Datasheet ST280CH06C3L, ST280CH06C3, ST280CH06C2L, ST280CH06C2, ST280CH06C1L Datasheet (International Rectifier)

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D-302
DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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500A
PHASE CONTROL THYRISTORS Hockey Puk Version
D-303
ST280CH..C SERIES
Bulletin I25160/B
DC motor controls Controlled DC power supplies AC controllers
I
T(AV)
500 A
@ T
hs
80 °C
I
T(RMS)
1130 A
@ T
hs
25 °C
I
TSM
@ 50Hz 7200 A @ 60Hz 7500 A
I
2
t @ 50Hz 260 KA2s
@ 60Hz 230 KA
2
s
V
DRM/VRRM
400 to 600 V
t
q
typical 100 µs
T
J
- 40 to 150 °C
Parameters ST280CH..C Units
Major Ratings and Characteristics
Features
Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (A-PUK) Extended temperature range
case style TO-200AB (A-PUK)
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ST280CH..C Series
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Voltage V
DRM/VRRM
, max. repetitive V
RSM
, maximum non- I
DRM/IRRM
max.
Type number Code peak and off-state voltage repetitive peak voltage
@ TJ = TJ max
V V mA
04 400 500 06 600 700
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
T(AV)
Max. average on-state current 500 (185) A 180° conduction, half sine wave @ Heatsink temperature 80 (110) °C double side (single side) cooled
I
T(RMS)
Max. RMS on-state current 1130 DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle 7200 t = 10ms No voltage non-repetitive surge current 7500 A t = 8.3ms reapplied
6000 t = 10ms 100% V
RRM
6300 t = 8.3ms reapplied Sinusoidal half wave,
I
2
t Maximum I2t for fusing 260 t = 10ms No voltage Initial TJ = TJ max.
235 t = 8.3ms reapplied 180 t = 10ms 100% V
RRM
165 t = 8.3ms reapplied
I
2
t Maximum I2√t for fusing 2600 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)
1
Low level value of threshold voltage
V
T(TO)
2
High level value of threshold voltage
r
t1
Low level value of on-state slope resistance
r
t2
High level value of on-state slope resistance
V
TM
Max. on-state voltage 1.35 V Ipk= 1000A, TJ = TJ max, tp = 10ms sine pulse
I
H
Maximum holding current 600
I
L
Max (typical) latching current 1000 (300)
0.84 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
0.50 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
0.47 (I > π x I
T(AV)
),TJ = TJ max.
Parameter ST280CH..C Units Conditions
0.88 (I > π x I
T(AV)
),TJ = TJ max.
On-state Conduction
KA2s
V
m
mA TJ = 25°C, anode supply 12V resistive load
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20, t
r
1µs
of turned-on current T
J
= TJ max, anode voltage 80% V
DRM
Gate current 1A, dig/dt = 1A/µs V
d
= 0.67% V
DRM, TJ
= 25°C
I
TM
= 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V
dv/dt
= 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST280CH..C Units Conditions
Switching
1000 A/µs
t
d
Typical delay time 1.0
t
q
Typical turn-off time 100
µs
ST280CH..C 75
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ST280CH..C Series
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Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 5- On-state Power Loss Characteristics
Fig. 6- On-state Power Loss Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
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ST280CH..C Series
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Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Gate Characteristics
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ST280CH..C Series
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PGMMaximum peak gate power 10.0 TJ = TJ max, tp ≤ 5ms P
G(AV)
Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms
+V
GM
Maximum peak positive gate voltage
-V
GM
Maximum peak negative gate voltage
T
J
= - 40°C
mA T
J
= 25°C
T
J
= 150°C
T
J
= - 40°C
V T
J
= 25°C
T
J
= 150°C
I
GD
DC gate current not to trigger 10 mA
Parameter ST280CH..C Units Conditions
20
5.0
Triggering
TYP. MAX.
180 -
90 150 30 -
2.9 -
1.8 3.0
1.0 -
VGDDC gate voltage not to trigger 0.30 V
Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated V
DRM
anode-to-cathode applied
T
J
= TJ max
Max. required gate trigger/ cur­rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied
V
GT
DC gate voltage required to trigger
I
GT
DC gate current required to trigger
W
V T
J
= TJ max, tp 5ms
T
J
Max. operating temperature range -40 to 150
T
stg
Max. storage temperature range -40 to 150
R
thJ-hs
Max. thermal resistance, 0.17 DC operation single side cooled junction to heatsink 0.08 DC operation double side cooled
R
thC-hs
Max. thermal resistance, 0.033 DC operation single side cooled case to heatsink 0.017 DC operation double side cooled
F Mounting force, ± 10% 4900 N
(500) (Kg)
wt Approximate weight 50 g
Parameter ST280CH..C Units Conditions
K/W
Thermal and Mechanical Specification
°C
Case style TO - 200AB (A-PUK) See Outline Table
K/W
dv/dt Maximum critical rate of rise of
off-state voltage
I
DRM
Max. peak reverse and off-state
I
RRM
leakage current
Blocking
500 V/µs TJ = TJ max. linear to 80% rated V
DRM
Parameter ST280CH..C Units Conditions
75 mA TJ = TJ max, rated V
DRM/VRRM
applied
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ST280CH..C Series
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R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Single Side Double Side Single Side Double Side
180° 0.016 0.017 0.011 0.011 T
J
= TJ max.
120° 0.019 0.019 0.019 0.019
90° 0.024 0.024 0.026 0.026 K/W 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - CH = Ceramic Puk, High temperature 5 - Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6 - C = Puk Case TO-200AB (A-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8 - Critical dv/dt: None = 500V/µsec (Standard selection)
L = 1000V/µsec (Special selection)
Ordering Information Table
Device Code
51 2
3
4
ST 28 0 CH 06 C 1
768
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ST280CH..C Series
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Outline Table
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
DIA. MAX.
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
25°± 5°
GATE TERM. FOR
1.47 (0.06) DIA. PIN RECEPTACLE
ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
42 (1.65) MAX.
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