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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SOT-23 Plastic-Encapsulate Transistors
SS8050LT1 TRANSISTOR (NPN)
FEATURES
Power dissipation
P
0.3 W ( Tamb=25℃)
CM:
Collector current
I
1.2 A
CM:
Collector-base voltage
V
: 40 V
(BR)CBO
Operating and storage junction temperature range
TJ, T
: -55℃ to +150℃
stg
SOT-23
1. BASE
2. EMI TTE R
3. COLLECTOR
Unit: mm
0
.
1
2. 4
1. 3
5
9
.
9
9
0
.
.
2
1
5
9
.
0
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
4
.
0
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V
V
V
(BR)CBO
Ic= 0.1mA, IB=0 25 V
(BR)CEO
(BR)EBO
I
CBO
I
CEO
V
I
EBO
h
V
FE(1)
Ic= 100µA, IE=0
I
=100µA, IC=0
E
V
=40V, IE=0 0.1
CB
V
=20V, IE=0 0.1
CB
= 5V, IC=0 0.1
EB
=1V, IC= 100mA 120 350
CE
40 V
5 V
µ
A
µ
A
µ
A
DC current gain
h
Collector-emitter saturation voltage
Base-emitter saturation voltag e
Transition frequency
V
FE(2)
VCE(sat) IC=800mA, IB= 80mA 0.5 V
VBE(sat) IC=800mA, IB= 80mA 1.2 V
f
T
=1V, IC= 800mA 40
CE
V
=6 V, IC= 20mA
CE
30MHz
f=
100 MHz
CLASSIFICATION OF h
FE
(1)
Rank L H
Range
120-200 200-350
DEVICE MARKING SS8050LT1=Y1
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SS8050LT1
0.5
0.4
0.3
0.2
0.1
[A], COLLECTOR CURRENT
C
I
0 0.4 0.8 1.2 1.6 2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
10000
1000
100
(sat)[mV], SATURATION VOLTAGE
CE
(sat), V
BE
10
V
0.1 1 10 100 1000
VBE(sat)
VCE(sat)
IC[mA], COLLECTOR CURRENT
IB = 3.0mA
IB = 2.5mA
IB = 2.0mA
IB = 1.5mA
IB = 1.0mA
IB = 0.5mA
IC = 10 I
1000
VCE = 1V
100
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10 100 1000
IC[mA], COLLECTOR CURRENT
100
B
10
1
[mA], COLLECTOR CURRENT
C
I
0.1
0.00.20.40.60.81.01.2
VCE = 1V
VBE[V], BASE-EMITTER VOLTAGE
1000
IE = 0
f = 1MHz
100
10
[pF], CAPACITANCE
ob
C
1
110100
VCB [V], COLLECTOR-BASE VOLTAGE
[MHz],
T
f
CURRENT GAIN BANDWIDTH PRODUCT
1000
VCE = 10V
100
10
1
1 10 100 400
IC[mA], COLLECTOR CURRENT
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