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High voltage fast-switching NPN power transistor
Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Very high switching speed
■ Integrated free-wheeling diode
ST13003DN
Preliminary data
Application
■ Compact fluorescent lamps (CFLs)
Description
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
3
2
1
SOT-32
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
ST13003DN 13003DN SOT-32BAG
February 2010 Doc ID 17186 Rev 1 1/8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
8
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Electrical ratings ST13003DN
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
V
CEO
V
EBO
I
I
CM
I
I
BM
P
TOT
T
STG
T
Table 3. Thermal data
Collector-emitter voltage (VBE = 0) 700 V
Collector-emitter voltage (IB = 0) 400 V
Collector-base voltage (IC = 0) 9 V
Collector current 1 A
C
Collector peak current (tP < 5 ms) 2 A
Base current 0.5 A
B
Base peak current (tP < 5 ms) 1 A
Total dissipation at Tc = 25 °C 20 W
Storage temperature -55 to 150
Max. operating junction temperature 150
J
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case 6.25 °C/W
°C
2/8 Doc ID 17186 Rev 1
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ST13003DN Electrical characteristics
2 Electrical characteristics
T
= 25 °C; unless otherwise specified.
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
(1)
V
CE(sat)
V
BE(sat)
h
FE
Collector cut-off current
= 0)
(V
BE
Emitter cut-off current
= 0)
(I
C
Collector-emitter sustaining
voltage (IB = 0)
Collector-emitter saturation
(1)
voltage
Base-emitter saturation
(1)
voltage
DC current gain
Inductive Load
t
t
V
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Storage time
s
Fall t ime
f
Diode forward voltage IF = 350 mA 1.5 V
F
V
CE
V
CE
V
EB
I
= 10 mA 400 V
C
= 0.5 A IB = 125 mA
I
C
IC = 1 A IB = 330 mA
= 0.5 A IB = 125 mA
I
C
= 1 A IB = 330 mA
I
C
IC = 0.5 A, V
IC = 1 A V
= 0.4 A _ V
I
C
I
B(on)
V
BB(off)
= 700 V
= 700 V TC = 125 °C
15mA
mA
= 9 V 1 mA
0.7
1.2VV
1.2
1.3VV
= 2 V
CE
= 10 V
CE
= 300 V
clamp
= -I
B(off)
= 80 mA
= - 5 V Figure 2
6
5
2.5
180
18
15
µs
ns
Doc ID 17186 Rev 1 3/8
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Electrical characteristics ST13003DN
2.1 Test circuit
Figure 2. Inductive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
3. Fast recovery rectifier
4/8 Doc ID 17186 Rev 1
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ST13003DN Package mechanical data
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
Doc ID 17186 Rev 1 5/8
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Package mechanical data ST13003DN
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ST13003DN Revision history
4 Revision history
Table 5. Document revision history
Date Revision Changes
25-Feb-2010 1 First release.
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ST13003DN
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