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SPICE Device Model Si4160DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
DESCRIPTION
The attached SPICE model describes the typical electrical
characteristics of the n-channel vertical DMOS. The
subcircuit model is extracted and optimized over the - 55 °C
to 125 °C temperature ranges under the pulsed 0 V to 10 V
gate drive. The saturated output impedance is best fit at the
gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used
to model the gate charge characteristics while avoiding
convergence difficulties of the switched C
model. All
gd
model parameter values are optimized to provide a best fit
to the measured electrical data and are not intended as an
exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
CHARACTERISTICS
•N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
•Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the - 55 °C to + 125 °C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse
Recovery Characteristics
D
C
GD
M
2
Gy
–
G
R
G
Note
• This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer
to the appropriate datasheet of the same number for guaranteed specification limits.
+
ETCV
Gx
C
GS
R
1
3
M
1
S
DBD
S12-2653-Rev. B, 05-Nov-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 64670
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SPICE Device Model Si4160DY
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
Static
Gate Threshold Voltage V
Drain-Source On-State Resistance
Forward Transconductance
a
R
a
Diode Forward Voltage V
Dynamic
b
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
GS(th)
DS(on)
g
fs
SD
iss
420 406
oss
171 168
rss
g
Gate-Source Charge Qgs 5.1 5.1
Gate-Drain Charge Q
5.2 5.2
gd
VDS = VGS, ID = 250 μA 1.2 V
= 10 V, ID = 15 A 0.0041 0.0040
V
GS
V
= 4.5 V, ID = 10 A 0.0051 0.0051
GS
VDS = 15 V, ID = 15 A 80 60 S
IS = 3 A 0.73 0.73 V
= 15 V, VGS = 0 V, f = 1 MHz
V
DS
= 15 V, VGS = 10 V, ID = 10 A 33 36
V
DS
V
= 15 V, VGS = 4.5 V, ID = 10 A
DS
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
SIMULATED
DATA
2050 2071
17 16.8
Vishay Siliconix
MEASURED
DATA
UNIT
pF Output Capacitance C
nC
S12-2653-Rev. B, 05-Nov-12
2
Document Number: 64670
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 3
SPICE Device Model Si4160DY
I
D
- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
R
DS(on)
- On-Resistance (W)
I
D
- Drain Current (A)
Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
0
14
28
42
56
70
0.0 0.5 1.0 1.5 2.0 2.5
VGS = 3 V
VGS = 10, 7, 6, 5, 4 V
0
2
4
6
8
10
012345
TJ = - 55 °C
TJ = 125 °C
TJ = 25 °C
0.0035
0.0040
0.0045
0.0050
0.0055
0.0060
01428425670
VGS = 10 V
VGS = 4.5 V
0
560
1120
1680
2240
2800
0 6 12 18 24 30
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 8 16 24 32 40
VDS = 20 V
VDS = 15 V
ID = 10 A
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
TJ = 25 °C
TJ = 150 °C
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COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 °C, unless otherwise noted)
Vishay Siliconix
Note
• Dots and squares represent measured data.
S12-2653-Rev. B, 05-Nov-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
3
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 64670
Page 4
SPICE Device Model Si4160DY
VGS = 4.5 V, 10 V
ID = 15 A
ID = 15 A
TJ = 125 °C
TJ = 25 °C
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COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 °C, unless otherwise noted)
Vishay Siliconix
1.8
1.6
1.4
1.2
- On-Resistance
DS(on)
1.0
Normalized
R
0.8
0.6
- 50 - 25 0 25 50 75 100 125 150
T
- Junction Temperature (°C)
J
0.020
0.015
0.010
- On-Resistance (Ω)
DS(on)
R
0.005
0.000
012345678910
VGS - Gate-to-Source Voltage (V)
Note
• Dots and squares represent measured data.
S12-2653-Rev. B, 05-Nov-12
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Document Number: 64670
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
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Document Number: 91000
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