Datasheet ST280CPbF Series DataSheet (Vishay)

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 500 A

FEATURES

• Center amplifying gate

ST280CPbF Series

• Metal case with ceramic insulator

• International standard case TO-200AB (A-PUK)

• Lead (Pb)-free

TO-200AB (A-PUK)

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

PRODUCT SUMMARY

I

T(AV)

500 A

• DC motor controls

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 7850

60 Hz 8220

50 Hz 308

60 Hz 281

Typical 100 µs

500 A

55 °C

960 A

25 °C

A

kA2s

400 to 600 V

- 40 to 125 °C

RoHS

COMPLIANT

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

ST280C..C

Document Number: 94400 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

VOLTAGE

CODE

04 400 500

06 600 700

DRM/VRRM

PEAK AND OFF-STATE VOLTAGE

, MAXIMUM REPETITIVE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK VOLTAGE

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

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MAXIMUM

mA

30

ST280CPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 500 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3080 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Maximum (typical) latching current I

T(AV)

180° conduction, half sine wave
double side(single side) cooled

DC at 25 °C heatsink temperature double side cooled 960

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 8220

t = 10 ms

t = 8.3 ms 6900

t = 10 ms

t = 8.3 ms 281

t = 10 ms

t = 8.3 ms 200

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 1050 A, TJ = 125 °C, tp = 10 ms sine pulse 1.36 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.88

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.47

T(AV)

), TJ = TJ maximum 0.84

T(AV)

), TJ = TJ maximum 0.50

T(AV)

500 (185) A

55 (85) °C

7850

6600

308

218

600

1000 (300)

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise
of off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 30 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94400

2 Revision: 11-Aug-08

ST280CPbF Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version), 500 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

GM

TJ = TJ maximum, tp ≤ 5 ms

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 90 150

J

T

= 125 °C 40 -

J

TJ = - 40 °C 2.9 -

= 25 °C 1.8 3.0

T

J

T

= 125 °C 1.2 -

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

DRM

anode to

cathode applied

VALUES

TYP. MAX.

5.0

180 -

0.30 V

UNITS

W

20

V

mAT

V

10 mA

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to heatsink

Maximum thermal resistance,
case to heatsink

R

R

T

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.17

DC operation double side cooled 0.08

DC operation single side cooled 0.033

DC operation double side cooled 0.017

Mounting force, ± 10 %

Approximate weight 50 g

Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

TEST CONDITIONS UNITS

180° 0.016 0.016 0.011 0.011

120° 0.019 0.019 0.019 0.019

90° 0.024 0.024 0.026 0.026

60° 0.035 0.035 0.036 0.037

30° 0.060 0.060 0.060 0.061

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

Document Number: 94400 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 3

- 40 to 125

- 40 to 150

4900
(500)

= TJ maximum K/W

T

J

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°C

K/W

N

(kg)

ST280CPbF Series

Vishay High Power Products

130

120

110

100

90

80

70

60

50

40

0 50 100 150 200 250 300 350

Maximum Allowable Heatsink Temperature (°C)

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

0 100 200 300 400 500 600

Maximum Allowable Heatsink Temperature (°C)

Fig. 2 - Current Ratings Characteristics

ST280C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W

thJ-hs

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

ST280C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

DC

Average On-state Current (A)

Phase Control Thyristors

(Hockey PUK Version), 500 A

130

120

110

100

90

80

70

60

50

180°

40

30

20

Maximum Allowable Heatsink Temperature (°C)

1000

900

800

700

600

500

400

300

200

100

0

Maximum Allowable Heatsink Temperature (°C)

Fig. 5 - On-State Power Loss Characteristics

ST280C..C Series
(Double Side Cooled)
R (DC) = 0.08 K/W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

DC

0 200 400 600 800 1000

Average On-state Current (A)

Fig. 4 - Current Ratings Characteristics

180°
120°

90°
60°
30°

ST280C..C Series
T = 125°C

0 100 200 300 400 500 600 700

Average On-state Current (A)

RMS Limit

Conduction Angle

J

130

120

110

100

90

80

70

60

50

40

30

20

0 100 200 300 400 500 600 700

Maximum Allowable Heatsink Temperature (°C)

Fig. 3 - Current Ratings Characteristics

www.vishay.com For technical questions, contact: [e-mail]
4 Revision: 11-Aug-08

ST280C..C Series
(Double Side Cooled)
R (DC) = 0.08 K/W

thJ-hs

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

180°

1300
1200
1100
1000

900
800
700
600
500
400
300
200
100

Maximum Allowable Heatsink Temperature (°C)

DC
180°
120°

90°
60°
30°

RMS Limit

Conduction Period

ST280C..C Series
T = 125°C

J

0

0 200 400 600 800 1000

Average On-state Current (A)

Fig. 6 - On-State Power Loss Characteristics

Document Number: 94400

4

ST280CPbF Series

Phase Control Thyristors

(Hockey PUK Version), 500 A

7000

6500

6000

5500

5000

4500

4000

3500

Peak Half Sine Wave On-state Current (A)

3000

At Any Rated Load Condition And With
Rated V Applied Following Surge.

RRM

Initial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

ST280C..C Series

1 10 100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

10000

T = 25°C

J

Vishay High Power Products

8000

Maximum Non Repetitive Surge Current

7500

7000

6500

6000

5500

5000

4500

4000

3500

3000

Peak Half Sine Wave On-state Current (A)

Fig. 8 - Maximum Non-Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

J

RRM

ST280C..C Series

0.01 0.1 1

Pulse Train Duration (s)

Single and Double Side Cooled

thJ-hs

0.1

0.01

1

Steady State Value

R = 0.17 K/W

thJ-hs

(Single Side Cooled)

R = 0.08 K/W

thJ-hs

(Double Side Cooled)

(DC Operation)

T = 125°C

J

1000

ST280C..C Series

Instantaneous On-state Current (A)

100

0.5 1 1.5 2 2.5 3 3.5

Instantaneous On-state Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

ST280C..C Series

0.001

Transient Thermal Impedance Z (K/W)

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z

Document Number: 94400 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 5

Characteristics

thJ-hs

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ST280CPbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for

rated di/dt : 20V, 10ohms; tr<=1 µs

b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs

10

1

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

VGD

Phase Control Thyristors

(Hockey PUK Version), 500 A

(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms

(a)

(b)

Tj=-40 °C

Tj=25 °C

Tj=125 °C

IGD

Device: ST280C..C Series

Instantaneous Gate Current (A)

Fig. 11 - Gate Charactersitics

Frequency Limited by PG(AV)

(1)

(2) (3)

(4)

Device code

ST 28 0 C 06 C 1 - PbF

324

- Thyristor

1

- Essential part number

2

- 0 = Converter grade

3

- C = Ceramic PUK

4

- Voltage code: code x 100 = V

5

- C = PUK case TO-200AB (A-PUK)

6

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

7

51

6789

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

- Critical dV/dt:

8

None = 500 V/µs (standard selection)

L = 1000 V/µs (special selection)

- Lead (Pb)-free

9

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95074

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 11-Aug-08

Document Number: 94400

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1

DIMENSIONS in millimeters (inches)

TO-200AB (A-PUK)

Case Style TO-200AB (A-PUK)

Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum

19 (0.75)

DIA. MAX.

Outline Dimensions

Vishay High Power Products

0.3 (0.01) MIN.

13.7/14.4

(0.54/0.57)

19 (0.75)

DIA. MAX.

38 (1.50) DIA MAX.

2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep

42 (1.65) MAX.

0.3 (0.01) MIN.

Gate terminal for

1.47 (0.06) DIA.
pin receptacle

6.5 (0.26)

4.75 (0.19)

25° ± 5°

28 (1.10)

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

Document Number: 95074 For technical questions concerning discrete products, contact: [e-mail]
Revision: 01-Aug-07 For technical questions concerning module products, contact: [e-mail]

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1