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Product Description
g
Stanford Microdevices’ SSW-508 is a high performance
Gallium Arsenide Field Effect Transistor MMIC switch
housed in a low-cost surface-mountable 8-pin small outline
plastic package.
This single-pole, single-throw, non-reflective switch
consumes less than 50uA and operates at -5V and 0V for
control bias. P1dB at -5V is +25dBm typical and can be
increased to +28dBm with -8V supply.
The die is fabricated using 0.5 micron FET process with
gold metallization and silicon nitride passivation to achieve
excellent performance and reliability.
Isolation vs. Frequency
-20
-30
dB
-40
VControl = -5 V
SSW-508
DC-4 GHz GaAs MMIC
SPST Switch
Product Features
• High Isolation : 40dB at 1GHz, 30dB at 2GHz
• Low DC Power Consumption
• Low Insertion Loss : 1.0dB at 2GHz
• Non-Reflective
• Low Cost Small Outline Plastic Package
-50
-60
DC1234
GHz
Applications
• Analog/Digital Wireless Communications
• AMPS, PCS, DEC and GSM Bands
Electrical Specifications at Ta = 25C
Symbol
Ins. Insertion Loss f = 0.05-1.0 GH z
Isol. Isolation f = 0.05-1.0 GH z
VSW R on Input & Output VS W R
VSW R off Input & Output VSW R
P
1dB
TOIP Third Order Intercept Point V = -5V
ID De vice C urrent uA 40
Isw S w itch in
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Param eters & Test Conditions:
=50 ohm s V= -5V
Z
0
f = 1.00-2.0 GH z
f = 2.00-4.0 GH z
f = 1.00-2.0 GH z
f = 2.00-4.0 GH z
(on or low loss state)
(off or isolated state)
1dB C ompression at 2.0 GHz V = -5V
10% to 90% or 90% to 10%
Speed
f = 0.05-2.0 GH z
f = 2.00-4.0 GH z
f = 0.05-2.0 GH z
f = 2.00-4.0 GH z
V = -8V
V = -8V
7-33
Units Min. Typ . M ax.
dB
dB
dB
dB
dB
dB
-
-
-
-
dBm
dBm
dBm
dBm
nS 10
35
25
0.8
1.0
1.2
45
35
30
1.3
1.7
1.3
1.7
+25
+28
+44
+47
1.2
1.4
Switches
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SSW-508 DC-4 GHz GaAs MMIC SPST Switch
Absolute Maximum Ratings
RF Input Power 2W Max>500MHz
Device Volt age -10V
Operating
Temperature
Storage
Temperature
Thermal Resistance 20 deg C /W
-45C to + 85C
-65C to + 150C
Pin Out
Pin Function
1J1
2V1
3V2
4GND
5J2
6GND
7GND
8GND
Truth Table
V1 V2 J1-J2 J1-J3
-5 0 Low Loss Isolation
0 -5 Isolation Low Loss
Switch Schematic
Switches
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Insertion Loss vs. Frequency
VControl = -5 V
0.0
-0.5
-1.0
dB
-1.5
-2.0
DC123456
GHz
On Port Input/Output VSWR vs. Frequency
VControl = -5 V
2.0
1.8
1.6
1.4
1.2
1.0
DC123456
GHz
7-34
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