Datasheet SL560CCM, SL560CDP Datasheet (GEC Plessey Semiconductors)

THIS DOCUMENT IS FOR MAINTENANCE

PURPOSES ONLY AND IS NOT

RECOMMENDED FOR NEW DESIGNS

SL560

300MHz LOW NOISE AMPLIFIER

This monolithic circuit contains three very high performance
transistors and associated biasing components in an eight­lead TO-5 package forming a 300MHz low noise amplifier. The
configuration employed permits maximum flexibility with
minimum use of external components. The SL560C is a
general purpose low noise, high frequency gain block.

The device is also available as the SL560AC which has
guaranteed operation over the fully Military Temperatures
Range and is screened to MIL-STD-883 Class B. Data is
available separately.

FEATURES

■ Gain up to 40dB

■ Noise Figures less than 2dB (Rs 200 ohm)

■ Bandwidth 300MHz

■ Supply Voltage 2-15V (Depending on Configuration)

■ Low Power Consumption

APPLICATIONS

■ Radar IF Preamplifiers

■ Infra-Red Sysems Head Amplifiers

■ Amplifiers in Noise Measurement Systems

■ Low Power Wideband Amplifiers

■ Instrumentation Preamplifiers

■ 50 ohm Line Drivers

■ Wideband Power Amplifiers

■ Wideband Dynamic Range IF Amplifiers

■ Aerial Preamplifiers

ABSOLUTE MAXIMUM RATINGS

Supply voltage +15V
Storage temperature

SL560C DP -55°C to +150°C

SL560C CM -65°C to +150°C
Junction temperature

SL560C DP +150°C

SL560C CM +175°C
Operating temperature range

SL560C DP -30°C to +85°C

SL560C CM -55°C to +125°C
Thermal resistance
Chip-to-ambient

SL560C CM 225°C/W

SL560C DP 111°C/W
Chip-to-case

SL560C CM 65°C/W

SL560C DP 71°C/W

ADVANCE INFORMATION

INPUT

GAIN SET

50 APPLICATIONS

8

71

6

SL560

53

4

Vcc

INPUT

COMMON BASE

CONFIGURATION

INPUT

COMMON EMITTER

CONFIGURATION

Bottom view

Vcc

1

2

SL

560

3

4

GROUND

OUTPUT CURRENT SET

OUTPUT

Top view

Fig.1 Pin connections

GAIN SET 5

10k

INPUT

(COMMON EMITTER

CONFIGURATION)

INPUT

(COMMON BASE

CONFIGURATION)

INPUT

(50 APPLICATIONS)

6

7

8

Fig.2 SL560C circuit diagram

ORDERING INFORMATION

SL560 C CM
SL560 C DP
5962-90520 (SMD)

DS3297 - 2.1

GROUND

2

OUTPUT CURRENT SET

OUTPUT

8

INPUT 50 OHMS APPLICATIONS

7

INPUT COMMON BASE

6

INPUT COMMON EMITTER
GAIN SET

5

4 Vcc

560

240

TR1

TR3TR2

3 OUTPUT

5003010k 1k 200

2

2k

1 GROUND

SL560

CM8

DP8

OUTPUT CURRENT

SET

SL560

SUPPLY DECOUPLING

CAPACITOR

+V

CC

GROUND

O/P

6

75

4

SUBVIS/BNC

8

13

2

LINK

SOCKET

Fig.3 PC layout for 50Ω line driver (see Fig.6)

I/P

ELECTRICAL CHARACTERISTICS

These characteristics are guaranteed over the following conditions (unless otherwise stated)

Frequency = 30MHz; V

=6V; RS = RL =50Ω; T

CC

=22°C ± 2°C; Test Circuit: Fig.6

AMB

SL560

Characteristic

Small signal voltage gain
Gain flatness
Upper cut-off frequency
Output swing

Typ.Min. Max. Units

11

14

±1.5

250

+5

+7

+11

Noise figure (common emitter)

1.8

3.5

Supply current

20

CIRCUIT DESCRIPTION

Three high performance transistors of identical geometry
are employed. Advanced design and processing techniques
enable these devices to combine a low base resistance (Rbb')
of 17Ω (for low noise operation) with a small physical size ­giving a transition frequency, f

The input transistor (TR1) is normally operating in common
base, giving a well defined low input impedance. The full
voltage gain is produced by this transistor and the output
voltage produced at its collector buffered by the two emitter
followers (TR2 and TR3). To obtain maximum bandwidth the
capacitance at the collector of TR1 must be minimised. Hence,
to avoid bonding pad and can capacitances, this point is not
brought out of the package. The collector load resistance of
TR1 is split, the tapping being accessible via pin 5. If required,
an external roll-off capacitor can be fixed to this point.

, in excess of 1GHz.

T

Conditions

17

dB
dB

10MHz - 220MHz

MHz

6V

V

CC

V

= 9V

CC

RS = 200Ω
R

= 50Ω

S

30

dBm
dBm

dB
dB

mA

The large number of circuit nodes accessible from the
outside of the packages affords great flexibility, enabling the
operating current and circuit configuration to be optimised for
any application. In particular, the input transistor (TR1) can be
operated in common emitter mode by decoupling pin 7 and
using 6 as the input. In this configuration, a 2dB noise figure
(R

= 200Ω) can be achieved. This configuration can give a

S

gain of 35dB with a bandwidth of 300MHz (see figs. 10 and 11).

Because the transistors used in the SL560C exhibit a high
value of f
instability. Capacitors of small physical size should be used,

, care must be taken to avoid high frequency

T

the leads of which must be short as possible to avoid oscillation
brought about by stray inductance. The use of a ground plane
is recommended.

15

10

GAIN (dB)

5

0

10 30 50 100 200 300

TA = +25°C
VCC = 6V
P

= (a) +5dBm

OUT

(b) 0dBm

FREQUENCY (MHz)

Fig.4 Frequency response, small signal gain is of a

typical device

12

10

(b)

(a)

8

6

POUT (dBm)

4

2

0

10 30 100 200 300

TA = +25°C
VCC = a) 6V

(b) 9V

FREQUENCY (MHz)

(b)

(a)

Fig.5. Frequency response, output capability (loci of maximum

output power with frequency for 1dB gain compression (typical)

SL560

TYPICAL APPLICATIONS

50

OUTPUT

10n

4

35

26

17

8

10n

10n

+6V

1.8

1.6

1.4

TA = +25°C
VCC = (a) 3V
(b) 6V
(c) 9V

(a)

INPUT

10n

Gain 14dB
Bandwidth 220MHz (P
200MHz (P

= 1mW, 50Ω)

OUT

= 5mW, 50Ω)

OUT

Input SWR 1.5:1

Fig.6 50Ω lin driver. The response of this configuration is

shown in Fig.4

V

CC

10n

INPUT

10k

10n

0V

OUTPUT

10n

4

35

26

17

8

Voltage gain 32dB at 6V
35dB at 10V
Noise figure 1.8dB (Rs = 200Ω)
Supply current 6mA at 6V
12mA at 10V
Bandwidth 75MHz (see Fig.9)

INPUT VSWR

1.2

10 100 200 400

FREQUENCY (MHz)

(b)

(c)

300

Fig.7 Input standing wave ratio plot of circuit shown

in Fig.6 (typical)

40
35

30
25
20

15

GAIN (dB)

10

5
0

10 20 30 50 100 200300 500 1000

FREQUENCY (MHz)

Fig.8 Low Noise preamplifier Fig.9 Frequency response of circuit shown in Fig.8 (typical)

1n

470

OUTPUT

1n

26

4

35

17

8

27p

Gain 13dB at Vcc = 9V

-1dB at 6MHz and 300MHz

Fig.10 Wide bandwidth amplifier

VCC

10n

INPUT

1n

15

56p

15

0V

15

10

GAIN (dB)

5

(b)

(a)

TA = +25°C
VCC = (a) 6V
(b) 9V

10 100 200300400

FREQUENCY (MHz)

Fig.11 Frequency response of circuit shown in Fig.10 (typical)

SL560

OUTPUT

1n

35

26

17

4

8

Fig.12 Three-stage directly-coupled high gain low noise amplifier

60

40

GAIN (dB)

20

0 20 50 70 100 200 300

TA = +25°C
VCC = (a) 4V
(b) 6V
(c) 9V

FREQUENCY (MHz)

4

8

10n

0.1

47µ

µ

INPUT

1n1n1n

4

35

26

17

8

10n

+2V

10n

INPUT

0V

0.1µ

4

35

26

17

8

(c)

(b)

(a)

35

26

17

OUTPUT

Gain 13dB
Power supply current 3mA
Bandwidth 125MHz
Noise figure 2.5dB (Rs = 200Ω)

Fig.13 Frequency response of circuit shown in Fig.12

(typical)

700
600
500

400
300
200

DISSIPATION (mW)

100

40 50 60 70 80 90 100 110 120 130 140 150

Fig.15 Ambient operating temperature V. degrees centigrade

Fig.14 Low power consumption amplifier

TO5

DIP

TEMPERATURE (°C)

(typical)

SL560

HEADQUARTERS OPERATIONS

GEC PLESSEY SEMICONDUCTORS

Cheney Manor, Swindon,
Wiltshire SN2 2QW, United Kingdom.
Tel: [phone]
Fax: [phone]

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1500 Green Hills Road,

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These are supported by Agents and Distributors in major countries world-wide.
Tel: [phone]
Fax: [phone]

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior knowledge the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute
any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information
and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

 GEC Plessey Semiconductors 1994

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