Datasheet SL74LVU04, SL74LVU04D, SL74LVU04N Datasheet (SLS)

Page 1
TECHNICAL DATA
Semiconductor
1
Hex Inverter
The 74LVU04 is a low -voltage, Si-gate CMOS device and is pin
compatible with the 74HCU04.
The 74LVU04 is a general purpose hex inverter. Each of the six
inverters is a single stage with unbuffered outputs.
Wide Operating Voltage: 1.0÷5.5 V
Optimized for Low Voltage applications: 1.0÷3.6 V
Accepts TTL input levels between VCC =2.7 V and VCC =3.6 V
Low Input Current
SL74LVU04
N SUFFIX PLASTIC
14
1
14
ORDERING INFORMATION
SL74LVU04N Plastic SL74LVU04D SOIC SL74LVU04 Chip
TA = -40° ÷ 125° C for all packages
D SUFFIX SOIC
LOGIC DIAGRAM
PIN 14 =VCC
PIN 7 = GND
PIN ASSIGNMENT
FUNCTION TABLE
Input Output
A Y
L H
H L
SLS
System Logic
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Page 2
SL74LVU04
Semiconductor
MAXIMUM RATINGS
*
Symbol Parameter Value Unit
VCC DC supply voltage (Referenced to GND) -0.5 ÷ +7.0 V
IIK *1 DC input diode current ±20 mA
IOK *2 DC output diode current ±50 mA
IO *3 DC output source or sink current
±25 mA
-bus driver outputs
ICC DC VCC current for types with
±50 mA
- bus driver outputs
I
DC GND current for types with
GND
±50 mA
- bus driver outputs
PD Power dissipation per package, plastic DIP+
SOIC package+
750 500
Tstg Storage temperature -65 ÷ +150 °C
TL Lead temperature, 1.5 mm from Case for 10 se conds
260 °C
(Plastic DIP ), 0.3 mm (SOIC Package)
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 12 mW/°C from 70° to 125°C
SOIC Package: : - 8 mW/°C from 70° to 125°C
*1: VI < -0.5V or V
> VCC+0.5V
I
*2: Vo < -0.5V or Vo > VCC+0.5V *3: -0.5V < Vo < VCC+0.5V
mW
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
VCC DC Supply Voltage (Referenced to GND) 1.0 5.5 V
VIN, V
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and V V
)VCC.
OUT
outputs must be left open.
DC Input Voltage, Output Voltage (Referenced
OUT
0 VCC V
to GND)
TA Operating Temperature, All Package Types -40 +125 °C
tr, tf Input Rise and Fall Time 1.0 V ≤VCC <2.0 V
2.0 V ≤VCC <2.7 V
2.7 V ≤VCC <3.6 V
3.6 V ≤VCC 5.5 V
0 0 0 0
500 200 100
50
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric
should be constrained to the range GND≤(VIN or
OUT
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused
SLS
System Logic
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Page 3
Semiconductor
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
SL74LVU04
VIH High-Level
Input Voltage
VIL Low -Level
Input Voltage
VOH High-Level
Output Vol tage
Test
Conditions
VCC,
V
1.2
2.0
2.7
3.0
3.6
4.5
5.5
1.2
2.0
2.7
3.0
3.6
4.5
5.5
VI = V I0=-100 ìA
IH or VIL
1.2
2.0
2.7
3.0
3.6
4.5
5.5
Guaranteed Limit
25°C -40°C ÷ 85°C -40°C ÷ 125°C Symbol Parameter
min max min max min max
1.0
1.6
2.4
2.4
2.4
3.6
4.4
-
-
-
-
-
-
-
1.05
1.85
2.55
2.85
3.45
4.35
5.35
1.0
0.2
0.4
0.5
0.5
0.5
0.9
1.1
-
-
-
-
-
-
-
1.6
2.4
2.4
2.4
3.6
4.4
-
-
-
-
-
-
-
1.0
1.8
2.5
2.8
3.4
4.3
5.3
0.2
0.4
0.5
0.5
0.5
0.9
1.1
-
-
-
-
-
-
-
1.0
1.6
2.4
2.4
2.4
3.6
4.4
-
-
-
-
-
-
-
1.0
1.8
2.5
2.8
3.4
4.3
5.3
V
0.2
0.4
0.5
0.5
0.5
0.9
1.1
-
-
-
-
-
-
-
Unit
V
V
VOL Low-Level
Output Vol tage
VI = V I0=-6.0 mA
VI = V I0=-12 mA
VI = V I0=100 ìA
VI = V
IH or VIL
IH or VIL
IH or VIL
IH or VIL
3.0 2.48 - 2.40 - 2.20 -
4.5 3.70 - 3.60 - 3.50 -
1.2
2.0
2.7
3.0
3.6
4.5
5.5
3.0
-
-
-
-
-
-
-
- 0.33
I0=6.0 mA VI = V
IH or VIL
4.5
- 0.40
I0=12 mA
IIL Low-Level
VI=0 V 5.5 - -0.1 - -1.0 - -1.0 ìA Input Leakage Current
DC ELECTRICAL CHARACTERISTICS (continuation)
Conditions
VCC,
25°C -40°C ÷ 85°C -40°C ÷ 125°C
0.15
0.15
0.15
0.15
0.15
0.15
0.15
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
-
-
-
-
-
-
-
- 0.40 - 0.50
- 0.55 - 0.65
Guaranteed Limit Symbol Parameter Test
0.2
0.2
0.2
0.2
0.2
0.2
0.2
V
Unit
SLS
System Logic
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Page 4
SL74LVU04
Semiconductor
IIH High-Level
VI= VÑÑ 5.5 - 0.1 - 1.0 - 1.0
V
Input Leakage Current
ICC Quiescent
Supply Current (per Package)
I
Additional
CC1
Quiescent
VI=0 Â or V
IO = 0 ìA
VI = V
- 0.6V 2.7
ÑÑ
5.5 - 4.0 - 20 - 40 ìA
ÑÑ
3.6 Supply Current on input
AC ELECTRICAL CHARACTERISTICS (C
VCC
V
1.2
2.0
2.7
3.0
4.5
PHL
(t
Propagation
PLH)
Delay, Input A to Output Y (Figure 1 )
Test
Conditions
VI=0 V or V
1
tLH = tHL =2.5 ns ÑL = 50 pF RL = 1 kÙ
min max min max min max
-
-
0.2
0.2
-
-
0.5
0.5
-
0.85
-
0.85
-
=50 pF, tLH =tHL = 2.5 ns, RL=1 kÙ)
L
Guaranteed Limit
25°C -40°C ÷ 85°C -40°C ÷ 125°C Symbol Parameter
Min max min max min max
-
-
-
-
-
70 22 16 13 11
-
-
-
-
-
80 26 19 15 13
-
100
-
-
-
-
31 23 18 16
mA
Unit
ns
CI Input
5.5
Capacitance
Used to determine the no-load dynamic power consumption: P
= CPDV
D
(CLV
fI+ (CLV
CC
fo) – sum of the outputs
CC
fo), fI - input frequency, fo - output frequency (MHz)
CC
- 7.0 - - - -
ÒÀ=25°Ñ, VI=0V or VCC pF CPD Power Dissipation Capacitance (Per Inverter)
36
pF
SLS
System Logic
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Page 5
SL74LVU04
Semiconductor
GENERATOR
PULSE
Input À
Output Y
VX=0.5 VCC
0.1
t
H L
0.9
V
X
t
P HL
V
Y
0.9
t
L H
V
V
X
0.1
t
P L H
V
Y
GND
V
V
OH
OL
Figure 1. Switching Waveforms
V
CC
V
I
DEVICE
UNDER
R
TEST
T
V
C
L
Termination resistance RT – should be equal to Z
R
L
of pulse generators
OUT
Figure 2. Test circuit
SLS
System Logic
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Page 6
Semiconductor
1.42 0.03
±
1.33 0.03
±
CHIP PAD DIAGRAM SL74LVU04
SL74LVU04
13
12
11
10
14
01
02
03
Chip marking
IN74LVU04
(x=0.130; y=0.130
Pad size 0.108 x 0.108 mm (Pad size is given as per metallization layer) Thickness of chip 0.46 ± 0,02 mm
04 05 06
)
09
08
07
PAD LOCATION
Pad No Symbol X Y
01 A1 0.130 0.463 02 Y1 0.130 0.230 03 A2 0.381 0.126 04 Y2 0.616 0.126 05 A3 0.881 0.126 06 Y3 1.116 0.126 07 GND 1.115 0.631 08 Y4 1.115 0.846 09 A4 1.115 1.181 10 Y5 0.804 1.194 11 A5 0.569 1.194 12 Y6 0.378 1.194 13 A6 0.143 1.194 14 VCC 0.130 0.813
SLS
System Logic
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