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Si3457DV
Single P-Channel Logic Level PowerTrench
MOSFET
Si3457DV
April 2001
PRELIMINARY
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild’s advanced PowerTrench process. It
has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
Features
• –4 A, –30 V. R
R
• Low gate charge
• High performance trench te chnology for extremely
low R
DS(ON)
= 50 mΩ @ VGS = –10 V
DS(ON)
= 75 mΩ @ VGS = –4.5 V
DS(ON)
S
D
D
1
2
6
5
G
SuperSOT -6
TM
D
D
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
3
4
Symbol Parameter Ratings Units
V
Drain-Source Voltage –30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) –4 A
– Pulsed –20
Maximum Power Dissipation (Note 1a) 1.6 W PD
TJ, T
Operating and Storage Junction Temperature Range –55 to +150
STG
(Note 1b)
±25
0.8
V
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 78
(Note 1) 30
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.457 Si3457DV 7’’ 8mm 3000 units
2001 Fairchild Semiconductor Corporation
°C/W
°C/W
Si3457DV Rev A (W)
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Si3457DV
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 25 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –25 V VDS = 0 V –100 nA
V
= 0 V, ID = –250 µA
GS
= –250 µA,Referenced to 25°C
I
D
–30 V
–22
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = –10 V, VDS = –5 V –20 A
D(on)
V
= VGS, ID = –250 µA
DS
= –250 µA,Referenced to 25°C
I
D
VGS = –10 V, ID = –4 A
V
= –4.5 V, ID = –3.4 A
GS
= –10 V, ID = –4 A;TJ=125°
V
GS
–1 –1.8 –3 V
4
44
67
60
50
75
70
mV/°C
mΩ
gFS Forward Transconductance VDS = –5 V, ID = –4 A 8.4 S
Dynamic Characteristics
C
Input Capacitance 470 pF
iss
C
Output Capacitance 126 pF
oss
C
Reverse Transfer Capacitance
rss
= –15 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
61 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 7 14 ns
d(on)
tr Turn–On Rise Time 12 22 ns
t
Turn–Off Delay Time 16 29 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 6 8.1 nC
Qgs Gate–Source Charge 2.1 nC
Qgd Gate–Drain Charge
= –15 V, ID = –1 A,
V
DD
= –10 V, R
V
GS
= –15 V, ID = –4 A,
V
DS
V
= –.5 V
GS
GEN
= 6 Ω
6 12 ns
2 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A
VSD Drain–Source Diode Forward
Voltage
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
a) 78°C/W when
mounted on a 1in
of 2 oz copper
VGS = 0 V, IS = –1.3 A (Note 2) –0.77 –1.2 V
2
pad
b) 156°C/W when mounted
on a minimum pad of 2 oz
copper
Si3457DV Rev A(W)
Page 3
)
Typical Characteristics
20
VGS = -10V
-6.0V
15
10
, DRAIN CURRENT (A)
D
5
-I
0
012345
-5.0V
-4.5V
-4.0V
-V
, DRAIN TO SOURCE VOLTAGE (V)
DS
-3.5V
-3.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
2
1.8
VGS = -4.5V
1.6
1.4
, NORMALIZED
1.2
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 4 8 121620
-5.0V
-6.0V
-I
, DRAIN CURRENT (A)
D
-7.0V
Drain Current and Gate Voltage.
-8.0V
Si3457DV
-10V
1.6
ID = -4.0A
= -10V
V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEMPERATURE (oC)
T
J
Figure 3. On-Resistance Variation
withTemperature.
15
VDS = -5V
12
9
6
, DRAIN CURRENT (A)
D
-I
3
0
12345
, GATE TO SOURCE VOLTAGE (V)
-V
GS
TA = -55oC
125
25oC
o
0.22
0.18
0.14
0.1
, ON-RESISTANCE (OHM)
TA = 25oC
0.06
DS(ON)
R
0.02
246810
TA = 125oC
, GATE TO SOURCE VOLTAGE (V)
-V
GS
ID = -2.0A
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A
S
-I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
BODY DIODE FORWARD V O LTAGE (V)
-V
SD,
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si3457DV Rev A(W)
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)
Typical Characteristics
10
ID = -4A
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
-V
0
0246810
Q
, GATE CHARGE (nC)
g
VDS = -5V
-10V
-15V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
600
C
ISS
450
300
C
OSS
CAPACITANCE (pF)
150
C
RSS
0
0 6 12 18 24 30
, DRAIN TO SOURCE VOLTAGE (V)
-V
DS
f = 1 MHz
= 0 V
V
GS
Si3457DV
100
R
LIMIT
DS(ON)
10
1
VGS = -10V
SINGLE PULSE
, DRAIN CURRENT (A)
D
0.1
-I
0.01
= 156oC/W
R
θ
JA
= 25oC
T
A
0.1 1 10 100
, DRAIN-SOURCE VO LTAGE (V)
-V
DS
1s
DC
100ms
10ms
1ms
100µs
10
SINGLE PULSE
R
8
6
4
2
P(pk), PEAK TRANSIENT POWER (W)
0
0.01 0.1 1 10 100
, TIME (sec)
t
1
θ
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.01
r(t), NORMALIZED EFFECTIVE
0.001
TRANSIENT THERMAL RESISTANCE
0.1
0.05
0.02
0.01
SINGLE PULSE
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t
, TIME (sec)
1
R
(t) = r(t) + R
θJA
R
= 156oC/W
θJA
P(pk
t
1
t
T
- TA = P * R
J
Duty Cycle, D = t
= 156°C/W
JA
= 25°C
T
A
2
θJA
(t)
JA
θ
/ t
1
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si3457DV Rev A(W)
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOL T™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
St ar* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
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