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HIGH VOLTAGE FAST-SWITCHING
■ MEDIUMVOLTAGECAPABILITY
■ LOW SPREADOF DYNAMICPARAMETERS
■ MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
■ VERYHIGH SWITCHING SPEED
APPLICATIONS:
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ SWITCHMODEPOWERSUPPLIES
ST13003
NPN POWER TRANSISTOR
1
2
3
DESCRIPTION
The device is manufactured using high voltage
SOT-32
Multi Epitaxial Planar technology for high
switchingspeeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
INTERNAL SCHEMATIC DIAGRAM
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE= 0) 700 V
CES
Collector-Emitter Voltage (IB= 0) 400 V
CEO
Emitter-Base V oltage
EBO
=0, IB=0.75A, tp<10µs, Tj<150oC)
(I
C
Collect or Current 1.5 A
I
C
Collect or Peak Current ( tp<5ms) 3 A
CM
Base Curre nt 0.75 A
I
B
Base Peak Current (tp<5ms) 1.5 A
BM
Total Dissipat ion at Tc=25oC40W
tot
Stora ge T emperature -65 to 150
stg
BV
EBO
V
o
C
June 2000
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ST13003
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance J u nc tion-case Max
Ther mal Resistance J u nc tion-ambient Max
3.12
89
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Condition s Min. Typ. Max. Unit
BV
I
CEV
EBO
Collector Cut-off
Current (V
= - 1. 5V )
BE
Emitt er-Base
V
=700V
CE
=700V Tj=125oC
V
CE
I
=10mA 9 18 V
E
1
5
mA
mA
Break dow n Volt age
=0)
(I
C
V
CEO(sus)
V
CE(sat)
V
BE(sat)
h
∗ Co llec tor-Em it t er
Sust aining Voltag e
=0)
(I
B
∗ Collector-Em it t er
Saturation Voltage
∗ Base-Emitt er
Saturation Voltage
DC Current G ain IC=0.5A VCE=2V
FE
I
=10mA
C
L = 25mH
IC=0.5A IB=0.1A
=1A IB=0.25A
I
C
I
=1.5A IB=0.5A
C
IC=0.5A IB=0.1A
=1A IB=0.25A
I
C
Gr oup A
Gr oup B
=1A VCE=2V
I
C
400 V
0.5
1
3
1.0
1.2
8
15
5
20
35
25
V
V
V
V
V
RESI STIVE LOAD
t
Rise Tim e
r
t
s
t
f
St orage Time
Fall T ime
INDUCTIV E LOAD
t
∗
Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
s
St orage Time
=1A VCC= 125 V
I
C
=0.2A IB2=-0.2A
I
B1
=25µs
T
p
IC=1A IB1=0.2A
=-5V L=50mH
V
BE
= 300 V
V
clamp
0.8 µs
1.0
4.0
0.7
µs
µs
µs
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ST13003
Safe Operating Areas
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
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ST13003
InductiveFall Time InductiveStorage Time
ReverseBiased SOA
4/7
Page 5
Figure1: Inductive Load Switching TestCircuits.
Figure2: Resistive Load Switching Test Circuits.
ST13003
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ST13003
SOT-32 (TO-126) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
mm inch
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H2
c1
0016114
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ST13003
Information furnished is believed tobe accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronicsGROUP OF COMPANIES
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