Datasheet SI4420DY Datasheet (Philips)

M3D315

1. Description

2. Features

Si4420DY

N-channel enhancement mode field-effect transistor

Rev. 01 — 28 May 2001 Product data

N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.

Product availability:

Si4420DY in SOT96-1 (SO8).

■ Low on-state resistance

■ Fast switching

■ TrenchMOS™ technology.

3. Applications

■ DC to DC convertors

■ DC motor control

c

c

■ Lithium-ion battery applications

■ Notebook PC

■ Portable equipment applications.

4. Pinning information

Table 1: Pinning - SOT96-1, simplified outline and symbol

Pin Description Simplified outline Symbol

1,2,3 source (s)

8

4 gate (g)
5,6,7,8 drain (d)

1

Top view MBK187

SOT96-1 (SO8)

5

4

g

MBB076

d

s

1. TrenchMOS is a trademark of Royal Philips Electronics.

Philips Semiconductors

Si4420DY

N-channel enhancement mode field-effect transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V
I
P
T
R

DS

D

tot
j
DSon

drain-source voltage (DC) Tj=25to150°C − 30 V
drain current (DC) T
total power dissipation T

=25°C; pulsed; tp≤ 10 s − 12.5 A

amb

=25°C; pulsed; tp≤ 10 s − 2.5 W

amb

junction temperature − 150 °C
drain-source on-state resistance VGS= 10 V; ID= 12.5 A 7.3 9 mΩ

= 4.5 V; ID= 10.5 A 10.9 13 mΩ

V

GS

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

drain-source voltage (DC) Tj=25to150°C − 30 V
gate-source voltage (DC) −±20 V
drain current (DC) T

peak drain current T
total power dissipation T

=25°C; pulsed; tp≤ 10 s; Figure 2 and 3 − 12.5 A

amb

=70°C; pulsed; tp≤ 10 s; Figure 2 − 10 A

T

amb

=25°C; pulsed; tp≤ 10 µs; Figure 3 − 50 A

amb

=25°C; pulsed; tp≤ 10 s; − 2.5 W

amb

=70°C; pulsed; tp≤ 10 s; Figure 1 − 1.6 W

T

amb

storage temperature −55 +150 °C
operating junction temperature −55 +150 °C

source (diode forward) current (DC) T

=25°C; pulsed; tp≤ 10 s − 2.3 A

amb

9397 750 08239

Product data Rev. 01 — 28 May 2001 2 of 12

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

Si4420DY

N-channel enhancement mode field-effect transistor

T

amb

03aa11

(oC)

120

100

P

der

(%)

80

60

40

20

0

0 25 50 75 100 125 150 175

P

P

der

tot

----------------------

P

tot 25 C°()

100%×=

Fig 1. Normalized total power dissipation as a

function of ambient temperature.

2

10

R

= VDS/ I

I

D

(A)
10

1

10

10

DSon

P

-1

-2

-1

10

D

t

p

δ

=

T

t

p

t

T

I

der
(%)

VGS≥ 10 V

I

------------------ -

D

I

D25C°()

Fig 2. Normalized continuous drain current as a

function of ambient temperature.

D.C.

1 10

120

100

80

60

40

20

0

0 25 50 75 100 125 150 175

I

D

100%×=

03ae55

tp = 10 µs
100 µs
1 ms

10 ms

100 ms

VDS (V)

10

T

amb

2

03aa19

(oC)

T

=25°C; IDM is single pulse

amb

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 08239

Product data Rev. 01 — 28 May 2001 3 of 12

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

Si4420DY

N-channel enhancement mode field-effect transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-a)

thermal resistance from junction to ambient mounted on a printed circuit board;

minimum footprint, t ≤ 10 sec. Figure 4

7.1 Transient thermal impedance

50 K/W

10

Z

th(j-amb)

(K/W)

10

1

10

2

-1

-4

10

δ = 0.5

0.2

0.1

0.05

0.02

single pulse

-3

10

-2

10

-1

10

1 10 10

03ae54

t

P

t

p

p

δ =

T

t

T

2

3

t

(s)

10

p

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.

9397 750 08239

© Philips Electronics N.V. 2001. All rights reserved.

Product data Rev. 01 — 28 May 2001 4 of 12

Philips Semiconductors

Si4420DY

N-channel enhancement mode field-effect transistor

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

GS(th)

I

DSS

I

GSS

I

D(on)

R

DSon

Dynamic characteristics

g

fs

Q

g(tot)

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Source-drain (reverse) diode

V

SD

t

rr

gate-source threshold voltage ID= 250 µA; VDS=VGS; Figure 9 1 −−V
drain-source leakage current VDS=30V; VGS=0V

=25°C −−1 µA

T

j

=55°C −−5 µA

T

j

gate-source leakage current VGS= ±20 V; VDS=0V −−100 nA
on-state drain current VDS≥ 5 V; VGS=10V 30 − A
drain-source on-state resistance VGS= 10 V; ID= 12.5 A; Figure 7 and 8 − 7.3 9 mΩ

= 4.5 V; ID= 10.5 A; Figure 7 and 8 − 10.9 13 mΩ

V

GS

forward transconductance VDS=15V; ID=7A;Figure 11 − 15 − S
total gate charge ID= 12.5 A; VDD=15V;VGS=10V;Figure 14 − 64.5 120 nC
gate-source charge − 7.6 − nC
gate-drain (Miller) charge − 11.5 − nC
turn-on delay time VDD=15V; RD=15Ω; VGS=10V; RG=6Ω− 12 30 ns
turn-on rise time − 15 60 ns
turn-off delay time − 60 150 ns
turn-off fall time − 50 140 ns

source-drain (diode forward) voltage IS= 2.3 A; VGS=0V;Figure 13 − 0.7 1.1 V
reverse recovery time IS= 2.3 A; dIS/dt = −100 A/µs − 60 − ns

50

I

D

(A)
40

30

20

10

0

0 0.5 1 1.5 2

4 V10 V

03ae56

VGS = 3 V

V

(V)

DS

Fig 5. Output characteristic; drain current as a

function of drain-source voltage; typical values.

9397 750 08239

50

VDS > ID x R

I

D

(A)

40

30

20

10

0

01234

DSon

150 ºC

Tj=25°C and 150 °C; VDS> IDxR

Fig 6. Transfer characteristic: drain current as

function of gate-source voltage; typical values

© Philips Electronics N.V. 2001. All rights reserved.

DSon

25 ºC

V

03ae58

(V)

GS

Product data Rev. 01 — 28 May 2001 5 of 12

Philips Semiconductors

Si4420DY

N-channel enhancement mode field-effect transistor

0.02

R

DSon

(Ω)

0.01

Tj = 25 ºC

0

0 1020304050

03ae57

4 V

VGS =10 V

(A)

I

D

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

03aa33

V

GS(th)

2.5

(V)

2

03ad57

(ºC)

T

j

a

=

2

a

1.6

1.2

0.8

0.4

0

-60 0 60 120 180

R

DSon

----------------------------

R

DSon 25 C°()

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

-1

10

I

D

(A)

-2

10

03aa36

1.5

1

0.5

0

-60 0 60 120 180

ID= 250 µA; VDS=V

GS

T

(oC)

j

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

-3

10

-4

10

-5

10

-6

10

0 0.5 1 1.5 2 2.5 3

maxtypmin

(V)

V

GS

Tj=25°C; VDS=5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

9397 750 08239

© Philips Electronics N.V. 2001. All rights reserved.

Product data Rev. 01 — 28 May 2001 6 of 12

Philips Semiconductors

Si4420DY

N-channel enhancement mode field-effect transistor

DSon

150 ºC

03ae59

I

(A)

D

50

VDS > ID x R

g

fs

(S)

40

30

20

10

0

0 1020304050

DSon

Tj = 25 ºC

Tj=25°C and 150 °C; VDS> IDxR

Fig 11. Forward transconductance as a function of

drain current; typical values.

03ae60

(A)

50

40

I

S

VGS = 0 V

V

03ae61

C

C

(V)

DS

C

iss

oss

rss

2

10

10

10

C

C

C
(pF)

4

,

iss

,

oss

rss

3

2

-1

10

1 10 10

VGS= 0 V; f = 1 MHz

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical
values.

10
V

GS

(V)

8

ID = 12.5A
VDD = 15 V
Tj = 25 ºC

03ae62

30

20

150 ºC

10

0

0 0.3 0.6 0.9 1.2

Tj = 25 ºC

V

SD

(V)

6

4

2

0

0 1530456075

Tj=25°C and 150 °C; VGS=0V ID= 12.5 A; VDD=15 V

Fig 13. Source (diode forward) current as a function of

source-drain (diode forward) voltage;

Fig 14. Gate-source voltage as a function of gate

charge; typical values.

typical values.

(nC)

Q

G

9397 750 08239

© Philips Electronics N.V. 2001. All rights reserved.

Product data Rev. 01 — 28 May 2001 7 of 12

Philips Semiconductors

9. Package outline

Si4420DY

N-channel enhancement mode field-effect transistor

SO8: plastic small outline package; 8 leads; body width 3.9 mm

D

c

y

Z

8

pin 1 index

1

e

5

A

2

A

4

w M

b

p

SOT96-1

E

H

E

1

L

detail X

A

X

v M

A

Q

(A )

L

p

A

3

θ

0 2.5 5 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE
VERSION

SOT96-1

A

max.

1.75

0.069

A1A2A

0.25

1.45

0.10

1.25

0.010

0.057

0.004

0.049

IEC JEDEC EIAJ

076E03 MS-012

0.25

0.01

b

3

p

0.49

0.25

0.36

0.19

0.019

0.0100

0.014

0.0075

UNIT

inches

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

(1)E(2)

cD

5.0

4.8

0.20

0.19

REFERENCES

eHELLpQZywv θ

4.0

1.27

3.8

0.16

0.050

0.15

6.2

5.8

0.244

0.228

1.05

1.0

0.4

0.039

0.016

0.7

0.6

0.028

0.024

0.25 0.10.25

0.010.010.041 0.004

EUROPEAN

PROJECTION

(1)

0.7

0.3

0.028

0.012

ISSUE DATE

97-05-22
99-12-27

o

8

o

0

Fig 15. SOT96-1 (SO8).

9397 750 08239

Product data Rev. 01 — 28 May 2001 8 of 12

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

N-channel enhancement mode field-effect transistor

10. Revision history

Table 6: Revision history

Rev Date CPCN Description

01 20010528 - Product specification; initial version

Si4420DY

9397 750 08239

Product data Rev. 01 — 28 May 2001 9 of 12

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

11. Data sheet status

Si4420DY

N-channel enhancement mode field-effect transistor

Data sheet status

Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors

Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a

Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[1]

Product status

12. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.

[2]

Definition

reserves the right to change the specification in any manner without notice.

later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.

make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.

9397 750 08239

© Philips Electronics N.V. 2001 All rights reserved.

Product data Rev. 01 — 28 May 2001 10 of 12

Philips Semiconductors

N-channel enhancement mode field-effect transistor

Philips Semiconductors - a worldwide company

Si4420DY

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For all other countries apply to: Philips Semiconductors,

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Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
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Internet: http://www.semiconductors.philips.com

(SCA72)

9397 750 08239

Product data Rev. 01 — 28 May 2001 11 of 12

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

Contents

1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7.1 Transient thermal impedance. . . . . . . . . . . . . . 4

8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10

12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Si4420DY

N-channel enhancement mode field-effect transistor

© Philips Electronics N.V. 2001. Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.

The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.

Date of release: 28 May 2001 Document order number: 9397 750 08239