Page 1
ST280CHPbF Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 500 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AB (A-PUK)
TO-200AB (A-PUK)
• Extended temperature range
• Lead (Pb)-free
PRODUCT SUMMARY
I
T(AV)
500 A
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
hs
T
hs
50 Hz 7200
60 Hz 7500
50 Hz 260
60 Hz 230
Typical 100 µs
500 A
80 °C
1130 A
25 °C
A
kA2s
400 to 600 V
- 40 to 150 °C
RoHS
COMPLIANT
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE NUMBER
ST280CH..C
Document Number: 94401 For technical questions, contact: ind-modules@vishay.com
Revision: 11-Aug-08 1
VOLTAGE
CODE
04 400 500
06 600 700
DRM/VRRM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
, MAXIMUM
V
V
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
RSM
V
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
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MAXIMUM
mA
75
Page 2
ST280CHPbF Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 500 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 2600 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Maximum (typical) latching current I
T(AV)
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 1130
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
t = 10 ms
t = 8.3 ms 7500
t = 10 ms
t = 8.3 ms 6300
t = 10 ms
t = 8.3 ms 235
t = 10 ms
t = 8.3 ms 165
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.35 V
TJ = 25 °C, anode supply 12 V resistive load
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
= TJ maximum
J
reapplied
100 % V
RRM
reapplied
< I < π x I
T(AV)
), TJ = TJ maximum 0.88
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 0.47
T(AV)
), TJ = TJ maximum 0.84
T(AV)
), TJ = TJ maximum 0.50
T(AV)
500 (185) A
80 (110) °C
7200
6000
260
180
600
1000 (300)
A
kA2s
V
mΩ
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 Ω, t
T
= TJ maximum, anode voltage ≤ 80 % V
J
≤ 1 µs
r
DRM
Gate current 1 A, dIg/dt = 1 A/µs
V
0.67 % V
d
, TJ = 25 °C
DRM
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,
V
= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs
R
1000 A/µs
1.0
µs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
,
I
RRM
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
500 V/µs
applied 75 mA
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Document Number: 94401
2 Revision: 11-Aug-08
Page 3
ST280CHPbF Series
Phase Control Thyristors
Vishay High Power Products
(Hockey PUK Version), 500 A
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
GM
G(AV)
GM
TJ = TJ maximum, tp ≤ 5 ms 10.0
TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
TJ = TJ maximum, tp ≤ 5 ms 3.0 A
GM
TJ = TJ maximum, tp ≤ 5 ms
GM
TJ = - 40 °C
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
GT
GT
GD
GD
= 25 °C 90 150
J
T
= 150 °C 30 -
J
TJ = - 40 °C 2.9 -
= 25 °C 1.8 3.0
T
J
T
= 150 °C 1.0 -
J
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
VALUES
TYP. MAX.
20
5.0
180 -
10 mA
0.30 V
UNITS
W
V
mAT
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction and
storage temperature range
Maximum thermal resistance,
junction to heatsink
Maximum thermal resistance,
case to heatsink
Mounting force, ± 10 %
Approximate weight 50 g
Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)
ΔR
CONDUCTION
thJ-hs
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.016 0.017 0.011 0.011
120° 0.019 0.019 0.019 0.019
90° 0.024 0.024 0.026 0.026
60° 0.035 0.035 0.036 0.037
30° 0.060 0.060 0.060 0.061
Note
• The table above shows the increment of thermal resistance R
T
R
J
R
, T
thJ-hs
thC-hs
Stg
DC operation single side cooled 0.17
DC operation double side cooled 0.08
DC operation single side cooled 0.033
DC operation double side cooled 0.017
when devices operate at different conduction angles than DC
thJ-hs
- 40 to 150 °C
4900
(500)
TEST CONDITIONS UNITS
= TJ maximum K/W
T
J
K/W
N
(kg)
Document Number: 94401 For technical questions, contact: ind-modules@vishay.com
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Revision: 11-Aug-08 3
Page 4
ST280CHPbF Series
Vishay High Power Products
150
140
130
120
110
100
90
80
Maximum Allowable
70
60
Heatsink Temperature (°C)
50
40
0
Fig. 1 - Current Ratings Characteristics
150
140
130
120
110
100
90
80
70
60
Maximum Allowable
50
40
Heatsink Temperature (°C)
30
20
0
Fig. 2 - Current Ratings Characteristics
ST280CH..C Series
(Single side cooled)
R
(DC) = 0.17 K/W
thJ-hs
30°
60°
100 200 300 400
Conduction angle
90°
120°
Average On-State Current (A)
ST280CH..C Series
(Single side cooled)
(DC) = 0.17 K/W
R
thJ-hs
Conduction period
30°
60°
90°
120°
180°
100 200 300 400 500 600
Average On-State Current (A)
Phase Control Thyristors
(Hockey PUK Version), 500 A
150
140
130
120
110
Ø
180°
500
Ø
DC
700
100
90
80
70
60
Maximum Allowable
Maximum Average
50
40
Heatsink Temperature (°C)
30
20
1300
1200
1100
1000
900
800
700
600
500
400
300
On-State Power Loss (W)
200
100
ST280CH..C Series
(Double side cooled)
(DC) = 0.08 K/W
R
thJ-hs
Ø
Conduction period
30°
60°
90°
120°
180°
DC
200 400 600 1000
8000
Average On-State Current (A)
Fig. 4 - Current Ratings Characteristics
180°
120°
90°
60°
30°
0
100 200 300 600
ST280CH..C Series
= 150 °C
T
J
4000
RMS limit
Ø
Conduction angle
500
700
Average On-State Current (A)
Fig. 5 - On-State Power Loss Characteristics
1200
800
150
140
130
120
110
100
90
80
70
60
Maximum Allowable
50
40
Heatsink Temperature (°C)
30
20
30°
100 300 500200 400 600 700
0
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
ST280CH..C Series
(Double side cooled)
R
(DC) = 0.08 K/W
thJ-hs
Conduction angle
60°
90°
120°
Ø
180°
800
1800
1600
1400
1200
1000
800
600
Maximum Average
400
On-State Power Loss (W)
200
0
DC
180°
120°
90°
60°
30°
200 400 600 800
0
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
RMS limit
Ø
Conduction period
ST280CH..C Series
T
= 150 °C
J
12001000
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Document Number: 94401
4 Revision: 11-Aug-08
Page 5
ST280CHPbF Series
6500
At any rated load condition and with
6000
5500
5000
4500
4000
On-State Current (A)
Peak Half Sine Wave
3500
3000
rated V
ST280CH..C Series
1
Number Of Equal Amplitude Half Cycle
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
applied following surge.
RRM
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
10
Current Pulses (N)
Phase Control Thyristors
(Hockey PUK Version), 500 A
Initial T
= 150 °C
J
Peak Half Sine Wave
100
10 000
TJ = 150 °C
Vishay High Power Products
7500
Maximum non-repetitive surge current
7000
6500
6000
5500
5000
4500
4000
On-State Current (A)
3500
3000
2500
versus pulse train duration. Control
of conduction may not be maintained.
ST280CH..C Series
0.01
Initial TJ = 150 °C
No voltage reapplied
Rated V
0.1
reapplied
RRM
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
1
1
Steady state value
= 0.17 K/W
R
thJ-hs
(Single side cooled)
= 0.08 K/W
R
0.1
thJ-hs
(Double side cooled)
(DC operation)
- Transient
0.01
thJ-hs
Z
Thermal Impedance (K/W)
1000
ST280CH..C Series
Instantaneous On-State Current (A)
100
1.0 2.01.5 2.5 3.0 3.5
0.5
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
TJ = 25 °C
4.0
ST280CH..C Series
0.001
0.001 0.01 0.1 1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
Characteristics
thJ-hs
Document Number: 94401 For technical questions, contact: ind-modules@vishay.com
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Revision: 11-Aug-08 5
Page 6
ST280CHPbF Series
Vishay High Power Products
100
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
10
tr ≤ 1 µs
1
V
GD
Instantaneous Gate Voltage (V)
0.1
0.001 0.01 0.1 1
ORDERING INFORMATION TABLE
Device code
ST 28 0 CH 06 C 1 - PbF
I
GD
Phase Control Thyristors
(Hockey PUK Version), 500 A
(a)
(b)
T
J
T
= 40 °C
J
T
J
= 150 °C
Device: ST280CH..C Series
Instantaneous Gate Current (A)
= 25 °C
Frequency limited by P
Fig. 11 - Gate Characteristics
(1) PGM = 10 W, tp = 4 ms
(2) P
= 20 W, tp = 2 ms
GM
(3) P
= 40 W, tp = 1 ms
GM
(4) P
= 60 W, tp = 0.66 ms
GM
(1) (2)
G(AV)
10 100
(3)
(4)
324
51
6789
1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4
- CH = Ceramic PUK, high temperature
5
- Voltage code x 100 = V
(see Voltage Ratings table)
RRM
6 - C = PUK case TO-200AB (A-PUK)
7 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
8 - Critical dV/dt:
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
9 - Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95074
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Document Number: 94401
6 Revision: 11-Aug-08
Page 7
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
Page 8
DIMENSIONS in millimeters (inches)
TO-200AB (A-PUK)
Case Style TO-200AB (A-PUK)
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
19 (0.75)
DIA. MAX.
Outline Dimensions
Vishay High Power Products
0.3 (0.01) MIN.
13.7/14.4
(0.54/0.57)
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
42 (1.65) MAX.
0.3 (0.01) MIN.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
6.5 (0.26)
4.75 (0.19)
25° ± 5°
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95074 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
Revision: 01-Aug-07 For technical questions concerning module products, contact: ind-modules@vishay.com
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