Datasheet SSW-308 Datasheet (Stanford Microdevices)

Product Description

SSW-308

Stanford Microdevices’ SSW-308 is a high perfomance
Gallium Arsenide Field Effect Transistor MMIC switch housed
in a low-cost surface-mountable small outline plastic

DC-3 GHz Low Cost

package.

GaAs MMIC SPDT Switch

This single-pole, double-throw, reflective switch consumes
less than 40uA and operates with 0V/-5V control voltages.
This switch can be used in both analog and digital wireless
communication systems including AMPS, PCS, DECT , and
GSM.

Typical output power at 1dB compression is +28dBm. 1dB
output power over 1 watt may be achieved with higher
control voltages.

The die is fabricated using 0.5 micron FET process with gold
metallization and silicon nitride passivation to achieve

excellent performance and reliability.

Isolation vs. Frequency

VControl = -5 V

-10

-20

-30

dB

-40

-50
DC 1 2 3

GHz

Electrical Specifications at Ta = 25C

Symbol

Ins Insertion Loss f = 0.05-1.0GHz

Isol Isolation f = 0.05-1.0GHz

VSW Ron Input & O utput VSW R

P

1dB

IP

I

D

Isw Sw itching Speed 50% control to

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

Param eters: Test Conditions:
Z

=50 ohm s

0

(low loss state)

1dB Com pression at 0.5-2.0GH z V = -8V

Third O rder Intercep t V = -8V

3

Device Current uA 35

10% /90% R F

Product Features

• Fast Switching Speed : 3nsec

• HIgh LInearity : +47dBm IP3

• Ultra Low DC Power Consumption

• Low Insertion Loss : 0.7dB at 1GHz

• Low Cost Small Outline Plastic Package

Applications

• Digital Cellular

• Spread Spectrum

Units Min. Typ . M ax.

dB
f = 1.00-2.0GHz
f = 1.00-3.0GHz

f = 1.00-2.0GHz
f = 1.00-3.0GHz

f = 0.05-1.0GHz
f = 1.00-2.0GHz
f = 1.00-3.0GHz

V = -5V

V = -5V

7-21

dB

dB

dB

dB

dB

dBm
dBm

dBm
dBm

nsec 3

20
17

-

-

-

0.6

0.9

1.2
25

22
16

1.2:1

1.4:1

1.7:1
+31

+28
+50

+47

0.9

1.3

Switches

SSW-308 DC-3 GHz GaAs MMIC SPDT Switch

Absolute Maximum Ratings

Truth Table

RF Input Power 2W Max>500MHz
Control Voltage -10V
Operating Temperature -45Cto +85C
Storage Temperature -65C to +150C
Thermal Resistance 20 deg C/W

Switches

Pin Out

Pin Function

1V1
2J1
3GND
4V2
5J3
6GND
7GND
8J2

V1 V2 J1-J2 J1-J3

0 -5 Low Loss Isolat ion

-5 0 Isol ation Low Loss

Switch Schematic

Insertion Loss vs. Frequency

VControl = -5 V

0.0

-0.5

-1.0

dB

-1.5

-2.0
DC 1 2 3

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

GHz

On Port VSWR vs. Frequency

VControl = -5 V

2.0

1.8

1.6

1.4

1.2

1.0
DC 1 2 3

GHz

7-22