Page 1
SMALL SIGNAL PNP TRANSISTOR
Type Marking
SOA56 2GT
■ SILICONEPITAXIALPLANAR PNP
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACE MOUNTING
CIRCUITS
■ MEDIUMCURRENT AFAMPLIFICATION
■ NPNCOMPLEMENTS ISSOA06
SOA56
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
P
T
Collector-Base Voltage (IE=0) -80 V
CBO
Collector-Emitter V oltage (IB=0) -80 V
CEO
Emitter-Base Voltage (IC=0) -4 V
EBO
Collect or Cur rent -0. 5 A
I
C
Total Dis sipation at Tc=25oC350mW
tot
Stora ge Temperature -65 to 150
stg
Max. O perating J unct i on Temperatu re 150
T
j
o
C
o
C
March 1996
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Page 2
SOA56
THERMAL DATA
R
• Mounted on a ceramic substrate area = 15 x15 x 0.5 mm
• Thermal Resistance Junction-Ambient Max 350
thj-amb
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
I
V
(BR) CEO
CBO
Collector C ut -off
Current (I
CEO
Collector C ut -off
Current (I
∗ Collector- E mitter
E
E
=0)
=0)
V
= -80 V -100 nA
CB
V
= -60 V -100 nA
CE
I
=-1mA -80 V
C
Break dow n V oltage
=0)
(I
B
V
(BR)EBO
Emitt er-Base
I
=-100µA-4V
E
Break dow n V oltage
=0)
(I
C
V
∗ Collector-Em it t er
CE(sat)
IC=-100mA IB=-10mA -0.25 V
Saturation Volta ge
∗ Base-Emitt er On
V
BE(on)
IC=-100mA VCE=-1V -1.2 V
Volt age
∗ DC Curr ent Gain IC=-10mA VCE=-1V
h
FE
f
∗
Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%
Tr ansition F requency IC=-10mA VCE= -2 V f = 100 MHz 50 MHz
T
=-100mA VCE=-1V
I
C
50
50
2/4
Page 3
SOT-23 MECHANICALDATA
SOA56
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.85 1.1 33.4 43.3
B 0.65 0.95 25.6 37.4
C 1.20 1.4 47.2 55.1
D 2.80 3 110.2 118
E 0.95 1.05 37.4 41.3
F 1.9 2.05 74.8 80.7
G 2.1 2.5 82.6 98.4
H 0.38 0.48 14.9 18.8
L 0.3 0.6 11.8 23.6
M 0 0.1 0 3.9
N 0.3 0.65 11.8 25.6
O 0.09 0.17 3.5 6.7
mm mils
0044616/B
3/4
Page 4
SOA56
Information furnished is believedto be accurate and reliable. However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequencesof use ofsuch information nor for anyinfringement of patentsor other rights of third parties which may resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patent or patentrights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice.This publication supersedes andreplaces all information previously supplied.
SGS-THOMSONMicroelectronics productsare notauthorizedfor useascriticalcomponents in life supportdevices or systemswithoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1995 SGS-THOMSONMicroelectronics- Printedin Italy- All Rights Reserved
Australia- Brazil - Canada- China- France- Germany- Hong Kong- Italy- Japan- Korea - Malaysia- Malta- Morocco- TheNetherlands -
Singapore- Spain- Sweden- Switzerland- Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSONMicroelectronicsGROUP OF COMPANIES
.
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