1 0.153 0.161

P1 11.9 12.1 0.468 0.476

P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

11/13

Revision history STB20NM60D

6 Revision history

Table 8. Revision history

Date Revision Changes

08-Jun-2006 1 First release

12/13

STB20NM60D

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