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polyfet rf devices
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
Total
Device
Dissipation
TM
t
ABSOLUTE MAXIMUM RATINGS ( T =
Junction to
Case Thermal
Resistance
o
50
Watts V
3.40
C/W
Maximum
Junction
Temperature
SQ202
SILICON GATE ENHANCEMENT MODE
RF POWER TRANSISTORVDMOS
Watts
10.0
Package Style
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
25 C )
Storage
Temperature
o
-65 C to 150 C200 C A V
DC Drain
Current
oo
3.0
Drain to
Gate
Voltage
70 V
Push - Pull
AQ
Drain to
Source
Voltage
70
Gate to
Source
Voltage
20
Gps
η
Bvdss
Idss
Igss
Vgs
Idsat
Ciss
Crss
Coss
RF CHARACTERISTICS (
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Load Mismatch ToleranceVSWR
10
40
10.0
WATTS OUTPUT )
dB
%
20:1 Relative
0.80
Idq = A, Vds = V, F =
Idq =
0.80
A, Vds = V, F =
Idq = 0.80
A, Vds = V, F =
28.0
28.0
28.0
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward TransconductancegM Vds = 10V, Vgs = 5V
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
65
0.4
1
1 7
0.6
2.00
2.80
20.0
1.2
12.0
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
20.00Ids = mA, Vgs = 0V
Vds =
Vds = 0V Vgs = 30V
Vgs = 20V, Ids = Rdson Saturation Resistance
Vgs = 20V, Vds = 10V
Vds =
Vds =
Vds =
28.0
0.04
V, Vgs = 0V
A, Vgs = VdsIds =
1.00
Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0
MHz
1,000
1,000
MHz
1,000
MHz
A
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 03/28/2001
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Id in amps; Gm in mhos
SQ202
POUT VS PIN GRAPH
SQ202 POUT VS PIN Freq=1000MHz, VDS=28V, Idq=.4A
16
14
12
10
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3 3.5 4
3
2.5
2
1.5
ID IN AMPS
1
Efficiency = 40%
PIN IN WATTS
S2A 2 DIE IV
Pout
14.00
13.00
12.00
11.00
10.00
9.00
8.00
7.00
6.00
5.00
CAPACITANCE VS VOLTAGE
100
10
1
0.1
0 5 10 15 20 25 30
S2A 2 DICE CAPACITANCE
Ciss
Coss
Crss
VDS IN VOLTS
ID & GM VS VGSIV CURVE
10.00
1.00
S2A 2 DIE ID & GM Vs VG
Id
gM
0.5
0
0 2 4 6 8 10 12 14 16 18 20
vg=2v Vg=4v Vg=6v vg=8v 0 vg=12v
VDS IN VOLTS
Zin Zout PACKAGE DIMENSIONS IN INCHES
0.10
0 2 4 6 8 10 12 14
Vgs in Volts
Tolerance .XX +/-0.01 .XXX +/-.005 inches
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
POLYFET RF DEVICES
REVISION 03/28/2001
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