Datasheet ST223C04CFL1 Specification

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A-PUK (TO-200AB)

Inverter Grade Thyristors

(Hockey PUK Version), 390 A

PRIMARY CHARACTERISTICS

Package A-PUK (TO-200AB)

Circuit configuration Single SCR

I

T(AV)

V

DRM/VRRM

V

TM

I

at 50 Hz 5260 A

TSM

I

at 60 Hz 5510 A

TSM

I

GT

T

C/Ths

400 V, 800 V

390 A

1.58 V

200 mA

55 °C

VS-ST223C..C Series

Vishay Semiconductors

FEATURES

• Metal case with ceramic insulator

• All diffused design

• Center amplifying gate

• Guaranteed high dV/dt

• International standard case A-PUK (TO-200AB)

• Guaranteed high dI/dt

• High surge current capability

• Low thermal impedance

• High speed performance

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

•Inverters

• Choppers

• Induction heating

• All types of force-commutated converters




MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

Range 10 to 30 μs

q

T

J

T

hs

T

hs

50 Hz 5850

60 Hz 6130

50 Hz 171

60 Hz 156

390 A

55 °C

745 A

25 °C

400 to 800 V

-40 to +125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VS-ST223C..C

V

VOLTAGE

CODE

04 400 500

08 800 900

DRM/VRRM

REPETITIVE PEAK VOLTAGE

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

V

V

RSM

, MAXIMUM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

A

kA2s

MAXIMUM

mA

40

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VS-ST223C..C Series

180° el

I

TM

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CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

50 Hz 930 800 1430 1220 5870 5240

400 Hz 910 770 1490 1300 3120 2740

1000 Hz 780 650 1430 1260 1880 1640

2500 Hz 490 400 1070 920 1000 860

Recovery voltage V

r

Voltage before turn-on V

d

50 50 50

V

DRM

V

DRM

Rise of on-state current dI/dt 50 - - A/μs

Heatsink temperature 405540554055°C
Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 μF

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

T(RMS)

Maximum peak, one half cycle, 
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1710 kA2s

Maximum peak on-state voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope
resistance

Maximum holding current I

Typical latching current I

I

T(AV)

I

TSM

TM

T(TO)1

T(TO)2

t1

r

t2

H

L

180° conduction, half sine wave
Double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 745

t = 10 ms

t = 8.3 ms 6130

t = 10 ms

t = 8.3 ms 5150

t = 10 ms

t = 8.3 ms 156

t = 10 ms

t = 8.3 ms 110

No voltage 
reapplied

100 % V
reapplied

RRM 

No voltage 
reapplied

100 % V
reapplied

RRM

ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.58
(16.7 % x  x I
(I >  x I

T(AV)

(16.7 % x  x I

(I >  x I

T(AV)

< I <  x I

T(AV)

T(AV)

), TJ = TJ maximum 1.09

< I <  x I

T(AV)

T(AV)

), TJ = TJ maximum 0.82

TJ = 25 °C, IT > 30 A 600

TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000

Vishay Semiconductors

I

TM

100 µs

V

DRM

390 (150) A

55 (85) °C

5850

4920

Sinusoidal half wave,
initial T

= TJ maximum

J

), TJ = TJ maximum 1.05

), TJ = TJ maximum 0.88

171

121

kA

m

mA

A

V

A

2

s

VLow level value of threshold voltage V

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS

Maximum non-repetitive rate 
of rise of turned on current

Typical delay time t

dI/dt T

d

= TJ maximum, V

J

TJ = 25 °C, VDM = Rated V
Resistive load, gate pulse: 10 V, 5  source

= Rated V

DRM

, ITM = 2 x dI/dt 1000 A/μs

DRM

, ITM = 50 A DC, tp = 1 μs

DRM

TJ = TJ maximum, 
I

Maximum turn-off time t

q

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= 300 A, commutating dI/dt = 20 A/μs

TM

V

= 50 V, tp = 500 μs, dV/dt: See table in device code

R

2

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VALUES

MIN. MAX.

0.78

10 30

Document Number: 93672

UNITS

μs

VS-ST223C..C Series

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BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

T

= TJ maximum, linear to 80 % V

Maximum critical rate of rise of off-state voltage dV/dt

Maximum peak reverse and off-state leakage
current

I

RRM

I

DRM

,

J

higher value available on request

TJ = TJ maximum, rated V

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage +V

Maximum peak negative gate voltage -V

Maximum DC gate current required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GM

GT

GT

GD

GD

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp  5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 

TJ = TJ maximum, rated V

Vishay Semiconductors

,

DRM/VRRM

applied

DRM

DRM

applied 40 mA

500 V/μs

60

10

10 A

20

5

200 mA

3V

20 mA

0.25 V

W

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.17

DC operation double side cooled 0.08

DC operation single side cooled 0.033

DC operation double side cooled 0.017

Mounting force, ± 10 %

Approximate weight 50 g

Case style See dimensions - link at the end of datasheet A-PUK (TO-200AB)

R

CONDUCTION

thJ-hs

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

TEST CONDITIONS UNITS

180° 0.015 0.017 0.011 0.011

120° 0.019 0.019 0.019 0.019

90° 0.024 0.024 0.026 0.026

T

60° 0.035 0.035 0.036 0.037

30° 0.060 0.060 0.060 0.061

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJ-hs

-40 to +125

-40 to +150

4900
(500)

= TJ maximum K/W

J

°C

K/W

N

(kg)

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30

40

50

60

70

80

90

100

110

120

130

0 50 100 150 200 250 300

30°

60°

90°

120°

180°

Averag e O n-state C urrent (A)

Conduction Angle

Maximum Allowable Heatsink Temperature (°C)

ST223C ..C S eries
(Single Side Cooled)
R (D C) = 0.17 K/W

thJ- hs

20

30

40

50

60

70

80

90

100

110

120

130

0 100 200 300 400 500

30°

60°

90°

120°

180°

Averag e O n-state C urrent (A)

Conduction Angle

M aximum Allowable Heatsin k Tem perature (°C)

ST223C ..C Series
(D ouble S ide C o oled)
R ( D C ) = 0 .0 8 K / W

th J-hs

0

200

400

600

800

1000

1200

1400

0 100 200 300 400 500 600 700 800

DC
180°
120°

90°

60°

30°

RMS Limit

Conduction Period

Maximum Average On-sta te Power Loss (W)

Average On-state Current (A)

ST223C ..C Se ries
T = 125°C

J

VS-ST223C..C Series

Vishay Semiconductors

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

0 50 100 150 200 250 300 350 400 450

M axim um Allowable Heatsink Tem perature (°C)

Average O n -state C urren t (A)

ST2 23 C..C S erie s
(Single S ide C ooled)
R (D C ) = 0 .17 K/ W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

Fig. 2 - Current Ratings Characteristics

DC

130

120

110

100

90

80

70

60

50

40

30

20

0 100 200 300 400 500 600 700 800

Maxim um Allowable Heatsink Temperature (°C)

A ve ra g e O n -st a te C u rre nt (A )

ST223C ..C S e ries
(D o uble Side C ooled )
R (D C ) = 0.08 K/W

thJ- hs

30°

60°

90°

Conduction Period

120°

180°

DC

Fig. 4 - Current Ratings Characteristics

100 0

180°

800

120°

90°
60°

600

400

200

Maximum Average On-state Power Loss (W)

30°

0

0 100 200 300 400 500

Average On-state Current (A)

RMS Lim it

Conduction Angle

ST223C..C Series
T = 125°C

J

Fig. 5 - On-State Power Loss Characteristics

Fig. 3 - Current Ratings Characteristics

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Fig. 6 - On-State Power Loss Characteristics

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250 0

300 0

350 0

400 0

450 0

500 0

550 0

001011

Number O f Equal Amplitude Half Cycle Current Pulses (N)

Peak Half Sine Wave On-state Current (A)

Initial T = 125°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

J

At Any Rated Load Condition And With

Rated V Applie d Following Surge.

RRM

ST223 C..C Ser ies

2000

2500

3000

3500

4000

4500

5000

5500

6000

0.01 0.1 1

Pulse Train Duration (s)

M a x im u m N on Re p et itive Surg e C u rre nt

V ersu s P u lse T ra in D uratio n . Co n t ro l

Of Conduction M ay Not Be Main tained.

Peak Half Sine W ave On -state Current (A)

In it i a l T = 1 2 5 ° C

No V oltage Reapplied
Rated V Reapplied

RRM

J

ST223C ..C Series

100

1000

10000

0246810

T = 25°C

J

In st a n ta n eo u s O n - s ta t e C u r r e nt ( A )

Instantaneous On-state Voltage (V)

T = 125°C

J

ST223C..C Series

0

50

100

150

200

250

020406080100

I = 50 0 A

300 A

200 A

100 A

50 A

Rate Of Fall Of O n-state Current - di/dt (A/µs)

Maxim um Reverse Recovery Charge - Q rr (µC)

ST223C..C Series
T = 125 °C

J

TM

0

20

40

60

80

100

120

140

160

0 20406080100

M a xim um R eve rse Re c o ve ry C urren t - Irr (A)

Ra te O f Fa ll O f Forw a rd C urre nt - d i/d t (A / µ s)

I = 50 0 A

300 A

200 A

100 A

50 A

TM

ST2 23C ..C S e rie s
T = 125 °C

J

VS-ST223C..C Series

Vishay Semiconductors

1

ST223C ..C S eries

thJ-h s

0.1

Steady State Value

R = 0 .1 7 K / W

0.01

0.00 1

Tr a n s ie n t Th e rm al Im p e d a n c e Z (K/W )

0.00 1 0.01 0 .1 1 10

Sq ua re W a ve Pu lse D u rat ion ( s)

thJ-h s

(Single Side Coo le d)

R = 0 .0 8 K / W

thJ-h s

(Double Side C ooled)

(D C O p e ra tion )

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 10 - Thermal Impedance Z

Characteristics

thJ-hs

Fig. 11 - Reverse Recovered Charge Characteristics

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Fig. 9 - On-State Voltage Drop Characteristics

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Fig. 12 - Reverse Recovered Current Characteristics

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1E2

1E3

1E4

1E1 1E2 1E3 1E4

50 Hz

400

2500

100

Pulse Basewidth (µs)

Peak On-state Current (A)

1000

1500

3000

200

500

5000

ST223C..C Series
Sinusoidal pulse
T = 40°C

C

Snubb er circuit
R = 4 7 ohm s
C = 0.22 µF
V = 80% V

s

s

D

DRM

tp

10000

1E1

1E2

1E3

1E4

1E1 1E2 1E3 1E4

50 Hz

400

2500

100

1000

150 0

3000

200

500

Pu lse Base w idth (µ s)

Peak On-state Current (A)

ST22 3C ..C Ser ies
Trapezoidal pulse
T = 40°C
di/dt = 50A/µs

C

Snu bb er c irc u it
R = 47 ohm s
C = 0.22 µF
V = 80% V

s
s

D

DRM

5000

tp

100 00

1E11E21E31E4

1E1

Fig. 13 - Frequency Characteristics

Snubber circuit
R = 47 ohm s
C = 0.22 µF
V = 80% V

s

s

D

1000 0

10000

VS-ST223C..C Series

Vishay Semiconductors

Snubber circ uit
R = 47 ohm s

s

C = 0.22 µF

s

V = 80% V

D

DRM

50 Hz

100

200

400

500

1000

1500

2500

3000

5000

Pulse Basewidth (µs)

DRM

2500

3000

5000

1500

1000

tp

400

500

ST2 2 3 C ..C Ser ies
Trapezoidal pulse
T = 55°C

tp

di/dt = 50A/µs

ST223C..C Series
Sinusoidal pulse
T = 55°C

C

50 Hz

100

200

C

1E4

Snubb er circuit
R = 47 ohm s

s

C = 0.22 µF

s

V = 80% V

D

1E3

1E2

Pea k O n-sta t e C u rre nt (A )

1E1

1E1 1E2 1E3 1E4

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10000

DRM

1000

1500

250 0

3000

5000

Pu lse Base w idth (µs)

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500

tp

100

200

400

ST223C..C Series
Tra pezoidal pulse
T = 40°C

C

di/dt = 100A/µs

1E1 1E2 1E3 1E4

Fig. 14 - Frequency Characteristics

Snubber circuit
R = 47 ohm s

s

C = 0.22 µF

s

V = 80% V

50 Hz

D

1E1 1E2 1E3 1E4

Fig. 15 - Frequency Characteristics

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1000 0

5000

Pulse Basewidth (µs)

DRM

2500

3000

Pulse Basewidth (µs)

1500

200

400

500

1000

ST223C..C Se ries
Trapezoid al p ulse
T = 55°C

C

tp

di /dt = 10 0A /µs

Document Number: 93672

100

50 H z

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VS-ST223C..C Series

Vishay Semiconductors

1E5

1E4

1

1E3

0.1

1E2

Peak On-state Current (A)

1E1

1E1 1E2 1E3 1E4

ST223C ..C Series
Sin uso id a l p uls e

tp

0.2

0.3

0.5

10

4

2

20 joules per pulse

Pu lse Ba sew idth (µs)

Fig. 16 - Maximum On-State Energy Power Loss Characteristics

100

Rectangular gate pulse
a ) R e c om m e n d e d lo ad lin e f o r
rated di/dt : 20V, 10oh m s; tr<=1 µs
b ) R e c o m m en d e d lo a d lin e f o r
<=30% rated d i/dt : 10V, 10oh m s

10

tr<=1 µs

1

Instan tan eo us G ate V olta g e (V )

0.1

0.001 0.01 0.1 1 10 100

VGD

IG D

ST22 3C. .C S e ries
Rectangular pulse

di/dt = 50A/µs

tp

0.1

1E1 1E2 1E3 1E4

Pulse Basewidth (µs)

(1) PGM = 1 0W , tp = 20m s
(2) PGM = 2 0W , tp = 10m s
(3) PGM = 4 0W , tp = 5m s
(4) PG M = 60W, tp = 3.3m s

(a)

(b)

Tj=-40 °C

Tj=25 °C

Tj=125 °C

(2)

(1)

De vice : ST223C ..C Se ries Freque n cy Limite d by P G (AV )

Instan tane ous G ate C urre nt (A )

(3 )

0.2

(4)

0.3

0.5

5

2

1

20 jo ules p er pulse

10

Fig. 17 - Gate Characteristics

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3 = fast-on term.

(gate and aux. cathode soldered leads)

2 - Thyristor

3 -Essential part number

4 - 3 = fast turn off

5 - C = ceramic PUK

6 - Voltage code x 100 = V

RRM

(see Voltage Ratings table)

11

7 - C = PUK case A-PUK (TO-200AB)

8 - Reapplied dV/dt code (for t

q

test condition)

9 -t

q

code

10 - 0 = eyelet term.

(gate and aux. cathode unsoldered leads)

1 = fast-on term.

(gate and aux. cathode unsoldered leads)

2 = eyelet term.

(gate and aux. cathode soldered leads)

- Critical dV/dt:

None = 500 V/μs (standard value)

L = 1000 V/μs (special selection)

* Standard part number.
All other types available only on request.

tq (µs)

dV/dt - t

q

combinations available

dV/dt (V/µs) 20 50 100 200 400

10 CN DN EN FN* -­12 CM DM EM FM -­15 CL DL EL FL* HL
18 CP DP EP FP HP
20 CK DK EK FK HK
25 -- -- -- -- HJ
30 -- -- -- -- HH

Device code

51

32 4

6 7 8 9 10 11

STVS-223 C08C H K 1 -

1 -Vishay Semiconductors product

ORDERING INFORMATION TABLE

VS-ST223C..C Series

Vishay Semiconductors

Dimensions www.vishay.com/doc?95074

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LINKS TO RELATED DOCUMENTS

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4.75 (0.19)

28 (1.10)

6.5 (0.26)

19 (0.75)

DIA. MAX.

0.3 (0.01) MIN.

0.3 (0.01) MIN.

13.7/14.4

(0.54/0.57)

25° ± 5°

Gate terminal for

1.47 (0.06) DIA.
pin receptacle

19 (0.75)

DIA. MAX.

38 (1.50) DIA MAX.

2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep

42 (1.65) MAX.

Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

C

A

G

Note:

A = Anode

C = Cathode

G = Gate

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

A-PUK (TO-200AB)

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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 01-Jan-2022

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Document Number: 91000