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Product Description
SSW-108
Stanford Microdevices’ SSW-108 is a high performance
Gallium Arsenide Field Effect Transistor MMIC switch
housed in a low-cost surface-mountable small outline
DC-4 GHz High Isolation
plastic package.
GaAs MMIC SPDT Switch
This single-pole, double-throw, non-reflective switch
consumes less than 50uA and operates at -5V and 0V for
control bias. Its high isolation and low insertion loss
makes it ideal for T/R switching in analog and digital
wireless communication systems.
The die is fabricated using 0.5 micron FET process with
gold metallization and silicon nitride passivation to achieve
excellent performance and reliability.
Product Features
Isolation vs. Frequency
VControl = -5 V
-20
-30
-40
dB
-50
-60
-70
DC 1 2 3 4
GHz
Electrical Specifications at Ta = 25C
Symbol Param eters: Test C onditions Units Min. Typ . M ax.
Ins Insertion Loss
Isol Isolation
VS WR on Input & Output V SWR
VS WR off Input & Outp ut VSW R
P1dB O utput Pow er at 1dB Com pression
T O IP T hird O rd e r Inte rc ep t P o int
Id D evice C urrent uA 40
Isw Switching S peed
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
(on or low loss state)
(off or isolated state)
f= 0.5-4.0GHz
f= 0.5-4.0GHz
50% contro l to 10% /90% RF
• High Isolation: 32dB at 2GHz
• Low DC Power Consumption
• Non-reflective
• Broadband Performance - T rue DC Operation
• Low Cost Small Outline Plastic Package
Applications
• Analog/Digital Wireless System
• Spread Spectrum
• GPS
f
= 0.05-1.0G Hz
f = 1.0-2.0GHz
f = 2.0-4.0GHz
f
= 0.05-1.0G Hz
f = 1.0-2.0GHz
f = 2.0-4.0GHz
f
= 0.05-1.0G Hz
f = 1.0-2.0GHz
f = 2.0-4.0GHz
f
= 0.05-1.0G Hz
f = 1.0-2.0GHz
f = 2.0-4.0GH
V = -5V
V = -8V
V = -5V
V = -8V
7-5
z
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
nsec 3
30
22
1.15
1.25
1.50
1.15
1.25
1.50
+26
+29
+45
+48
0.8
0.9
1.4
40
35
25
1.3
1.4
Switches
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SSW-108 DC-4 GHz Absorptive SPDT GaAs Switch
g
Absolute Maximum Ratings
RF Inpu t Power 2W Max>500M Hz
Control Voltage-10V
Operatin
Temperature
Storage
Temperature
Thermal Resistance 20 deg C/W
-45C to +85C
-65C to +150C
Pin Out
Pin Functi on
1GND
2J1
3GND
4GND
5J2
6V1
7V2
8J3
Truth Table
V1 V2 J1-J2 J1-J3
0 -5 Low Loss Isolation
-5 0 Isolation Low Loss
Switch Schematic
Switches
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Insertion Loss vs. Frequency
VControl = -5 V
0.0
-0.5
-1.0
dB
-1.5
-2.0
DC1234
GHz
On Port Input/Output VSWR vs. Frequency
VControl = -5 V
2.0
1.8
1.6
1.4
1.2
1.0
DC1234
GHz
7-6
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