Datasheet ST230SPbF Series DataSheet (Vishay)

TO-209AB (TO-93)

PRODUCT SUMMARY

I

T(AV)

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 230 A

FEATURES

• Center amplifying gate

• International standard case TO-209AB (TO-93)

• Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to 1200 V)

• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

230 A

• Controlled DC power supplies

• AC controllers

ST230SPbF Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 5700

60 Hz 5970

50 Hz 163

60 Hz 149

Typical 100 µs

230 A

85 °C

360 A

400 to 1600 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

ST230S

V

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

16 1600 1700

DRM/VRRM

PEAK AND OFF-STATE VOLTAGE

, MAXIMUM REPETITIVE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK VOLTAGE

V

I

DRM/IRRM

AT T

A

kA2s

MAXIMUM

= TJ MAXIMUM

J

mA

30

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Revision: 11-Aug-08 1

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ST230SPbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 230 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1630 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Maximum (typical) latching current I

T(AV)

180° conduction, half sine wave

DC at 78 °C case temperature 360

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 5970

t = 10 ms

t = 8.3 ms 5000

t = 10 ms

t = 8.3 ms 148

t = 10 ms

t = 8.3 ms 105

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 720 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.55 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.98

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.81

T(AV)

), TJ = TJ maximum 0.92

T(AV)

), TJ = TJ maximum 0.88

T(AV)

230 A

85 °C

5700

4800

163

115

600

1000 (300)

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise
of off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 30 mA

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Document Number: 94399

2 Revision: 11-Aug-08

ST230SPbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 230 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

GM

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

TJ = TJ maximum, tp ≤ 5 ms

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GD

GT

GD

T

= 25 °C 90 150 mA

J

T

= 125 °C 40 -

J

TJ = - 40 °C 2.9 -

= 25 °C 1.8 3.0

T

J

T

= 125 °C 1.2 -

J

TJ = TJ maximum

Maximum required gate
trigger/current/voltage are
the lowest value which will
trigger all units 12 V anode
to cathode applied

Maximum gate current/
voltage not to trigger is the
maximum value which will
not trigger any unit with rated
V

anode to cathode applied

DRM

VALUES

TYP. MAX.

20

5.0

180 -

10 mA

0.25 V

UNITS

W

V

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

R

T

R

thJC

thC-hs

J

Stg

DC operation 0.10

Mounting surface, smooth, flat and greased 0.04

Non-lubricated threads

Mounting torque, ± 10 %

Lubricated threads

Approximate weight 280 g

Case style See dimensions - link at the end of datasheet TO-209AB (TO-93)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.016 0.012

120° 0.019 0.020

90° 0.025 0.027

T

60° 0.036 0.037

30° 0.060 0.060

Note

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Revision: 11-Aug-08 3

- 40 to 125

- 40 to 150

K/W

31

(275)

24.5

N · m

(lbf ⋅ in)

(210)

= TJ maximum K/W

J

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°C

ST230SPbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 230 A

• The table above shows the increment of thermal resistance R

130

120

110

100

90

80

Maximum Allowable Case Temperature (°C)

050100150200250

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

ST2 30 S Se r i e s
R (DC) = 0.1 K/ W

thJC

Cond uction Ang le

90°

30°

60°

120°

Averag e On-state Current (A)

350

300

250

200

180°
120°

90°
60°
30°

RM S Li m i t

150

100

50

180°

Conduc tion Angle

ST2 30 S Se r ie s
T = 12 5 ° C

J

when devices operate at different conduction angles than DC

thJC

130

120

ST2 30 S Se ri e s
R (DC) = 0.1 K/ W

thJC

110

Conduc tion Period

100

90

30°

80

70

Maximum Allowa ble Case Tem perature (°C)

0 100 200 300 400

60°

90°

120°

180°

Average On-state Current (A)

R

t

h

S

0

0

.

1

6

0

.

2

K

/

W

0

.

3

K

/

W

0

.

4

K

/

W

0

.

5

K

/

W

0

.

8

K

/

W

1

.

2

K

/

W

A

.

1

=

K

0

/

K

/

W

.

W

0

8

K

/

W

­D

e

l

t

a

R

DC

0

Maximum Average On-state Power Loss (W)

50

0

100 150 200 250

Average On-state Current (A)

25 50 75 100 125

Maximum Allowab le Ambient Tempe rat ure (°C)

Fig. 3 - On-State Power Loss Characteristics

450

400

350

300

250

200

150

100

50

Maximum Average On-st ate Power Loss (W)

DC
180°
120°

90°
60°
30°

RM S Li m it

Conduction Period

ST2 30 S Se ri e s
T = 125°C

J

0

0 50 100150200250300350400

Average On-state Current (A)

R

t

h

S

A

0

=

.

1

0

K

.

08

/

W

0

.

1

0

.

2

0

.

3

0

.

4

0

.

5

0

.

8

1

.

2

K/

6

K

/

K

/

K

/

K

K

K

W

K

/

W

W

W

W

/

W

/

W

/

W

-

D

e

l

t

a

R

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

Fig. 4 - On-State Power Loss Characteristics

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Document Number: 94399

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ST230SPbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 230 A

5500

At Any Rated Lo ad Co nd ition And With

Rated V Applied Following Surge.

5000

4500

4000

3500

3000

2500

Peak Half Sine Wave On-stat e Current (A)

2000

110100

Number Of Eq ual Amplitude Half Cycle Current Pulses (N)

RRM

ST2 30 S Se r i e s

Init ial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

10000

6000

Maximum Non Repetitive Surge Current

Versus Pulse Train Durat ion. Control

Of Cond uct ion May Not Be Ma intained.

ST2 30 S Se ri e s

0.01 0. 1 1

Pul se Tra in Du ra ti o n ( s)

Init ia l T = 125°C

No V olt ag e Re a p p lie d
Rate d V Rea pp lied

RRM

Peak Half Sine Wave On-state Current (A)

5500

5000

4500

4000

3500

3000

2500

2000

J

1

thJC

0.1

0.01

1000

100

Instantaneous On-state Current (A)

10

Fig. 7 - On-State Voltage Drop Characteristics

St e a d y St a t e V a l u e

R = 0.1 K/W

thJC

(DC Operation)

Tj = 25˚C

Tj = 125˚C

ST230S Series

0.5 1.5 2.5 3.5 4.5

Instantaneous On-state Voltage (V)

ST230S Series

Tr a n si e n t Th e rm a l Im p e d a n c e Z ( K/ W )

0.001

0.001 0.01 0.1 1 10

Sq u a r e Wa v e Pu l se D u r a t i o n ( s)

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

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ST230SPbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs

b) Recommended load line for

<=30% rated di/dt : 10V, 10ohms

10

tr<=1 µs

1

In st a nt a n e o us G at e Vo lt a g e (V )

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

Device code

ST 23 0 S 16 P 0 V PbF

VGD

Phase Control Thyristors

(Stud Version), 230 A

(a)

(b)

Tj = - 40 ° C

Tj = 25 ° C

Tj =1 2 5 ° C

IGD

Devic e: ST230S Serie s

Instantaneous Gate Current (A)

Fig. 9 - Gate Characteristics

Frequency Limited by PG(AV)

(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, t p = 0.66ms

(1) (2)

(3)

(4)

324

1

- Thyristor

2

- Essential part number

3

- 0 = Converter grade

4

- S = Compression bonding stud

5

- Voltage code x 100 = V

6

- P = Stud base 3/4"-16UNF2A threads

7

- 0 = Eyelet terminals (gate and auxiliary cathode leads)

51

6789

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode leads)

8

-

V = Glass-metal seal (only up to 1200 V)

None = Ceramic housing (over 1200 V)

- Lead (Pb)-free

9

Note: For metric device M16 x 1.5 contact factory

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95077

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Document Number: 94399

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

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DIMENSIONS in millimeters (inches)

Glass metal seal

Outline Dimensions

Vishay High Power Products

TO-209AB (TO-93)

Case Style TO-209AB (TO-93)

19 (0.75) MAX.

210 (8.26) ± 10 (0.39)

82 (3.23) MIN.

MAX.

28.5 (1.12)

8.5 (0.33) DIA.

Red silicon rubber

Red cathode

Red shrink

16 (0.63) MAX.

MAX.

21 (0.83)

35 (1.38)

MAX.

4.3 (0.17) DIA.

White gate

White shrink

28.5 (1.12)
MAX. DIA.

3/4"-16UNF-2A

C.S. 0.4 mm

(0.006 s.i.)

SW 32

2

220 (8.66) ± 10 (0.39)

Flexible lead

C.S. 25 mm

(0.039 s.i.)

4 (0.16) MAX.

2

9.5 (0.37) MIN.

22 (0.86) MIN.

Fast-on terminals

AMP. 280000-1

REF-250

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Revision: 01-Aug-07 For technical questions concerning module products, contact: [e-mail]

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1