Datasheet SLVE2.8.TC, SLVG2.8.TC Datasheet (Semtech Corporation)

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PROTECTION PRODUCTS
1
www.semtech.com
PROTECTION PRODUCTS
SLVE2.8 & SLVG2.8
EPD TVS
™ Diodes For
Description
Features
Schematic & Pin Configuration Schematic & PIN Configuration
Revision 1/18/2001
The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electro­static discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges.
The devices are constructed using Semtech’s propri­etary EPD process technology. The EPD process pro­vides low standoff voltages with significant reductions in leakage currents and capacitance over silicon­avalanche diode processes. The SLVE2.8 & SLVG2.8 are in a SOT-143 package and have a low 2.8V work­ing voltage. They may be used to protect one line in differential or common mode. The “flow-thru” design minimizes trace inductance and reduces voltage overshoot associated with ESD events.
The SLV is specifically designed to protect low voltage components such as Ethernet transceivers, laser diodes, ASICs, and high-speed RAM. The low clamping voltage of the SLV minimizes the stress on the pro­tected IC.
The SLV series T VS diodes will exceed the surge re­quirements of IEC 61000-4-2, Level 4.
Applications
Mechanical Characteristics
! ESD and Latch-up Protection ! Analog Inputs ! WAN/LAN Equipment ! Low Voltage ASICs ! Desktops, Servers, Notebooks & Handhelds ! Portable Instrumentation ! Base Stations ! Laser Diode Protection
! 300 Watts peak pulse power (tp = 8/20µs) ! Transient protection for low voltage data lines to
IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) IEC 61000-4-5 (Lightning) 24A (tp = 8/20µs)
! Protects one line ! Comprehensive pin out for easy board layout ! Low capacitance ! Low leakage current ! Low operating and clamping voltages ! Solid-state EPD TVS process technology
! JEDEC SOT-143 package ! Molding compound flammability rating: UL 94V-0 ! Marking : Marking code ! Packaging : Tape and Reel per EIA 481
SLVE2.8 (Top View)
1
2
3
4
1
2
3
4
SLVG2.8 (Top View)
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2 2001 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
PROTECTION PRODUCTS
SLVE2.8 & SLVG2.8
Absolute Maximum Rating
Electrical Characteristics
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I
TP
Aµ2=0.3V
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I
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Page 3
3 2001 Semtech Corp.
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PROTECTION PRODUCTS
SLVE2.8 & SLVG2.8
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
0
10
20
30
40
50
60
70
80
90
100
110
0 25 50 75 100 125 150
Ambient Temperature - T
A
(oC)
% of Rated Power or I
PP
Power Derating Curve
Pulse Waveform Clamping Voltage vs. Peak Pulse Current
0
10
20
30
40
50
60
70
80
90
100
110
0 5 10 15 20 25 30
Time (µµµµs)
Percent of I
PP
e
-t
td = IPP/2
Waveform
Parameters:
tr = 8µs
td = 20µs
0.01
0.1
1
10
0.1 1 10 100 1000
Pulse Duration - tp (µµµµs)
Peak Pulse Power - P
PP
(kW)
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30 35
Peak Pulse Current - I
PP
(A)
Clamping Voltage - V
C
(V)
SLVG2.8
SLVE2.8
Waveform
Parameters:
tr = 8µs
td = 20µs
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4 2001 Semtech Corp.
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PROTECTION PRODUCTS
PROTECTION PRODUCTS
SLVE2.8 & SLVG2.8
Circuit Diagrams
Common Mode Protection (SLVE2.8 & SLVG2.8)
Device Connection
Electronic equipment is susceptible to transient distur­bances from a variety of sources including: ESD to an open connector or interface, direct or nearby lightning strikes to cables and wires, and charged cables “hot plugged” into I/O ports. The SLV series is designed to protect sensitive components from damage and latch­up which may result from such transient events. The SLVG2.8 is designed to protect one unidirectional line while the SLVE2.8 is designed to protect one bidirec­tional line (or two differential lines). The options for connecting the devices are as follows:
" SLVE2.8: Common mode protection of one bidirec-
tional data line is achieved by connecting the data line input/output at pins 2 and 3. Pins 1 and 4 are connected to ground. For differential protection, pins 1 & 4 can be connected to a second I/O line. For best results, the ground connection should be made directly to a ground plane on the board. The path length should be kept as short as possible to minimize parasitic inductance.
" SLVG2.8: Common mode protection of one unidi-
rectional line is achieved by connecting the line to be protected at pins 2 & 3. Pins 1 & 4 are con­nected to ground. For best results, the ground connection should be made directly to a ground plane on the board. The path length should be kept as short as possible to minimize parasitic inductance.
Circuit Board Layout Recommendations for Suppres­sion of ESD.
Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended:
" Place the TVS near the input terminals or connec-
tors to restrict transient coupling.
" Minimize the path length between the TVS and the
protected line.
" Minimize all conductive loops including power and
ground loops.
" The ESD transient return path to ground should be
kept as short as possible.
" Never run critical signals near board edges. " Use ground planes whenever possible.
1
2
3
4
Line In
Line Out
1
2
3
4
Line 2 In
Line 2 Out
Line 1 In
Line 1 Out
Differential Mode Protection (SLVE2.8 only)
1
2
3
4
1
2
3
4
SLVG2.8 SLVE2.8
Applications Information
Page 5
5 2001 Semtech Corp.
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PROTECTION PRODUCTS
SLVE2.8 & SLVG2.8
Applications Information (continued)
I
PP
I
SB
I
PT
I
R
V
RWMVVPTVC
V
BRR
I
BRR
SB
EPD TVS VI Characteristic Cur ve
EPD TVS
Characteristics
The SLV series is constructed using Semtech’s propri­etary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, the SLVE2.8 & SLVG2.8 can effectively operate at 2.8V while maintaining excellent electrical characteristics.
The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in tradi­tional silicon-avalanche TVS diodes. The EPD mecha­nism is achieved by engineering the center region of the device such that the reverse biased junction does not avalanche, but will “punch-through” to a conduct­ing state. This structure results in a device with supe­rior dc electrical parameters at low voltages while maintaining the capability to absorb high transient currents.
The IV characteristic curve of the EPD device is shown in Figure 1. The device represents a high impedance to the circuit up to the working voltage (V
RWM
). During a transient event, the device will begin to conduct as it is biased in the reverse direction. When the punch­through voltage (VPT) is exceeded, the device enters a low impedance state, diverting the transient current away from the protected circuit. When the device is conducting current, it will exhibit a slight “snap-back” or negative resistance characteristic due to its structure. This must be considered when connecting the device to a power supply rail. To return to a non-conducting state, the current through the device must fall below the snap-back current (approximately < 50mA).
Page 6
6 2001 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
PROTECTION PRODUCTS
SLVE2.8 & SLVG2.8
Land Pattern - SOT-143
Notes: (1) Controlling dimension: Millimeters. (2) Dimension A and B do not include mold protrusions. Mold protrusions are .006” max.
Outline Drawing - SOT-143
Page 7
7 2001 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
SLVE2.8 & SLVG2.8
Contact Information
Semtech Corporation
Protection Products Division
652 Mitchell Rd., Newbury Park, CA 91320
Phone: (805)498-211 1 FAX (805)498-3804
Marking Codes
Ordering Information
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CT.8.2EVLSV8.2000,3hcnI7 CT.8.2GVLSV8.2000,3hcnI7
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8.2EVLS8.2E
8.2GVLS8.2G
Note: Consult factory for availability of 13” reelsNote: Consult factory for availability of 13” reels
Note: Consult factory for availability of 13” reelsNote: Consult factory for availability of 13” reels
Note: Consult factory for availability of 13” reels
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