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J232
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 40 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ232
At 25°C free air temperature: J232 Process NJ16
Static Electrical Characteristics Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
– 40 V IG= – 1 µA, VDS= ØV
Gate Reverse Current I
GSS
– 250 pA VGS= – 30V, VDS= ØV
Gate Operating Current I
G
– 2 pA VDS= 20V, ID= ØV
Gate Source Cutoff Voltage V
GS(OFF)
– 3 – 6 V VDS= 20V, ID= 1 µA
Drain Saturation Current (Pulsed) I
DSS
510mAV
DS
= 20V, VGS= ØV
Dynamic Electrical Characteristics
Common Source Forward Transconductance g
fs
2500 5000 µS VDS= 20V, VGS= ØV f = 1 kHz
Common Source Output Conductance g
os
5µSV
DS
= 20V, VGS= ØV f = 1 kHz
Common Source Input Capacitance C
iss
4pFV
DS
= 20V, VGS= ØV f = 1 MHz
Common Source Reverse Transfer
C
rss
1
pF
VDS= 20V, VGS= ØV f = 1 MHz
Capacitance
Equivalent Short Circuit
¯e
N
20 30 nV/√Hz VDS= 10V, VGS= ØV f = 10 Hz
Input Noise Voltage
6 nV/√Hz VDS= 10V, VGS= ØV f = 1 kHz
¥ Audio Amplifier
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-59
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