Page 1
SMALL SIGNAL NPN TRANSISTOR
Type Marking
SOA06 1GT
■ SILICONEPITAXIALPLANAR NPN
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACE MOUNTING
CIRCUITS
■ MEDIUMCURRENT AF AMPLIFICATION
■ PNP COMPLEMENTS IS SOA56
SOA06
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
P
T
Collector-Base Voltage (IE=0) 80 V
CBO
Collector-Emitter Voltage (IB=0) 80 V
CEO
Emitter-Base Voltage (IC=0) 4 V
EBO
Collect or Current 0.5 A
I
C
Total Dissipati on at Tc=25oC350mW
tot
Stora ge Tem perat ure -65 to 150
stg
Max. Operati ng Junct ion Temperature 150
T
j
o
C
o
C
March 1996
1/4
Page 2
SOA06
THERMAL DATA
R
• Mounted on a ceramic substrate area = 15 x15 x 0.5mm
• Thermal Resistance Junction-Ambient Max 350
thj- amb
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
I
V
(BR) CEO
CBO
Collector C ut -off
Current (I
CEO
Collector C ut -off
Current (I
∗ Collector- E mitt er
E
E
=0)
=0)
V
=80V 100 nA
CB
V
=60V 100 nA
CE
I
=1mA 80 V
C
Break dow n Voltage
=0)
(I
B
V
(BR)EBO
Emitt er-Base
I
=100µA4V
E
Break dow n Voltage
=0)
(I
C
V
∗ Collector-Emitt er
CE(sat)
IC=100mA IB=10mA 0.25 V
Saturation Voltage
∗ Base-Emitt er O n
V
BE(on)
IC=100mA VCE=1V 1.2 V
Volt age
∗ DC C ur rent G ain IC=10mA VCE=1V
h
FE
f
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%
Tr ansition F requency IC=10mA VCE=2V f=100MHz 100 MHz
T
=100mA VCE=1V
I
C
50
50
2/4
Page 3
SOT-23 MECHANICAL DATA
SOA06
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.85 1.1 33.4 43.3
B 0.65 0.95 25.6 37.4
C 1.20 1.4 47.2 55.1
D 2.80 3 110.2 118
E 0.95 1.05 37.4 41.3
F 1.9 2.05 74.8 80.7
G 2.1 2.5 82.6 98.4
H 0.38 0.48 14.9 18.8
L 0.3 0.6 11.8 23.6
M 0 0.1 0 3.9
N 0.3 0.65 11.8 25.6
O 0.09 0.17 3.5 6.7
mm mils
0044616/B
3/4
Page 4
SOA06
Information furnished is believed tobe accurate andreliable.However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequencesof use of such informationnor for anyinfringement of patents or otherrights ofthirdparties which may resultsfrom its use. No
licenseisgranted byimplicationorotherwise underany patentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publicationare subjecttochange without notice.This publication supersedes andreplacesall informationpreviously supplied.
SGS-THOMSONMicroelectronics productsarenot authorizedforuseas criticalcomponents inlifesupportdevicesor systems withoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1995 SGS-THOMSONMicroelectronics - Printedin Italy - All Rights Reserved
Australia- Brazil - Canada- China - France- Germany- HongKong- Italy- Japan- Korea- Malaysia- Malta - Morocco- TheNetherlands -
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.
4/4
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