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HIGH VOLTAGE FAST-SWITCHING
■ NEWSERIES, ENHANCHED
PERFORMANCE
■ FULLYINSULATEDPACKAGEFOREASY
MOUNTING
■ HIGH VOLTAGECAPABILITY
■ HIGH SWITCHING SPEED
■ TIGTHERhfe CONTROL
■ IMPROVEDRUGGEDNESS
APPLICATIONS:
■ HORIZONTAL DEFLECTIONFOR MONITOR
15” AND HIGH ENDTV
DESCRIPTION
The device is manufactured using Diffused
Collector technologyfor more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
ST2310HI
NPN POWER TRANSISTOR
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
February 2000
Collect or-Emit ter V oltage (VBE= 0) 1500 V
CES
Collect or-Emit ter V oltage (IB= 0) 600 V
CEO
Emitter-Base Vol tage (IC=0) 6 V
EBO
I
Collect or Current 10 A
C
Collect or Peak Cu rr ent (tp<5ms) 20 A
CM
Base Current 7 A
I
B
Tot al Dissipation at Tc=25oC55W
tot
Storage Temperature -65 to 150
stg
T
Max. Ope r ating Junct ion T emperature 150
j
o
C
o
C
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ST2310HI
THERMAL DATA
R
thj-case
Ther mal Resist ance Junction-c a se Ma x 2.3
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
I
CES
I
EBO
V
CEO(sus)
Collec t or Cut -off
Current (V
BE
=0)
Emitt er Cut -of f Curren t
=0)
(I
C
∗ Collector- Emitt er
V
= 1500 V 1 mA
CE
V
=7V 1 mA
EB
I
= 100 m A L = 25 mH 600 V
C
Sust aining V o lt age
=0)
(I
B
V
∗ Co llector-E mitter
CE(sat)
IC=7A IB=1.75A 3 V
Saturation Voltage
∗ Base-Emi tter
V
BE(sat)
IC=7A IB=1.75A 1.1 V
Saturation Voltage
∗ DC C ur rent Gain IC=1A VCE=5V
h
FE
INDUCTIV E LO AD
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
s
t
f
Storage Ti me
Fall Time
=7A VCE=5V 6.5
I
C
IC=6A fh=64KHz
=1.2A V
I
B(on)
=0.4µH
L
B
BB(of f)
=-2.5V
25
2.3
380
9.5
2.7
450
µs
ns
Safe Operating Area ThermalImpedance
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ST2310HI
Derating Curve
CollectorEmitterSaturationVoltage
DC Current Gain
BaseEmitter Saturation Voltage
PowerLosses
SwitchingTime InductiveLoad
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ST2310HI
ReverseBiased SOA
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ISOWATT218 NARROW LEADS MECHANICAL DATA
ST2310HI
DIM.
A 5.35 5.65 0.211 0.222
C 3.30 3.80 0.130 0.150
D 2.90 3.10 0.114 0.122
D1 1.88 2.08 0.074 0.082
E 0.75 0.95 0.030 0.037
F 0.75 0.95 0.030 0.037
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083
F5 1.10 0.043
G 10.80 11.20 0.425 0.441
H 15.80 16.20 0.622 0.638
L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817
N 2.1 2.3 0.083 0.091
R 4.6 0.181
DIA 3.5 3.7 0.138 0.146
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
- Weight: 4.9 g (typ.)
- MaximumTorque (applied to mounting flange) Recommended: 0.8 Nm; Maximum:1 Nm
- Theside of the dissipator must beflatwithin 80 µm
P025C/B
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ST2310HI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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