Datasheet ST180C20C3L, ST180C20C3, ST180C20C2L, ST180C20C2, ST180C20C1L Datasheet (International Rectifier)

350A

PHASE CONTROL THYRISTORS Hockey Puk Version

ST180C..C SERIES

Bulletin I25164/B

Features

Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)

Typical Applications

DC motor controls
Controlled DC power supplies
AC controllers

I

T(AV)

350 A

@ T

hs

55 °C

I

T(RMS)

660 A

@ T

hs

25 °C

I

TSM

@ 50Hz 5000 A
@ 60Hz 5230 A

I

2

t @ 50Hz 125 KA2s

@ 60Hz 114 KA

2

s

V

DRM/VRRM

400 to 2000 V

t

q

typical 100 µs

T

J

- 40 to 125 °C

Parameters ST180C..C Units

Major Ratings and Characteristics

case style TO-200AB (A-PUK)

ST180C..C Series

2222222222222

12

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

DRM/VRRM

, max. repetitive V

RSM

, maximum non- I

DRM/IRRM

max.

Type number Code peak and off-state voltage repetitive peak voltage

@ TJ = TJ max

V V mA

04 400 500
08 800 900
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100

ST180C..C 30

I

T(AV)

Max. average on-state current 350 (140) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled

I

T(RMS)

Max. RMS on-state current 660 @ 25°C heatsink temperature double side cooled

I

TSM

Max. peak, one-cycle 5000 t = 10ms No voltage
non-repetitive surge current 5230 A t = 8.3ms reapplied

4200 t = 10ms 100% V

RRM

4400 t = 8.3ms reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing 125 t = 10ms No voltage Initial TJ = TJ max.

114 t = 8.3ms reapplied

88 t = 10ms 100% V

RRM

81 t = 8.3ms reapplied

I

2

√t Maximum I2√t for fusing 1250 KA2√s t = 0.1 to 10ms, no voltage reapplied

V

T(TO)

1

Low level value of threshold
voltage

V

T(TO)

2

High level value of threshold
voltage

r

t1

Low level value of on-state
slope resistance

r

t2

High level value of on-state
slope resistance

V

TM

Max. on-state voltage 1.96 V Ipk= 750A, TJ = TJ max, tp = 10ms sine pulse

I

H

Maximum holding current 600

I

L

Max. (typical) latching current 1000 (300)

1.08 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

1.18 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

1.14 (I > π x I

T(AV)

),TJ = TJ max.

Parameter ST180C..C Units Conditions

1.14 (I > π x I

T(AV)

),TJ = TJ max.

On-state Conduction

KA2s

V

mΩ

mA T

J

= TJ max, anode supply 12V resistive load

ST180C..C Series

Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics

Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics

Fig. 8 - Maximum Non-Repetitive Surge Current

Fig. 7 - Maximum Non-Repetitive Surge Current

ST180C..C Series

Fig. 9 - On-state Voltage Drop Characteristics

Fig. 10 - Thermal Impedance Z

thJ-hs

Characteristics

Fig. 11 - Gate Characteristics

ST180C..C Series

23

di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs

of turned-on current T

J

= TJ max, anode voltage ≤ 80% V

DRM

Gate current 1A, dig/dt = 1A/µs
V

d

= 0.67% V

DRM, TJ

= 25°C

I

TM

= 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V

dv/dt

= 20V/µs, Gate 0V 100Ω, tp = 500µs

Parameter ST180C..C Units Conditions

t

d

Typical delay time 1.0

Switching

t

q

Typical turn-off time 100

µs

1000 A/µs

dv/dt Maximum critical rate of rise of

off-state voltage

I

DRM

Max. peak reverse and off-state

I

RRM

leakage current

Blocking

500 V/µs TJ = TJ max linear to 80% rated V

DRM

Parameter ST180C..C Units Conditions

30 mA TJ = TJ max, rated V

DRM/VRRM

applied

P

GM

Maximum peak gate power 10 TJ = TJ max, tp ≤ 5ms

P

G(AV)

Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50

I

GM

Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms

+V

GM

Maximum peak positive
gate voltage

-V

GM

Maximum peak negative
gate voltage

T

J

= - 40°C

mA T

J

= 25°C

T

J

= 125°C

T

J

= - 40°C

V T

J

= 25°C

T

J

= 125°C

I

GD

DC gate current not to trigger 10 mA

Parameter ST180C..C Units Conditions

20

5.0

Triggering

TYP. MAX.

180 -

90 150
40 -

2.9 -

1.8 3.0

1.2 -

V

GD

DC gate voltage not to trigger 0.25 V

Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V

DRM

anode-to-cathode applied

T

J

= TJ max

Max. required gate trigger/ cur­rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied

V

GT

DC gate voltage required
to trigger

I

GT

DC gate current required
to trigger

W

V T

J

= TJ max, tp ≤ 5ms

ST180C..C Series

2222222222222

12

T

J

Max. operating temperature range -40 to 125

T

stg

Max. storage temperature range -40 to 150

R

thJ-hs

Max. thermal resistance, 0.17 DC operation single side cooled
junction to heatsink 0.08 DC operation double side cooled

R

thC-hs

Max. thermal resistance, 0.033 DC operation single side cooled
case to heatsink 0.017 DC operation double side cooled

F Mounting force, ± 10% 4900 N

(500) (Kg)

wt Approximate weight 50 g

Parameter ST180C..C Units Conditions

K/W

Thermal and Mechanical Specification

°C

Case style TO - 200AB (A-PUK) See Outline Table

K/W

∆R

thJ-hs

Conduction

(The following table shows the increment of thermal resistence R

thJ-hs

when devices operate at different conduction angles than DC)

Single Side Double Side Single Side Double Side

180° 0.015 0.015 0.011 0.011 T

J

= TJ max.

120° 0.018 0.019 0.019 0.019

90° 0.024 0.024 0.026 0.026 K/W
60° 0.035 0.035 0.036 0.037

30° 0.060 0.060 0.060 0.061

Sinusoidal conduction Rectangular conduction

Conduction angle Units Conditions

1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V

RRM

(See Voltage Rating Table)

6 - C = Puk Case TO-200AB (A-PUK)
7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)

1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)

8 - Critical dv/dt:None = 500V/µsec (Standard value)

L = 1000V/µsec (Special selection)

Ordering Information Table

Device Code

51

2

3

4

ST 18 0 C 20 C 1

7

6

8

ST180C..C Series

23

Outline Table

Case Style TO-200AB (A-PUK)

All dimensions in millimeters (inches)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

DIA. MAX.

4.75 (0.19)

28 (1.10)

6.5 (0.26)

19 (0.75)

0.3 (0.01) MIN.

0.3 (0.01) MIN.

13.7 / 14.4

(0.54 / 0.57)

25°± 5°

GATE TERM. FOR

1.47 (0.06) DIA.
PIN RECEPTACLE

ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.

19 (0.75)

DIA. MAX.

38 (1.50) DIA MAX.

2 HOLES 3.56 (0.14) x

1.83 (0.07) MIN. DEEP

42 (1.65) MAX.