Datasheet ST280SPbF Series DataSheet (Vishay)

Page 1
TO-209AB (TO-93)
PRODUCT SUMMARY
I
T(AV)
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 280 A
FEATURES
• Center amplifying gate
• International standard case TO-209AB (TO-93)
• Hermetic metal case with glass-metal seal insulator
• Compression bonded encapsulation for heavy duty operations such as severe thermal cycling
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• DC motor controls
280 A
• Controlled DC power supplies
• AC controllers
ST280SPbF Series
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
t
I
V
DRM/VRRM
t
T
J
T
C
50 Hz 7850
60 Hz 8220
50 Hz 308
60 Hz 281
Typical 100 µs
280 A
85 °C
440
400/600 V
- 40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
ST280S
V
VOLTAGE
CODE
04 400 500
06 600 700
DRM/VRRM
PEAK AND OFF-STATE VOLTAGE
, MAXIMUM REPETITIVE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK VOLTAGE
V
I
DRM/IRRM
AT T
A
kA2s
MAXIMUM
= TJ MAXIMUM
mA
30
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Page 2
ST280SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 280 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current at case temperature
Maximum RMS on-state current I
I
T(RMS)
Maximum peak, one-cycle non-repetitive surge current
Maximum I
Maximum I
t for fusing I2t
t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3100 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Maximum (typical) latching current I
T(AV)
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
180° conduction, half sine wave 280 A
85 °C
DC at 75 °C case temperature 440
t = 10 ms
t = 8.3 ms 8220
t = 10 ms
t = 8.3 ms 6900
t = 10 ms
t = 8.3 ms 220
t = 10 ms
t = 8.3 ms 200
(16.7 % x π x I (I > π x I (16.7 % x π x I (I > π x I
No voltage reapplied
100 % V reapplied
No voltage
RRM
Sinusoidal half wave, initial T
= TJ maximum
J
reapplied
100 % V
RRM
reapplied
< I < π x I
T(AV)
), TJ = TJ maximum 0.88
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 0.47
T(AV)
), TJ = TJ maximum 0.84
T(AV)
), TJ = TJ maximum 0.50
T(AV)
7850
6600
310
218
Ipk = 880 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.28 V
TJ = 25 °C, anode supply 12 V resistive load
600
1000 (300)
A
kA2s
V
mΩ
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
Gate drive 20 V, 20 Ω, t T
= TJ maximum, anode voltage 80 % V
J
1 µs
r
DRM
Gate current 1 A, dIg/dt = 1 A/µs V
= 0.67 % V
d
, TJ = 25 °C
DRM
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs, V
= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs
R
1000 A/µs
1.0 µs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
dV/dt T
I
RRM,
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
500 V/µs
applied 30 mA
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Document Number: 94402
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Page 3
ST280SPbF Series
Phase Control Thyristors
Vishay High Power Products
(Stud Version), 280 A
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
GM
G(AV)
GM
GM
GM
TJ = TJ maximum, tp 5 ms 10.0
TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
TJ = TJ maximum, tp 5 ms 3.0 A
TJ = TJ maximum, tp 5 ms
TJ = - 40 °C
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
GT
GT
GD
GD
= 25 °C 90 150
J
T
= 125 °C 40 -
J
TJ = - 40 °C 2.9 -
= 25 °C 1.8 3.0
T
J
= 125 °C 1.2 -
T
J
Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied
Maximum gate current/voltage not to trigger is the maximum value
TJ = TJ maximum
which will not trigger any unit with rated V
anode to cathode
DRM
applied
VALUES
TYP. MAX.
20
5.0
180 -
10 mA
0.25 V
UNITS
W
V
mAT
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to case R
Maximum thermal resistance, case to heatsink R
J
Stg
thJC
thCS
DC operation 0.105
Mounting surface, smooth, flat and greased 0.04
Non-lubricated threads
Mounting torque, ± 10 %
Lubricated threads
Approximate weight 280 g
Case style See dimensions - link at the end of datasheet TO-209AB (TO-93)
ΔR
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.016 0.012
120° 0.019 0.020
T
90° 0.025 0.027
= TJ maximum K/W
J
60° 0.036 0.037
30° 0.060 0.060
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
- 40 to 125
- 40 to 150
31
(275)
24.5
(210)
(lbf · in)
°C
K/W
N · m
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Page 4
ST280SPbF Series
Vishay High Power Products
130
120
110
100
90
80
Maximum Allowable Ca se Temperature ( °C)
0 50 100 150 200 250 300
ST2 80 S Se r i e s R (DC) = 0.105 K/W
thJC
Conduction Angle
30°
60°
90°
120°
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
350
180°
300
250
200
120°
90° 60° 30°
RM S Lim it
150
100
50
Phase Control Thyristors
(Stud Version), 280 A
180°
Maximum Allowable Case Temperature (°C)
R
0
t
h
.
1
S
6
A
K
=
/
0
W
.
2
K
/
W
0
.
2
5
K
/
W
0
.
3
K
/
W
0
.
4
K
/
W
0
.
6
K
Conduc tio n Angle
ST280S Se ries T = 125°C
J
/
W
0
.
8
K
/
W
1
.
2
K
/
W
130
120
ST2 80 S Se r ie s R ( DC) = 0.105 K/ W
thJC
110
Conduc tion Period
100
90
30°
80
70
60°
90°
120°
180°
0 50 100 150 200 250 300 350 400 450
Average On-state Current (A)
0
.
1
K
/
W
­D
e
l
t
a
R
DC
0
Maximum Average On-state Power Loss (W)
0
50 100 150 200 250 300
Avera g e On -st ate Curre nt (A)
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
500
450
400
350
300
DC 180° 120°
90° 60° 30°
250
RM S Lim i t
200
Conduction Period
150
100
50
0
Maximum Average On-state Power Loss (W)
0 50 100150200250300350400450
ST280S Series T = 12 5° C
J
Average On-state Current (A)
0
0
0
0
0
.
0
.
4
0
.
1
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
0
.
0
t
6
h
S
K
A
/
.
0
W
8
K
/
W
.
1
2
K
/
W
.
1
6
K
/
W
.
2
K
/
W
3
K
/
W
K
/
W
6
K
/
W
K
/
W
=
0
.
0
3
K
/
W
­D
e
l
t
a
R
Fig. 4 - On-State Power Loss Characteristics
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Page 5
ST280SPbF Series
Phase Control Thyristors
Vishay High Power Products
(Stud Version), 280 A
7000
At Any Ra ted Load Condition And With
Rated V Applied Following Surge.
6500
6000
5500
5000
4500
4000
3500
Pea k Half Sine Wave On-sta te Curren t (A)
3000
Number Of Equal Amp litude Ha lf Cyc le Current Pulses (N)
ST2 80 S Se r ie s
110100
RRM
Initia l T = 125°C
J
@ 6 0 Hz 0. 00 8 3 s @ 5 0 Hz 0. 01 0 0 s
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
10000
T = 25 ° C
J
7000
At Any Rate d Load Condition And Wit h
Rated V Applied Following Surge.
6500
6000
5500
5000
4500
4000
3500
Pe a k Ha lf Sine Wave O n-sta te C urrent ( A)
3000
110100
Numb er Of Eq ua l Amp litud e Half Cyc le Cu rren t Pulses (N)
RRM
ST2 80 S Se r i e s
Initia l T = 125°C
J
@ 60 Hz 0. 0083 s @ 50 Hz 0. 0100 s
1
thJC
0.1
0.01
1000
Instantaneous On-state Current (A)
100
Fig. 7 - On-State Voltage Drop Characteristics
Steady State Value
R = 0.105 K/W
thJC
(DC Operation)
T = 125°C
J
ST280S Se rie s
0.5 1 1.5 2 2.5 3 3.5 4
In st a n t a n e o us O n- sta t e Vo lt a g e (V)
ST2 8 0 S Se r i e s
Tra nsient Therma l Imp edan c e Z (K/W)
0.001
0.001 0.01 0.1 1 10
Sq u a r e W a v e P u l se D u r a t i o n ( s)
Fig. 8 - Thermal Impedance Z
Characteristics
thJC
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Page 6
ST280SPbF Series
Vishay High Power Products
100
Rectangular gate pulse a) Recommended load line for rated di/d t : 20V, 10ohms; tr<=1 µs b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
10
tr<=1 µs
1
Instantaneous Gate Voltage (V)
0.1
0.001 0.01 0.1 1 10 100
ORDERING INFORMATION TABLE
VGD
Phase Control Thyristors
(Stud Version), 280 A
(a)
(b)
Tj = -4 0 ° C
Tj =2 5 ° C
Tj = 12 5 ° C
IG D
D e v i c e : ST2 80 S Se r ie s
Instanta neous Gate Current (A)
Fig. 9 - Gate Characteristics
Fr eq u e n c y Lim i t e d b y PG ( AV )
(1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms
(1) (2) (3)
(4)
Device code
ST 28 0 S 06 P 0 V PbF
324
51
6789
1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4
- S = Compression bonding stud
5
- Voltage code x 100 = V
6
- P = Stud base 3/4"-16UNF-2A threads
7
- 0 = Eyelet terminals (gate and auxiliary cathode leads)
(see Voltage Ratings table)
RRM
1 = Fast-on terminals (gate and auxiliary cathode leads)
8 - V = Glass-metal seal
9
- Lead (Pb)-free
Note: For metric device M16 x 1.5 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95077
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Page 7
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com Revision: 12-Mar-07 1
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DIMENSIONS in millimeters (inches)
Glass metal seal
Outline Dimensions
Vishay High Power Products
TO-209AB (TO-93)
Case Style TO-209AB (TO-93)
19 (0.75) MAX.
210 (8.26) ± 10 (0.39)
82 (3.23) MIN.
MAX.
28.5 (1.12)
8.5 (0.33) DIA.
Red silicon rubber
Red cathode
Red shrink
16 (0.63) MAX.
MAX.
21 (0.83)
35 (1.38)
MAX.
4.3 (0.17) DIA.
White gate
White shrink
28.5 (1.12) MAX. DIA.
3/4"-16UNF-2A
C.S. 0.4 mm
(0.006 s.i.)
SW 32
2
220 (8.66) ± 10 (0.39)
Flexible lead
C.S. 25 mm
(0.039 s.i.)
4 (0.16) MAX.
2
9.5 (0.37) MIN.
22 (0.86) MIN.
Fast-on terminals
AMP. 280000-1
REF-250
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