Datasheet SSW-208 Datasheet (Stanford Microdevices)

Page 1
Product Description
SSW-208
Stanford Microdevices’ SSW-208 is a high perfomance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline
DC-4 GHz, High Isolation
plastic package.
GaAs MMIC SPDT Switch
This single-pole, double-throw, non-reflective switch consumes less than 50uA and operates at -5V and 0V for control bias. Its high isolation and low insertion loss makes it ideal for T/R switching in analog and digital wireless communication systems.
The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve
excellent performance and reliability.
Product Features
Isolation vs. Frequency
VControl = -5 V
-20
-30
-40
dB
-50
-60
-70 DC 1 2 3 4
GHz
Electrical Specifications at Ta = 25C
Symbol Parameters: Test Conditions Units Min. Typ. Max.
Ins Insertion Lo ss f = 0.05-1.0GHz
Isol Isolation f = 0.05-1.0GHz
VSW Ron Input & Output VSW R
P1dB Output Power at 1dB Compression
TO IP Th ird Or de r Inte rce p t Po int
Id Device Current uA 40
Isw Switching Speed
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
(on or low loss state)
f = 0.5-4.0GHz
f = 0.5-4.0GHz
50% control to 10% /90% RF
High Isolation: 22dB at 2GHz
Low DC Power Consumption
Low Insertion Loss: 0.9dB at 2GHz
Low Cost Small Outline Plastic Package
Applications
Analog/Digital Wireless System
Spread Spectrum
GPS
dB f = 1.00-2.0GHz f = 2.00-4.0GHz
f = 1.00-2.0GHz f = 2.00-4.0GHz
f = 0.05-1.0GHz f = 1.00-2.0GHz f = 2.00-4.0GHz
V = -5V V = -8V
V = -5V V = -8V
7-13
dB
dB
dB
dB
dB
dBm dBm
dBm dBm
nsec 3
25 20
0.8
0.9
1.4 40
30 25
1.15
1.25
1.50 +26
+29 +45
+48
1.3
1.4
Switches
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SSW-208 DC-6 GHz Absorptive SPDT GaAs Switch
Absolute Maximum Ratings
RF Input Power 2W M ax>500MHz Control Voltage -10V Oper ating
Temperature Storage
Temperature Thermal Resistance 20 deg C/W
-45C to +85C
-65C to +150C
Pin Out
Pin Function
1GND 2J1 3GND 4GND 5J2 6V1 7V2 8J3
Truth Table
V1 V2 J1-J2 J1-J3
0 -5 Low Loss Isolation
-5 0 Isolation Low Loss
Switch Schematic
Switches
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Insertion Loss vs. Frequency
VControl = -5 V
0.0
-0.5
-1.0
dB
-1.5
-2.0 DC1234
GHz
On Port Input/Output VSWR vs. Frequency
VControl = -5 V
2.0
1.8
1.6
1.4
1.2
1.0 DC1234
GHz
7-14
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