Datasheet Si1304BDL Datasheet (Vishay) [ru]

Si1304BDL

30

1.1

C/W

PRODUCT SUMMARY

V

(V)

DS

r

(W)

DS(on)

0.270 @ VGS = 4.5 V 0.90

0.385 @ VGS = 2.5 V 0.75

SC-70 (3-LEADS)

G

1

S

2

New Product

N-Channel 30-V (D-S) MOSFET

FEATURES

a

I

(A)

D

3

D

Qg (Typ)

Marking Code

KF XX

D TrenchFETr Power MOSFET
D 100% R

YY

Lot Traceability
and Date Code

Part # Code

Tested

g

Vishay Siliconix

RoHS

COMPLIANT

D

G

Top View

Ordering Information: Si1304BDL–T1–E3

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

TC = 25_C

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

TC = 70_C

TA = 25_C

TA = 70_C

TC = 25_C

TA = 25_C

TC = 25_C

TC = 70_C

TA = 25_C

TA = 70_C

DM

P

DS

GS "12

I

D

I

S

D

stg

30

0.90

0.71

b, c

0.85

b, c

0.68

4

0.31

b, c

0.28

0.37

0.24

b, c

0.34

b, c

0.22

–55 to 150

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

b, d

t p 5 sec

R

thJA

thJF

315 375

285 340

S

N-Channel MOSFET

V

A

W

_C

_

_

Notes:
a. Based on T
b. Surface mounted on 1” x 1” FR4 board.
c. t = 5 sec
d. Maximum under steady state conditions is 360 _C/W.

Document Number: 73480
S–52057—Rev. B, 03–Oct–05

= 25_C.

C

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Si1304BDL

Drain-S

a

W

p

V

DD

R

L

W

g

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V

VDS Temperature Coefficient

V

Temperature Coefficient

GS(th)

DVDS/T

DV

GS(th)/TJ

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

-

ource On-State Resistance

Forward Transconductance

Dynamic

b

a

-

a

a

I

r

DS(on)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

DS

GS(th)

GSS

DSS

D(on)

g

fs

iss

oss

rss

g

gs

gd

g

d(on)

r

d(off)

f

VGS = 0 V, I

J

VDS = VGS, I

VDS = 0 V, VGS = "12 V "100

VDS = 30 V, VGS = 0 V 1

VDS = 30 V, VGS = 0 V, TJ = 70_C

VDS w 5 V, VGS = 4.5 V

VGS = 4.5 V, ID = 0.9

VGS =2.5 V, ID = 0.75 0.308 0.385

VDS = 15 V, ID = 0.9 2 S

V

= 15 V, VGS = 0 V, f = 1 MHz 30

DS

V

= 15 V, VGS = 4.5 V, ID = 0.9 1.8 2.7

DS

V

= 15 V, VGS = 2.5 V, ID= 0.9 0.4

DS

V

ID ^ 0.68 A, V

= 250 mA

D

I

= 250 mA

D

= 250 mA

D

f = 1 MHz 1.5 2.3

= 15 V, R

= 15 V,

= 22 W

= 22

= 4.5 V, Rg = 1 W

GEN

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulse Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Fall Time t

Reverse Recovery Rise Time t

S

I

SM

SD

rr

rr

a

b

IF = 0.28 A, di/dt = 100 A/ms, TJ = 25_C

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TC = 25_C

I

= 0.28 A

S

30 V

27.3

3

mV/_C

0.6 1.3 V

5

4 A

0.216 0.270

100

20

1.1 1.7

0.6

10 15

30 45

5 25

10 15

0.31

4

0.8 1.2 V

50 75 ns

105 160 nC

34

16

nA

mA

pF

nC

W

ns

A

ns

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Document Number: 73480

S–52057—Rev. B, 03–Oct–05

Si1304BDL

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

4

3

2

– Drain Current (A)I

D

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0.6

Output Characteristics Transfer Characteristics curves vs. Temp

VGS = 3 thru 5 V

VGS = 2.5 V

VGS = 2.0 V

VGS = 1.5 V

VDS – Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Vishay Siliconix

2.0

1.5

1.0

TA = –55_C

– Drain Current (A)I

D

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5

VGS – Gate-to-Source Voltage (V)

180.0

TA = 25_C

TA = 125_C

Capacitance

0.5

W )

0.4

0.3

– On-Resistance (r

DS(on)

0.2

0.1

– Gate-to-Source Voltage (V)

GS

V

VGS = 2.5 V

VGS = 4.5 V

012345

ID – Drain Current (A)

5

ID = 0.91 A

4

3

2

1

Qg–Gate Charge

VDS = 15 V

VDS = 24 V

150.0

120.0

90.0

60.0

C – Capacitance (pF)

30.0

0.0

0.0 5.0 10.0 15.0 20.0 25.0 30.0

On-Resistance vs. Junction Temperature

2.0

ID = 0.90 A

1.7

1.4

1.1

– On-Resistance

(Normalized)

DS(on)

r

0.8

C

C

oss

C

rss

– Drain-Source Voltage (V)

V

DS

VGS = 4.5 V, ID = 0.9 A

VGS = 2.5 V, ID = 0.75 A

iss

0

0.0 0.5 1.0 1.5 2.0

Qg – Total Gate Charge (nC)

Document Number: 73480
S–52057—Rev. B, 03–Oct–05

0.5
–50 –25 0 25 50 75 100 125 150

T

– Junction Temperature (_C)

J

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Si1304BDL

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New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

10.0

1.0

0.1

– Source Current (A)I

S

0.0

0.3 0.6 0.9 1.2

1.4

Forward Diode Voltage vs. Temp r

TJ = 150_C

TJ = 25_C

VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)

Threshold Voltage

W )

– On-Resistance (r

DS(on)

vs VGS vs Temperature

0.800

0.600

0.400

0.200

0.000
012345

DS(on)

ID = 0.9 A

TA = 125_C

TA = 25_C

Single Pulse Power, Junction-to-Ambient

20

Variance (V)V

GS(th)

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6
–50 –25 0 25 50 75 100 125 150

ID = 250 mA

TJ – Temperature (_C)

10

1

0.1

– Drain Current (A)I

D

0.01

*Limited by r

TA = 25_C

Single Pulse

16

12

Power (W)

Safe Operating Area

DS(on)

8

4

0

–3

10

1 ms

10 ms

100 ms

1 s

10 s

dc

TA = 25_C

–1

–2

10

1 100 6001010

Time (sec)

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0.001

BV

0.1

*V

1

V

– Drain-to-Source Voltage (V)

DS

u minimum VGS at which r

GS

DSS

Limited

1000

Document Number: 73480

S–52057—Rev. B, 03–Oct–05

DS(on)

100

is specified

10

Si1304BDL

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

1.2

1.0

0.8

0.6

0.4

– Drain Current (A)

D

I

0.2

0.0
0 25 50 75 100 125 150

Current De-Rating*

TC – Case Temperature (_C)

0.4

0.3

0.2

Power Dissipation (W)

0.1

0.0
25 50 75 100 125 150

Vishay Siliconix

Power, De-Rating

Case Temperature (_C)

*The power dissipation P
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Document Number: 73480
S–52057—Rev. B, 03–Oct–05

is based on T

D

= 150_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for

J(max)

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Si1304BDL

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New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

2

1

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

–4

Duty Cycle = 0.5

10

Normalized Thermal Transient Impedance, Junction-to-Ambient

Single Pulse

–3

–2

10

–1

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

Notes:

P

DM

t

1

t

2

t

thJA

t

thJA

100

1

2

(t)

= 360_C/W

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

– TA = PDMZ

JM

4. Surface Mounted

1 10 60010

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

0.2

0.1

0.05

0.02

Single Pulse

–4

–3

10

–2

10

–1

11010

Square Wave Pulse Duration (sec)

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Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see

http://www.vishay.com/ppg?73480.

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Document Number: 73480

S–52057—Rev. B, 03–Oct–05

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Notice

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or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
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Revision: 08-Apr-05 1