Datasheet SPI11N60CFD Datasheet (INFINEON)

SPI11N60CFD

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Intrinsic fast-recovery body diode

• Extreme low reverse recovery charge

Type Package Pb-free

SPI11N60CFD PG-TO220 Yes

VDS @ T

Marking

11N60CFD

R

DS(on)

jmax

650 V

0.44 Ω

I

D

11 A

PG-TO262

Maximum Ratings

Parameter

Continuous drain current

= 25 °C

T

C

= 100 °C

T

C

Pulsed drain current, tp limited by T

jmax

Avalanche energy, single pulse

= 5.5 A, VDD = 50 V

I

D

Avalanche energy, repetitive tAR limited by T

jmax

1)

ID = 11 A, VDD = 50 V

Avalanche current, repetitive tAR limited by T

jmax

Reverse diode dv/dt

IS=11A, VDS=480V, Tj=125°C

Gate source voltage V

Gate source voltage AC (f >1Hz) V

Symbol Value Unit

I

D

A

11

7

I

D puls

E

AS

E

AR

I

AR

28

340 mJ

0.6

11 A

dv/dt 40 V/ns

GS

GS

±20

±30

V

Power dissipation, T

= 25°C P

C

Operating and storage temperature T

tot

j

125 W

,

T

stg

-55... +150

°C

2007-02-01Rev. 2.5 Page 1

Maximum Ratings

SPI11N60CFD

Parameter

Drain Source voltage slope

VDS = 480 V, ID = 11 A, Tj = 125 °C

Maximum diode commutation speed

VDS = 480 V, ID = 11 A, Tj = 125 °C

Symbol Value Unit

dv/dt 80 V/ns

diF/dt 600

Thermal Characteristics

Parameter

Thermal resistance, junction - case R

Thermal resistance, junction - ambient, leaded R

Soldering temperature, wavesoldering

Symbol Values Unit

thJC

thJA

T

sold

1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol Conditions Values Unit

A/µs

min. typ. max.

- - 1 K/W

- - 62

- - 260 °C

min. typ. max.

Drain-source breakdown voltage V

Drain-Source avalanche

V

breakdown voltage

Gate threshold voltage V

Zero gate voltage drain current I

Gate-source leakage current I

Drain-source on-state resistance R

Gate input resistance R

(BR)DSS

(BR)DS

GS(th)

DSS

GSS

DS(on)

G

VGS=0V, ID=0.25mA 600 - - V

VGS=0V, ID=11A - 700 -

ID=500µΑ, VGS=V

VDS=600V, VGS=0V,

=25°C,

T

j

=150°C

T

j

VGS=20V, VDS=0V - - 100 nA

VGS=10V, ID=7A,

=25°C

T

j

=150°C

T

j

f=1MHz, open Drain - 0.86 -

DS

3 4 5

-

-

-

-

1.1

900

0.38

1.02

0.44

µA

-

-

Ω

-

2007-02-01Rev. 2.5 Page 2

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified

(p

)

SPI11N60CFD

Parameter

Symbol Conditions Values Unit

Transconductance g

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Effective output capacitance,

2)

C

energy related

Effective output capacitance,

3)

C

time related

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

fs

iss

oss

rss

o(er)

o(tr)

d(on)

r

d(off)

f

VDS≥2*ID*R

=7A

I

D

VGS=0V, VDS=25V,

f=1MHz

VGS=0V,

=0V to 480V

V

DS

VDD=380V, VGS=0/10V,

=11A, RG=6.8Ω

I

D

DS(on)max

,

min. typ. max.

- 8.3 - S

- 1200 - pF

- 390 -

- 30 -

- 45 - pF

- 85 -

- 34 - ns

- 18 -

- 43 -

- 7 -

Gate Charge Characteristics

Gate to source charge

Gate to drain charge Q

Gate charge total Q

Gate plateau voltage V

1

Repetitve avalanche causes additional power losses that can be calculated as P

2

is a fixed capacitance that gives the same stored energy as C

C

o(er)

3

is a fixed capacitance that gives the same charging time as C

C

o(tr)

Q

gs

gd

g

lateau

VDD=480V, ID=11A - 9 - nC

VDD=480V, ID=11A,

=0 to 10V

V

GS

VDD=480V, ID=11A - 7 - V

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

- 23 -

- 48 64

AV=EAR

*f.

DSS

DSS

.

.

2007-02-01Rev. 2.5 Page 3

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

SPI11N60CFD

Parameter

Inverse diode continuous

Symbol Conditions Values Unit

I

S

forward current

Inverse diode direct current,

I

SM

pulsed

Inverse diode forward voltage V

Reverse recovery time t

Reverse recovery charge Q

Peak reverse recovery current I

Peak rate of fall of reverse

SD

rr

rr

rrm

dirr/dt

recovery current

Typical Transient Thermal Characteristics

Symbol

Value Unit Symbol Value Unit

min. typ. max.

TC=25°C - - 11 A

- - 28

VGS=0V, IF=I

VR=480V, IF=IS ,

/dt=100A/µs

di

F

S

- 1 1.2 V

- 140 - ns

- 0.7 - µC

- 11 - A

- 1200 - A/µs

Thermal resistance

R

th1

R

th2

R

th3

R

th4

R

th5

R

th6

P

tot

typ. typ.

Thermal capacitance

0.015 K/W

0.03

0.056

0.197

0.216

0.083

T

R

j T

th1

(t)

C

th1

C

th2

C

th1

C

th2

C

th3

C

th4

C

th5

C

th6

R

th,n

C

th,n

T

case

amb

External Heatsink

0.0001878

0.0007106

0.000988

0.002791

0.007285

0.063

Ws/K

2007-02-01Rev. 2.5 Page 4

SPI11N60CFD

1 Power dissipation

= f (TC)

P

tot

SPP11N60CFD

140

W

120

110

100

tot

90

P

80

70

60

50

40

30

20

10

0

0 20 40 60 80 100 120

°C

2 Safe operating area

= f ( VDS )

I

D

10

=25°C

C

1

10

2

V

3

10

V

DS

parameter : D = 0 , T

2

10

A

1

10

D

I

0

10

-1

10

-2

10

160

T

C

10

tp=0.001 ms
tp=0.01 ms
tp=0.1 ms
tp=1 ms
DC

0

3 Transient thermal impedance

= f (tp)

Z

thJC

10

/T

p

D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse

-6

10

-5

10

-4

-3

10

parameter: D = t

1

10

K/W

0

10

thJC

-1

10

Z

-2

10

-3

10

-4

10

-7

10

s

4 Typ. output characteristic

= f (VDS); Tj=25°C

I

D

parameter: t

40

A

30

D

25

I

20

15

10

5

-1

10

t

p

0

0 4 8 12 16 20 V 26

= 10 µs, V

p

Vgs = 20V
Vgs = 10V
Vgs = 9V
Vgs = 8.5V
Vgs = 8V
Vgs = 7.5V
Vgs = 7V
Vgs = 6.5V
Vgs = 6V

GS

V

DS

2007-02-01Rev. 2.5 Page 5

SPI11N60CFD

5 Typ. output characteristic

= f (VDS); Tj=150°C

I

D

parameter: t

22

A

18

16

14

D

I

12

10

8

6

4

2

0

0 4 8 12 16 20 V 26

= 10 µs, V

p

Vgs = 20V
Vgs = 8.5V
Vgs = 8V
Vgs = 7.5V
Vgs = 7V
Vgs = 6.5V
Vgs = 6V

GS

6 Typ. drain-source on resistance

R

parameter: T

V

DS

=f(ID)

DS(on)

=150°C, V

j

2

GS

Ω

1.8

1.7

1.6

DS(on)

1.5

R

1.4

1.3

1.2

1.1

1

0.9

0.8

0.7

0 4 8 12 16 20 A 28

Vgs = 6V
Vgs = 6.5V
Vgs = 7V
Vgs = 7.5V
Vgs = 8V
Vgs = 8.5V
Vgs = 20V

I

D

7 Drain-source on-state resistance

R

parameter : I

= f (Tj)

DS(on)

= 7 A, VGS = 10 V

D

SPP11N60CFD

2.6

Ω

2.2

2

1.8

DS(on)

1.6

R

1.4

1.2

1

0.8

0.6

0.4

0.2

0

-60 -20 20 60 100

98%

typ

°C

8 Typ. transfer characteristics

= f ( VGS ); VDS≥ 2 x ID x R

I

D

DS(on)max

parameter: tp = 10 µs

40

A

30

D

25

I

20

15

10

5

180

T

j

0

0 2 4 6 8 10 12 14 16 V 20

Tj = 25?C

Tj = 150?C

V

GS

2007-02-01Rev. 2.5 Page 6

SPI11N60CFD

9 Typ. gate charge

= f (Q

V

GS

parameter: I

SPP11N60CFD

16

V

0.2 V

12

0.8 V

GS

10

V

8

6

4

2

0

0 10 20 30 40 50

)

Gate

= 11 A pulsed

D

DS max

DS max

nC

Q

Gate

70

10 Forward characteristics of body diode

= f (VSD)

I

F

parameter: Tj , t

2

SPP11N60CFD

10

A

1

10

F

I

0

10

-1

10

0 0.4 0.8 1.2 1.6 2 2.4

p = 10 µs

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

V

3

V

SD

11 Avalanche SOA

= f (tAR)

I

AR

par.: T

≤ 150 °C

j

11

A

9

8

7

AR

I

6

5

4

3

2

1

0

10-310-210-110010110

T

j

(START)

=125°C

T

j

2

(START)

=25°C

µs

t

AR

10

12 Avalanche energy

= f (Tj)

E

AS

par.: I

4

= 5.5 A, VDD = 50 V

D

350

mJ

250

AS

E

200

150

100

50

0

20 40 60 80 100 120

°C

160

T

j

2007-02-01Rev. 2.5 Page 7

SPI11N60CFD

13 Drain-source breakdown voltage

V

(BR)DSS

(BR)DSS

V

= f (Tj)

SPP11N60CFD

720

V

680

660

640

620

600

580

560

540

-60 -20 20 60 100

°C

14 Avalanche power losses

= f (f )

P

AR

parameter: E

300

W

200

AR

P

150

100

50

0

180

T

j

10

4

=0.6mJ

AR

10

5

Hz

10

6

f

15 Typ. capacitances

C = f (V

parameter: V

10

pF

10

C

10

10

10

)

DS

=0V, f=1 MHz

GS

4

3

2

1

C

rss

0

0 100 200 300 400 V 600

16 Typ. C

=f(VDS)

E

oss

7.5

stored energy

oss

µJ

C

iss

6

5.5

5

oss

E

4.5

C

oss

V

DS

4

3.5

3

2.5

2

1.5

1

0.5

0

0 100 200 300 400 V 600

V

DS

2007-02-01Rev. 2.5 Page 8

SPI11N60CFD

17 Typ. reverse recovery charge

Qrr = f(TJ)

parameter: ID = 11A

1200

1100

1000

rr [nC]

Q

900

800

700

600

25 50 75 °C 125

18 Typ. reverse recovery charge

Qrr = f(ID)

parameter: di/dt = 100 A/µs

1200

1100

1000

900

rr [nC]

Q

800

700

600

500

400

300

200

1 2 3 4 5 6 7 8 9 A 11

T

j

Tj = 125°C

Tj = 25°C

I

D

19 Typ. reverse recovery charge

Qrr = f(di/dt)

parameter: ID = 11 A

1600

1500

Tj = 125°C

1400

1300

rr [nC]

Q

1200

1100

1000

900

800

700

600

100 200 300 400 500 600 700 A/µs 900

Tj = 25°C

di/dt

2007-02-01Rev. 2.5 Page 9

Definition of diodes switching characteristics

SPI11N60CFD

2007-02-01Rev. 2.5 Page 10

PG-TO-262-3-1

SPI11N60CFD

Rev. 2.5 Page 11

2007-02-01

SPI11N60CFD

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© Infineon Technologies AG 1999
All Rights Reserved.

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characteristics.

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regarding circuits, descriptions and charts stated herein.

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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
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2007-02-01Rev. 2.5 Page 12