Datasheet P1087, P1086, SMPP1086, SMPP1087 Datasheet (Interfet)

01/99 B-63

P1086, P1087

P-Channel Silicon Junction Field-Effect Transistor

Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage 30 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C

TOÐ226AA Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate

Surface Mount

SMPP1086, SMPP1087

At 25°C free air temperature: P1086 P1087 Process PJ99
Static Electrical Characteristics Min Max Min Max Unit Test Conditions

Gate Source Breakdown Voltage V

(BR)GSS

30 30 V IG= 1 µA, VDS= ØV

Gate Reverse Current I

GSS

22nAV

GS

= 15V, VDS= ØV

Gate Source Cutoff Voltage V

GS(OFF)

10 5 V VDS= – 15V, ID= – 1 µA

Saturation Drain Current (Pulsed) I

DSS

– 10 – 5.0 mA VDS= – 20V, VGS= ØV

Drain Cutoff Current I

D(OFF)

– 10 – 10 nA VDS= – 15V, VGS= 12V (P1086)

– 0.5 – 0.5 µA VGS= 7V (P1087) TA= 85°C

Drain Reverse Current I

DGO

22nAV

DG

= – 15V, IS= ØA

0.1 0.1 µA VDG= – 15V, IS= ØA TA= 85°C

Drain Source ON Voltage V

DS(ON)

– 0.5 – 0.5 V VGS= ØV, ID= – 6 mA (P1086)
– 0.5 – 0.5 V VGS= ØV, ID= – 3 mA (P1087)

Static Drain Source ON Resistance r

DS(ON)

75 150 Ω ID= – 1 mA, VGS= ØV

Dynamic Electrical Characteristics

Drain Source ON Resistance r

ds(on)

75 150 Ω ID= Ø, VGS= ØV f = 1 kHz

Common Source Input Capacitance C

iss

45 45 pF VDS= – 15V, VGS= ØV f = 1 kHz

Common Source

C

rss

10 10 pF

V

DS

= ØV, VGS= 12V (P1086)

f = 1 MHz

Reverse Transfer Capacitance

10 10 pF

V

DS

= ØV, VGS= 7V (P1087)

Switching Characteristics

VDD= – 6 V, V

GS(ON)

= Ø V

Turn ON Delay Time td

(on)

15 15 ns

P1086 P1087

Rise Time t

r

20 75 ns

V

GS(OFF)

12 7 V

Turn OFF Delay Time td

(off)

15 25 ns

V

D(ON)

– 6 – 3 MA

Fall Time t

f

50 100 ns R

L

910 1.8K Ω

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Databook.fxp 1/13/99 2:09 PM Page B-63