
Product Description
Stanford Microdevices SSW-224 is a high perfomance
Gallium Arsenide Field Effect Transistor MMIC switch
housed in a low-cost surface-mountable 8-pin ceramic
package.
This single-pole, double-throw, reflective switch consumes
less than 50uA and operates at -5V and 0V for control bias.
Its high isolation and low insertion loss makes it ideal for T/R
switching in analog and digital wireless communication
systems.
The die is fabricated using 0.5 micron FET process with
gold metallization and silicon nitride passivation to achieve
excellent performance and reliability.
Isolation vs. Frequency
-20
-30
-40
dB
-50
-60
-70
DC123456
VControl = -5 V
GHz
Preliminary
Preliminary
SSW-224
DC-6 GHz High Isolation
SPDT GaAs MMIC Switch
Product Features
High Isolation : 40dB at 2GHz, 30dB at 6GHz
Low DC Power Consumption
Broadband Performance - True DC Operation
Low Cost Surface-Mountable Ceramic Package
Applications
Analog/Digital Wireless System
Spread Spectrum
GPS
Electrical Specifications at Ta = 25C
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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
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zHG0.6-5.0=f
zHG0.6-5.0=f
FR%09/%01otlortnoc%05
1
zHG0.4-00.2=f
zHG0.6-50.4=f
zHG0.4-00.2=f
zHG0.6-00.4=f
zHG0.2-50.0=f
zHG0.4-00.2=f
zHG0.6-00.4=f
V5-=V
V8-=V
V5-=V
V8-=V
Bd
Bd
Bd
Bd
Bd
Bd
mBd
mBd
mBd
mBd
cesn3
73
03
72
http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085
7.0
1.1
5.1
74
04
53
51.1
52.1
05.1
62+
92+
54+
84+
EDS-101423 Rev A
1.1
5.1

SSW-224 DC-6.0 GHz GaAs MMIC Switches
Absolute Maximum Ratings
Preliminary
Preliminary
Operation of this device above any one of these
parameters may cause permanent damage.
Insertion Loss vs. Frequency
0.0
-0.5
-1.0
dB
-1.5
-2.0
DC123456
rewoPtupnIFRzHM005>xaMW2
egatloVlortnoCV01-
erutarepmeTgnitarepOC58+otC54-
erutarepmeTegarotSC051+otC56-
ecnatsiseRlamrehTW/Cged02
VControl = -5 V
GHz
dB
On Port Input/Output VSWR vs. Frequency
2.0
VControl = -5 V
1.8
1.6
1.4
1.2
1.0
DC 1 2 3 4 5 6
GHz
2
http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085
EDS-101423 Rev A

Caution ESD Sensitive:
Appropriate precautions in handling, packaging and
testing devices must be observed.
Switch Schematic
J2
J1
J3
.010 [.25]
60°
Package Dimensions
.050 [1.27]
.015 [.38]
.020 [.51] (8X)
Preliminary
Preliminary
SSW-224 DC-6.0 GHz GaAs MMIC Switches
Part Number Ordering Information
rebmuNtraPleeRrePseciveDeziSleeR
422-WSS005"7
Truth Table
1V2V2J-1J3J-1J
05-ssoLwoLnoitalosI
5-0 noitalosIssoLwoL
Part Symbolization
The part will be symbolized with a W2 designator
on the top surface of the package.
.096 [2.44]
7° MAX. TYP
.065 [1.65] (8X)
.030 [.76] TYP(8X)
.065 [1.65] REF
.010 [.25] REF
Pin Out
niPnoitcnuFnoitpircseD
1DNGdnuorG
21JniFR
3DNGdnuorG
4DNGdnuorG
52J1tuoFR
61V1lortnoC
72V2lortnoC
83J2tuoFR
DOT MARK
DENOTES
LOCATION
HEATSINK PLATE
.160 [4.06]
PIN 1
.010 [.25]
.010 [.25]
.140 [3.56]
W2
.200 [5.08]
.180 [4.57]
.200 [5.08] REF
.290 [7.37]
R.010 [.25] TYP
(4X)
.020 [.51]
.160 [4.06] REF
.035 [.89] TYP
(4X)
DIMENSIONS ARE IN INCHES [MM]
3
45° MAX. TYP(8X)
.140 [3.56] REF
HEATSINK PLATE
.008 [.20] (8X)
.036 [.91]
SEATING PLANE TO BE ±.002 FROM
HEATSINK PLATE BOTTOM.
http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085
EDS-101423 Rev A