SM9103M
NIPPON PRECISION CIRCUITS—7
Tracking Signal Processor Characteristics
VCC = 5 V ± 5%, GND = 0 V, Ta = 0 to 70 °C
Parameter Condition
Rating
Unit
min typ max
TSUB current-to-voltage converter
coefficient
1
RAM read
Rf = 18 kΩ,
V
OUT
= V
REF
± 0.8 V
10.64 11.95 13.26
k
Ω
ROM read 2.67 2.99 9.92
RAM write 1.78 1.99 2.20
TADD current-to-voltage converter
coefficient
2
RAM read
R
f
= 47 kΩ
27.82 31.25 34.68
kΩROM read 6.95 7.80 8.65
RAM write 4.63 5.20 5.77
DPDA, DPDB, DPDC, DPDD
current-to-voltage converter coefficient
3
RAM read 40.0 50.0 60.0
kΩ
ROM read 10.0 12.5 15.0
T1, T2, T3, T4 converter coefficient
relative error
TSUB output, RAM/ROM read – – ±2 %
TSUB, T ADD, DPDA, DPDB, DPDC,
DPDD output impedance
– – 100 Ω
TSUB operating output voltage 10 kΩ load connected to VREF 1 – 3 V
TAD D, DPDA, DPDB, DPDC, DPDD
operating output voltage
10 kΩ load connected to VREF V
REF
–3V
Converter coefficient switching time
RAM read ↔ ROM read – – 10 ms
RAM write ↔ RAM read – – 3 µs
TSUB, T ADD signal bandwidth
4
DC to −3 dB frequency 1 – – MHz
DPDA, DPDB, DPDC, DPDD signal
bandwidth
4
f = 100 kHz to −3 dB frequency 5 – – MHz
TSUB, T ADD gain peaking
4
f = 10 kHz to −3 dB frequency −3 – +0.5 dB
DPDA, DPDB, DPDC, DPDD gain
peaking
4
f = 100 kHz to −3 dB frequency −3 – +4.0 dB
TSUB phase response
4
@ f = 100 kHz – – 10 °
DPDA, DPDB, DPDC, DPDD group
delay
4
f = 1 to 5 MHz group delay differential
absolute value
––5
ns
Relative error between 4 pins – – 1.0
TSUB offset voltage
No input signal,
V
REF
reference,
post-correction,
Ta = 25°C,
Rf = 18 kΩ
RAM read/write max
gain
– – ±10.0
mV
RAM read, min to max
gain
– – ±26
RAM read/write
differential gain max.
––±4
ROM read,
gain min/max
– – ±100
TADD offset voltage
No input signal,
V
REF
reference
RAM read – – ±30
mV
ROM read – – ±300
DPDA, DPDB, DPDC, DPDD offset
voltage
No input signal,
V
REF
reference
RAM/ROM read −550 – +50 mV
TSUB offset voltage temperature
coefficient
R
f
= 18 kΩ – – ±0.4 mV/°C
TSUB variable gain range −16 – +14 dB
TSUB variable gain step width – 2 – dB