Datasheet J309, J308, SMPJ308, SMPJ309 Datasheet (Interfet)

01/99 B-61

J308, J309

N-Channel Silicon Junction Field-Effect Transistor

Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C

TOÐ226AA Package

Dimensions in Inches (mm)

Pin Configuration

1 Drain, 2 Source, 3 Gate

Surface Mount

SMPJ308, SMPJ309

At 25°C free air temperature:

J308 J309 Process NJ72

Static Electrical Characteristics

Min Typ Max Min Typ Max Unit Test Conditions

Gate Source Breakdown Voltage V

(BR)GSS

– 25 – 25 V IG= – 1µA, VDS= ØV

Gate Reverse Current I

GSS

– 1 – 1 nA VGS= – 15V, VDS= ØV
– 1 – 1 µA VGS= – 15V, VDS= ØV TA= +125°C

Gate Source Cutoff Voltage V

GS(OFF)

– 1 – 6.5 – 1 – 4 V VDS= 10V, ID= 1 nA

Gate Source Forward Voltage V

GS(F)

11VV

DS

= ØV, IG= 1 mA

Drain Saturation Current (Pulsed) I

DSS

12 60 12 30 mA VDS= 10V, VGS= ØV

Dynamic Electrical Characteristics

Common Source Forward Transconductance g

fs

8000 17000 10000 17000 µS VDS= 10V, ID= 10 mA f = 1 kHz

Common Source Output Conductance g

os

250 250 µS VDS= 10V, ID= 10 mA f = 1 kHz

Common Gate Forward Transconductance g

fg

13000 13000 µS VDS= 10V, ID= 10 mA f = 1 kHz

Common Gate Output Transconductance g

og

150 100 µS VDS= 10V, ID= 10 mA f = 1 kHz

Gate Drain Capacitance C

dg

1.8 2.5 1.8 2.5 pF VDS= ØV, VGS= – 10V f = 1 MHz

Gate Source Capacitance C

gs

45 45pFVDS= ØV, VGS= – 10V f = 1 MHz

Equivalent Short Circuit

¯e

N

10 10

nV/√Hz

VDS= 10V, ID= 10 mA f = 100 kHz

Input Noise Voltage
Common Source Forward

Re

(Yfs)

12 12 µS VDS= 10V, ID= 10 mA f = 105 MHz

Transconductance
Common Gate Input Conductance Re

(Yig)

14 14 µS VDS= 10V, ID= 10 mA f = 105 MHz

Common Source Input Conductance Re

(Yis)

0.4 0.4 µS VDS= 10V, ID= 10 mA f = 105 MHz

Common Source Output Conductance Re

(Gos)

0.15 0.15 µS VDS= 10V, ID= 10 mA f = 105 MHz

Common Gate Power Gain

G

pg

16 16 dB VDS= 10V, ID= 10 mA f = 105 MHz

at Noise Match

11 11 dB V

DS

= 10V, ID= 10 mA f = 450 MHz

Noise Figure NF

1.5 1.5 dB V

DS

= 15V, ID= 10 mA f = 105 MHz

2.7 2.7 dB VDS= 15V, ID= 10 mA f = 450 MHz

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Databook.fxp 1/13/99 2:09 PM Page B-61