Datasheet SSW-424 Datasheet (Stanford Microdevices)

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94085

Preliminary

Preliminary

EDS-101100 Rev B

Product Description

SSW-424

DC-6 GHz High Power GaAs MMIC
SPDT Switch

Electrical Specifications at Ta = 25C

Isolation vs. Frequency

VControl = -5 V

GHz

dB

Product Features

 High Compression Point : up to 4 Watts
 HIgh LInearity : TOIP +55dBm at 2GHz
 Low DC Power Consumption

 Low Insertion Loss : 0.7dB at 2GHz

 Operates from Positive or Negative 3V to 8V

Supplies

 Low Cost Surface-Mountable Ceramic Package

Applications

 Analog/Digital Wireless Communications
 Spread Spectrum
 AMPS, PCS, DECT, IS-95, IS-136, 802.11,

CDPD and GSM.

-30

-20

-10

0

DC123456

Stanford Microdevices SSW-424 is a high performance Gallium
Arsenide Field Effect Transistor MMIC switch housed in a low­cost surface mountable small outline ceramic package.

This single-pole, double-throw reflective switch consumes less
than 50uA and can operate with positive or negative 3V to 8V
supply voltages, making it suitable for use in both infrastructure
and subscriber equipment. This switch can be used in all analog
and digital wireless communication systems including (but not
limited to) AMPS, PCS, DECT, IS-95, IS-136, 802.11, CDPD
and GSM.

At +5V or 5V bias, typical output power at 1dB compression is
3 watts. 1dB output power over 4 watts and IP3 over +55dBm
may be achieved with higher control voltages.

lobmyS

tseT&sretremarP

V5-ro5+=vsmho05=oZ:snoitidnoC

stinU .niM .pyT .xaM

snI

ssoLnoitresnIzHG0.2-50.0=f

zHG0.4-00.2=f

zHG00.6-00.4=f

Bd
Bd
Bd

7.0

9.0

2.1

0.1

3.1

losI

noitalosIzHG0.2-50.0=f

zHG0.4-00.2=f

zHG00.6-00.4=f

Bd
Bd
Bd

02
51

52
02
51

noRWSV

RWSVtuptuO&tupnI
)etatsssolwolrono(

zHG0.2-50.0=f
zHG0.6-00.2=f

1.1

3.1

ffoRWSV

RWSVtuptuO&tupnI
)etatsdetalosiroffo(

zHG0.2-50.0=f
zHG0.6-00.2=f

1.1

3.1

P

Bd1

zHG0.2@rewoPtuptuO

noisserpmoCBd1ta

V8-roV8+=V
V5-roV5+=V
V3-roV3+=V

mBd
mBd
mBd

63+
43+

13+

PIOT

tpecretnIredrOdrihTV8-roV8+=V

V5-roV5+=V
V3-roV3+=V

mBd
mBd
mBd

55+
35+
05+

dI

tnerruCeciveD Au04

wsI

deepSgnihctiwS

%01ot%09ro%09ot%01

cesn01

2

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

EDS-101100 Rev B

SSW-424 DC-6.0 GHz GaAs MMIC Switches

-2.0

-1.5

-1.0

-0.5

0.0

DC1234

1.0

1.2

1.4

1.6

1.8

2.0

DC1234

rewoPtupnIFRzHM005>xaMW6

egatloVlortnoCV8+roV8-

erutarepmeTgnitarepOC58+otC54-

erutarepmeTegarotSC051+otC56-

ecnatsiseRlamrehTW/Cged02

Absolute Maximum Ratings

Operation of this device above any one of these
parameters may cause permanent damage.

On Port Input/Output VSWR vs. Frequency

VControl = -5 V

GHz

dB

dB

GHz

Insertion Loss vs. Frequency

VControl = -5 V

3

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

Preliminary

EDS-101100 Rev B

SSW-424 DC-6.0 GHz GaAs MMIC Switches

Preliminary

.290 [7.37]

.065 [1.65] (8X)

.160 [4.06]

.015 [.38]

.020 [.51] (8X)

.050 [1.27]

.010 [.25]

60°

.200 [5.08]

.065 [1.65] REF

7° MAX. TYP

.008 [.20] (8X)

.096 [2.44]

.036 [.91]

.010 [.25] REF

.140 [3.56] REF

.010 [.25]

.010 [.25]

.140 [3.56]

.180 [4.57]

.030 [.76] TYP(8X)

.160 [4.06] REF

.200 [5.08] REF

DOT MARK

DENOTES

PIN 1

LOCATION

HEATSINK PLATE

45° MAX. TYP(8X)

SEATING PLANE TO BE ±.002 FROM
HEATSINK PLATE BOTTOM.

.035 [.89] TYP

(4X)

.020 [.51]

R.010 [.25 ] TYP

(4X)

HEATSINK PLATE

Package Dimensions

W4

Note 1: The Vdd pin should be permanently connected to the most positive control
voltage. If using positive (0V / 5V) control signals, Vdd = 5V. If using negative (-5V / 0V)
control voltages, Vdd = 0V.
Note 2: The control voltage (v = |V1 - V2|) may be from 3V to 8V in magnitude.
Note 3: Decouple Vdd to a good RF ground, and use DC blocking capacitors on all RF
pins (J1, J2, & J3).

Caution ESD Sensitive:

Appropriate precautions in handling, packaging and
testing devices must be observed.

Truth Table

ddV

1eton(

)

1V

)2eton(

2V

)2eton(

2J-1J3J-1J

00V-ssoLwoL

noitalosI

)Z-iH(

0V-0

noitalosI

)Z-iH(

ssoLwoL

V+

3eton(

)

0V+

noitalosI

)Z-iH(

ssoLwoL

V+

)3eton(

V+0 ssoLwoL

noitalosI

)Z-iH(

The part will be symbolized with a W4 designator
on the top surface of the package.

Part Symbolization

Switch Schematic

Note 1: The switch state shown is when V1
is 3v to 8v greater than V2.

Pin Out

niPnoitcnuFnoitpircseD

1DNGdnuorG

21V1lortnoC

31JniFR

42V2lortnoC

53J2tuoFR

6ddVlortnoCsaiB

7DNGdnuorG

82J1tuoFR

DIMENSIONS ARE IN INCHES [MM]

rebmuNtraPleeRrePseciveDeziSleeR

424-WSS005"7

Part Number Ordering Information