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1/11March 2002
STP11NM60A
STP11NM6 0AFP - STB11NM6 0A- 1
N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK
MDmesh™Power MOSFET
n
TYPICAL RDS(on) = 0.4Ω
n
HIGH dv/dt
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESIST ANC E
DESCRIPTION
The MDmesh™
is a new revolutionary MOSFET
technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt. The adoption
of the Company’s proprietary strip technique yields
overall dynamic performance that is significantly
better than that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ORDERING INFORMATION
TYPE V
DSS
R
DS(on)
I
D
STP11NM60A
STP11NM60AFP
STB11NM60A-1
600 V
600 V
600 V
<0.45Ω
<0.45Ω
<0.45Ω
11 A
11 A
11 A
SALES TYPE MARKING PACKAGE PACKAGING
STP11NM60A P11NM60A TO-220 TUBE
STP11NM60AFP P11NM60AFP TO-220FP TUBE
STB11NM60A-1 B11NM60A
I
2
PAK
TUBE
TO-220
1
2
3
1
2
3
I2PAK
1
2
3
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
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STP11NM60A/STP11NM60AF P/ST B 11NM60A-1
2/11
ABSOLUTE MAXIMUM RATINGS
(l) Pulse wi dth limited by saf e operating ar ea
(1) I
SD
≤11A, di/dt ≤200A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX.
(*) Limited only by maximum temperature allowed
THERMA L D ATA
ON/OFF
Symbol Parameter Value Unit
STP11NM60A
STB11NM60A-1
STP11NM60AF P
V
DS
Drain-source Voltage (VGS = 0)
600 V
V
DGR
Drain-gate Voltage (RGS = 20 kΩ)
600 V
V
GS
Gate- source Voltage ± 30 V
I
D
Drain Current (continuous) at TC = 25°C
11 11 (*) A
I
D
Drain Current (continuous) at TC = 100°C
7 7 (*) A
I
DM
(l)
Drain Current (pulsed) 44 44 (*) A
P
TOT
Total Dissipation at TC = 25°C
110 35 W
Derating Factor 0.88 0.28 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
V
ISO
Insulation Withstand Voltage (DC) - 2500 V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
TO-220 / I
2
PAK
TO-220-FP
Rthj-case Thermal Resistance Junction-case Max 1.13 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300
°C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0 600 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
VDS = Max Rating, TC = 125 °C
1
10
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20V ±100 nA
V
GS(th)
Gate Threshold Voltage
V
DS
= VGS, ID = 250µA
234V
R
DS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 5.5 A 0.4 0.45 Ω
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3/11
STP11NM60A/STP11NM60AF P/ST B 11N M 60A-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.
2. Pulse width li mited by safe operating area .
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when VDS increase s fr om 0 to 80%
V
DSS
.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance VDS = 15 V, ID= 5.5 A 10 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, VGS = 0 1211
248
21
pF
pF
pF
C
oss eq.
(3) Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 480V 116 pF
R
G
Gate Input Resistance f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.9 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
VDD = 300 V, ID = 5.5 A
RG= 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
14
15
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480V, ID = 11 A,
VGS = 10V
35
9
14
49
nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480V, ID = 11 A,
RG=4.7Ω, V
GS
= 10V
(Inductive Load see, Figure 5)
39
10
20
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
11
44
A
A
VSD (1)
Forward On Voltage
ISD = 11 A, VGS = 0
1.5 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 11 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
560
5.7
20.5
ns
µC
A
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STP11NM60A/STP11NM60AF P/ST B 11NM60A-1
4/11
Thermal Impedan ce for TO- 2 20 / I2PAK
Transfer CharacteristicsOutput Characteristics
Safe Operating Area for TO-220FPSafe Operating Area for TO-220 / I2PAK
Thermal Impedance for TO-220FP
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5/11
STP11NM60A/STP11NM60AF P/ST B 11N M 60A-1
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Capacitance Variations
Gate Charge vs Gate-source Voltage
Transconductance
Static Drain-source On Resistance
Page 6
STP11NM60A/STP11NM60AF P/ST B 11NM60A-1
6/11
Source-drain Diode Forward Characteristics
Page 7
7/11
STP11NM60A/STP11NM60AF P/ST B 11N M 60A-1
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
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STP11NM60A/STP11NM60AF P/ST B 11NM60A-1
8/11
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
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9/11
STP11NM60A/STP11NM60AF P/ST B 11N M 60A-1
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
Page 10
STP11NM60A/STP11NM60AF P/ST B 11NM60A-1
10/11
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409
L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055
L
L1
B2
B
D
E
A
C2
C
A1
L2
e
P011P5/E
TO-262 (I2PAK) MECHANICAL DATA
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11/11
STP11NM60A/STP11NM60AF P/ST B 11N M 60A-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibilit y for the
consequences of use of su ch in formation nor for any in fringement of paten ts or o ther rights of third parties w hich may result from
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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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systems without express written approval of STMicroelectronics.
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