
High voltage fast-switching NPN power transistor
Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
■ Integrated antiparallel collector-emitter diode
Applications
ST13003D-K
1
2
3
■ Electronic ballast for fluorescent lighting
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
SOT-32
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
ST13003D-K 13003D SOT-32 Bag
September 2009 Doc ID 14182 Rev 2 1/8
www.st.com
8

Electrical ratings ST13003D-K
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
V
V
P
T
CES
CEO
EBO
I
I
CM
I
I
BM
TOT
STG
T
Collector-emitter voltage (VBE = 0) 700 V
Collector-emitter voltage (IB = 0) 400 V
Emitter-base voltage (IC = 0, IB = 0.75 A, tP < 10 µs) V
Collector current 1.5 A
C
(BR)EBO
Collector peak current (tP < 5 ms) 3 A
Base current 0.75 A
B
Base peak current (tP < 5 ms) 1.5 A
Total dissipation at Tc = 25 °C 40 W
Storage temperature -55 to 150 °C
Max. operating junction temperature 150 °C
J
V
2/8 Doc ID 14182 Rev 2

ST13003D-K Electrical characteristics
2 Electrical characteristics
T
= 25 °C unless otherwise specified
case
Table 3. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
V
(BR)EBO
V
CEO(sus)
V
CE(sat)
V
BE(sat)
h
FE
Collector cut-off current
(VBE = 0)
Emitter-Base breakdown
voltage (IC = 0)
Collector-emitter
(1)
sustaining voltage (IB = 0)
Collector-emitter
(1)
saturation voltage
Base-emitter saturation
(1)
voltage
DC current gain
Resistive load
t
r
t
s
t
f
Rise time
Storage time
Fall time
Inductive load
t
s
V
1. Pulse test: pulse duration 300 ≤ µs, duty cycle ≤ 2 %
Storage time
Diode forward voltage IF = 0.5 A 1.5 V
F
V
= 700 V
CE
V
= 700 V Tc = 125 °C
CE
= 10 mA 9 18 V
I
E
I
= 10 mA 400
C
= 0.5 A _ IB = 0.1 A
I
C
= 1 A _ _ IB = 0.25 A
I
C
= 1.5 A _ _ IB = 0.5 A
I
C
= 0.5 A _ IB = 0.1 A
I
C
= 1 A _ _ IB = 0.25 A
I
C
I
= 0.5 A V
C
= 1 A V
I
C
= 125 V IC = 1 A
V
CC
I
= 0.2 A I
B1
= 25 µs
T
p
IC = 1 A I
V
= -5 V L = 50 mH
BE
V
Clamp
= 300 V
CE
CE
= -0.2 A
B2
= 0.2 A
B1
= 2 V
= 2 V
8
5
0.8 µs
1
5
0.5
1
3
1
1.2
20
25
1
4
0.7
mA
mA
V
V
V
V
V
V
µs
µs
µs
Doc ID 14182 Rev 2 3/8

Electrical characteristics ST13003D-K
2.1 Test circuits
Figure 2. Inductive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
3. Fast recovery rectifier
Figure 3. Resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
4/8 Doc ID 14182 Rev 2

ST13003D-K Package mechanical data
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
Doc ID 14182 Rev 2 5/8

Package mechanical data ST13003D-K
6/8 Doc ID 14182 Rev 2

ST13003D-K Revision history
4 Revision history
Table 4. Document revision history
Date Revision Changes
15-Nov-2007 1 Initial release.
08-Sep-2009 2 Updated packaging information Table 1 on page 1.
Doc ID 14182 Rev 2 7/8

ST13003D-K
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