Datasheet ST203C12CHH2L, ST203C12CHH2, ST203C12CHH1L, ST203C12CHH1, ST203C12CHH0L Datasheet (International Rectifier)
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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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370A
ST203C..C SERIES
INVERTER GRADE THYRISTORS Hockey Puk Version
Bulletin I25176/A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
case style TO-200AB (A-PUK)
I
T(AV)
370 A
@ T
hs
55 °C
I
T(RMS)
700 A
@ T
hs
25 °C
I
TSM
@ 50Hz 5260 A
@ 60Hz 5510 A
I
2
t @ 50Hz 138 KA2s
@ 60Hz 126 KA
2
s
V
DRM/VRRM
1000 to 1200 V
t
q
range 20 to 30 µs
T
J
- 40 to 125 °C
Parameters ST203C..C Units
Major Ratings and Characteristics
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ST203C..C Series
Voltage V
DRM/VRRM
, maximum V
RSM
, maximum I
DRM/IRRM
max.
Type number Code repetitive peak voltage non-repetitive peak voltage
@ TJ = TJ max.
V V mA
10 1000 1100
12 1200 1300
ST203C..C 40
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Frequency Units
50Hz 860 750 1340 1160 5620 5020
400Hz 840 706 1400 1220 2940 2590
1000Hz 700 580 1350 1170 1750 1520 A
2500Hz 430 340 980 830 910 780
Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd V
DRM
V
DRM
V
DRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF
I
TM
180oel
180
o
el
100µs
I
TM
I
TM
Current Carrying Capability
V
I
T(AV)
Max. average on-state current 370 (140) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled
I
T(RMS)
Max. RMS on-state current 700 DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one half cycle, 5260 t = 10ms No voltage
non-repetitive surge current 5510 A t = 8.3ms reapplied
4420 t = 10ms 100% V
RRM
4630 t = 8.3ms reapplied Sinusoidal half wave,
I
2
t Maximum I2t for fusing 138 t = 10ms No voltage Initial TJ = TJ max
126 t = 8.3ms reapplied
98 t = 10ms 100% V
RRM
89 t = 8.3ms reapplied
I
2
√t Maximum I2√t for fusing 1380 KA2√s t = 0.1 to 10ms, no voltage reapplied
Parameter ST203C..C Units Conditions
On-state Conduction
KA2s
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ST203C..C Series
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current Fig. 8 - Maximum Non-repetitive Surge Current
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ST203C..C Series
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
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ST203C..C Series
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
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ST203C..C Series
Fig. 17 - Gate Characteristics
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ST203C..C Series
V
TM
Max. peak on-state voltage 1.72 ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
Low level value of forward
slope resistance
r
t
2
High level value of forward
slope resistance
I
H
Maximum holding current 600 TJ = 25°C, IT > 30A
I
L
Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Parameter ST203C..C Units Conditions
On-state Conduction
1.17 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
1.22 (I > π x I
T(AV)
), TJ = TJ max.
V
0.92 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
0.83 (I > π x I
T(AV)
), TJ = TJ max.
mΩ
mA
di/dt Max. non-repetitive rate of rise T
J
= TJ max., V
DRM
= rated V
DRM
of turned-on current I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM, ITM
= 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= TJ max, I
TM
= 300A, commutating di/dt = 20A/µs
V
R
= 50V, tp = 500µs, dv/dt: see table in device code
Switching
Parameter ST203C..C Units Conditions
1000 A/µs
t
d
Typical delay time 0.8
Min Max
dv/dt Maximum critical rate of rise of T
J
= TJ max. linear to 80% V
DRM
, higher value
off-state voltage available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter ST203C..C Units Conditions
Blocking
500 V/µs
40 mA T
J
= TJ max, rated V
DRM/VRRM
applied
P
GM
Maximum peak gate power 60
P
G(AV)
Maximum average gate power 10
I
GM
Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger 20 mA
V
GD
Max. DC gate voltage not to trigger 0.25 V
Triggering
Parameter ST203C..C Units Conditions
20
5
V TJ = TJ max, tp ≤ 5ms
200 mA
3 V
T
J
= 25°C, VA = 12V, Ra = 6Ω
TJ = TJ max., rated V
DRM
applied
t
q
Max. turn-off time 20 30
µs
W TJ = TJ max, f = 50Hz, d% = 50
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ST203C..C Series
T
J
Max. operating temperature range -40 to 125
T
stg
Max. storage temperature range -40 to 150
R
thJ-hs
Max. thermal resistance, 0.17 DC operation single side cooled
junction to heatsink 0.08 DC operation double side cooled
R
thC-hs
Max. thermal resistance, 0.033 DC operation single side cooled
case to heatsink 0.017 DC operation double side cooled
F Mounting force, ± 10% 4900 N
(500) (Kg)
wt Approximate weight 50 g
Parameter ST203C..C Units Conditions
K/W
Thermal and Mechanical Specification
°C
Case style TO - 200AB (A-PUK) See Outline Table
K/W
∆R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Single Side Double Side Single Side Double Side
180° 0.015 0.017 0.011 0.011
120° 0.018 0.019 0.019 0.019
90° 0.024 0.024 0.026 0.026 K/W T
J
= TJ max.
60° 0.035 0.035 0.036 0.037
30° 0.060 0.060 0.060 0.061
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
Ordering Information Table
5 6 8 9
ST 20 3 C 12 C H H 1
3
4
10
7
Device Code
1 2
1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6 - C = Puk Case TO-200AB (A-PUK)
7 - Reapplied dv/dt code (for t
q
test condition)
8 - t
q
code
9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)
tq(µs)
*Standard part number.
All other types available only on request.
dv/dt - tq combinations available
dv/dt (V/µs) 20 50 100 200 400
20 CK DK EK -- -25 CJ DJ EJ FJ * -30 CH DH EH FH HH
10
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ST203C..C Series
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Outline Table
DIA. MAX.
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
25°± 5°
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
42 (1.65) MAX.
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
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