Datasheet STP11NM60FP, STB11NM60-1, STB11NM60 Datasheet (SGS Thomson Microelectronics)

STP11NM60 - STP11NM60FP

STB11NM60 - STB11NM60-1

N-CHANNEL600V - 0.4Ω-11ATO-220/TO-220FP/D2PAK/I2PAK

MDmesh™Power MOSFET

TYPE V

STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1



TYPICAL RDS(on) = 0.4Ω



HIGH dv/dt AND AVALANCHE CA PABILITIES



100% AVALANCHE TESTED



LOW INPUT CAPACITANCE AND GATE

DSS

600 V
600 V
600 V
600 V

R

DS(on)

< 0.45 Ω
< 0.45 Ω
< 0.45 Ω
< 0.45 Ω

I

D

11 A
11 A
11 A
11 A

CHARGE



LOW GATE INPUT RESISTANCE

DESCRIPTION

The MDmesh ™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro­cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstandinglow
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performancethat is significantly better than
that of similar competition’s products.

APPLICATIONS

The MDmesh™ family isvery suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.

3

2

1

TO-220

1

D2PAK

3

TO-220FP

I2PAK

INTERNAL SCHEMATIC DIAGRAM

3

2

1

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP(B)11NM60(-1) STP11NM60FP

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns

V

ISO

T

stg

T

j

(•)Pulse width limited by safe operating area

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

600 V

600 V
Gate- source Voltage ±30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

()

Drain Current (pulsed) 44 44 (*) A
Total Dissipation at TC= 25°C

11 11 (*) A

7 7 (*) A

160 35 W

Derating Factor 1.28 0.28 W/°C

Insulation Winthstand Voltage (DC) -- 2500 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(*)Limited only by maximum temperature allowed

<11A, di/dt<400A/µs, VDD<V

(1)I

SD

(BR)DSS,TJ<TJMAX

1/12May 2003

STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1

THERMAL DATA

TO-220/D2PAK/I2PAK

Rthj-case Thermal Resistance Junction-case Max 0.78 3.57 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose 300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID=IAR,VDD=50V)

j

TO-220FP

5.5 A

350 mJ

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID= 250 µA, VGS= 0 600 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

=0)

=0)

V

= Max Rating

DS

= Max Rating, TC= 125 °C

V

DS

V

= ±30V ±100 nA

GS

1µA

10 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

DS=VGS,ID

VGS=10V,ID= 5.5A

= 250µA

345V

0.4 0.45 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS>I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 230 pF
Reverse Transfer

Capacitance

C

(2) Equivalent Output

oss eq.

Capacitance

R

G

1. Pulsed:Pulse duration = 300 µs, duty cycle1.5%.

2. C

Gate Input Resistance f=1 MHz Gate DC Bias = 0

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

V

.

DSS

D(on)xRDS(on)max,

ID= 5.5A

V

=25V,f=1MHz,VGS=0

DS

VGS=0V,VDS= 0V to 480V 100 pF

Test Signal Level = 20mV
Open Drain

5.2 S

1000 pF

25 pF

1.6 Ω

when VDSincreases from 0 to 80%

oss

2/12

STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q

Q

Q

t

r

gs

gd

Turn-on Delay Time
Rise Time 20 ns
Total Gate Charge

g

Gate-Source Charge 10 nC
Gate-Drain Charge 15 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

f

t

c

Off-voltage Rise Time
Fall Time 11 ns
Cross-over Time 19 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

rrm

t

rr

Q

rr

I

rrm

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 11 A

(2)

Source-drain Current (pulsed) 44 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

Safe Operating Area for TO-2 20/D2PAK/I2PAK Safe Operating Area for TO-220FP

= 300V, ID= 5.5A

DD

= 4.7Ω VGS=10V

R

G

(see test circuit, Figure 3)
V

= 400V, ID=11A,

DD

VGS=10V

V

=400V,ID= 11A,

DD

= 4.7Ω, VGS=10V

R

G

(see test circuit, Figure 5)

ISD=11A,VGS=0

= 11A, di/dt = 100A/µs,

I

SD

VDD= 100 V, Tj= 25°C
(see test circuit, Figure 5)

I

= 11A, di/dt = 100A/µs,

SD

V

= 100 V, Tj= 150°C

DD

(see test circuit, Figure 5)

20 ns

30 nC

6ns

1.5 V

390

3.8

19.5
570

5.7
20

ns

µC

A

ns

µC

A

3/12

STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1

Thermal Impedance for TO-220/D2PAK/I2PA K

Thermal Impedance for TO-220FP

Transfer CharacteristicsOutput Characteristics

Transconductance

4/12

Static Drain-source On Resistance

STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1

Gate Charge vs Gate-so urc e V oltage

Capacitance Variations

Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.

Source-drain Diode Forward Characteristics

5/12

STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load T es t Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Lo ad Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/12

STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052

H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

7/12

STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

8/12

L3

L6

L7

F1

F

G1

H

F2

123

L4

L2

L5

G

STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1

D2PAK MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm. inch

M 2.4 3.2 0.094 0.126
R 0.4 0.015

V2 0º 8º

3

9/12

1

STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

10/12

A

A1

C2

B2

B

e

E

L1

L2

D

L

P011P5/E

STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520

D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937

T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales ty pe

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

11/12

STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1

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