Datasheet st13003d-k Datasheet

Page 1
High voltage fast-switching NPN power transistor
Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Integrated antiparallel collector-emitter diode
Applications
ST13003D-K
1
2
3
■ Electronic ballast for fluorescent lighting
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
SOT-32

Figure 1. Internal schematic diagram

Table 1. Device summary

Order code Marking Package Packaging
ST13003D-K 13003D SOT-32 Bag
September 2009 Doc ID 14182 Rev 2 1/8
www.st.com
8
Page 2
Electrical ratings ST13003D-K

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit
V
V
V
P
T
CES
CEO
EBO
I
I
CM
I
I
BM
TOT
STG
T
Collector-emitter voltage (VBE = 0) 700 V
Collector-emitter voltage (IB = 0) 400 V
Emitter-base voltage (IC = 0, IB = 0.75 A, tP < 10 µs) V
Collector current 1.5 A
C
(BR)EBO
Collector peak current (tP < 5 ms) 3 A
Base current 0.75 A
B
Base peak current (tP < 5 ms) 1.5 A
Total dissipation at Tc = 25 °C 40 W
Storage temperature -55 to 150 °C
Max. operating junction temperature 150 °C
J
V
2/8 Doc ID 14182 Rev 2
Page 3
ST13003D-K Electrical characteristics

2 Electrical characteristics

T
= 25 °C unless otherwise specified
case

Table 3. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
V
(BR)EBO
V
CEO(sus)
V
CE(sat)
V
BE(sat)
h
FE
Collector cut-off current (VBE = 0)
Emitter-Base breakdown voltage (IC = 0)
Collector-emitter
(1)
sustaining voltage (IB = 0)
Collector-emitter
(1)
saturation voltage
Base-emitter saturation
(1)
voltage
DC current gain
Resistive load
t
r
t
s
t
f
Rise time Storage time Fall time
Inductive load
t
s
V
1. Pulse test: pulse duration 300 ≤ µs, duty cycle ≤ 2 %
Storage time
Diode forward voltage IF = 0.5 A 1.5 V
F
V
= 700 V
CE
V
= 700 V Tc = 125 °C
CE
= 10 mA 9 18 V
I
E
I
= 10 mA 400
C
= 0.5 A _ IB = 0.1 A
I
C
= 1 A _ _ IB = 0.25 A
I
C
= 1.5 A _ _ IB = 0.5 A
I
C
= 0.5 A _ IB = 0.1 A
I
C
= 1 A _ _ IB = 0.25 A
I
C
I
= 0.5 A V
C
= 1 A V
I
C
= 125 V IC = 1 A
V
CC
I
= 0.2 A I
B1
= 25 µs
T
p
IC = 1 A I V
= -5 V L = 50 mH
BE
V
Clamp
= 300 V
CE
CE
= -0.2 A
B2
= 0.2 A
B1
= 2 V = 2 V
8 5
0.8 µs
1 5
0.5 1 3
1
1.2
20 25
1 4
0.7
mA mA
V
V V V
V V
µs µs µs
Doc ID 14182 Rev 2 3/8
Page 4
Electrical characteristics ST13003D-K

2.1 Test circuits

Figure 2. Inductive load switching test circuit

1. Fast electronic switch
2. Non-inductive resistor
3. Fast recovery rectifier

Figure 3. Resistive load switching test circuit

1. Fast electronic switch
2. Non-inductive resistor
4/8 Doc ID 14182 Rev 2
Page 5
ST13003D-K Package mechanical data

3 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
Doc ID 14182 Rev 2 5/8
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Package mechanical data ST13003D-K
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Page 7
ST13003D-K Revision history

4 Revision history

Table 4. Document revision history

Date Revision Changes
15-Nov-2007 1 Initial release.
08-Sep-2009 2 Updated packaging information Table 1 on page 1.
Doc ID 14182 Rev 2 7/8
Page 8
ST13003D-K
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