Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor SGSF313PI
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed to be used as switch in high efficency off-line
(220V mains) switching power supplies for consumer
applications like sets VCR’s and monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
= 450V(Min)
SYMBOL PARAMETER VALUE UNIT
V
CEX
V
CES
V
CEO
V
EBO
I
I
CM
I
I
BM
P
T
T
C
B
stg
Collector-Emitter Voltage
= -2.5V)
(V
BE
Collector-Emitter Voltage
=0)
(V
BE
1000 V
1000 V
Collector-Emitter Voltage 450 V
Emitter-Base Voltage 10 V
Collector Current-Continuous 7 A
Collector Current-Peak 10 A
B Base Current 3 A
Base Current-Peak 6 A
Total Power Dissipation
D
j
=25℃
@T
C
Junction Temperature 150 ℃
35 W
Storage Temperature -65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Rresistance,Junction to Case 3.57
℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor SGSF313PI
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
CE
(sat)-3
V
BE
(sat)-1
V
BE
(sat)-2
V
BE
(sat)-3
I
CES
I
CEO
h
FE-1
h
FE-2
Collector-Emitter Sustaining Voltage IC= 0.1A; L= 25mH 450 V
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
= 1 A ;IB= 0.1A
C
IC= 1 A ;IB= 0.1A ;TC=125℃
I
= 2A ;IB= 0.4 A
C
= 2A ;IB= 0.4 A ;TC=125℃
I
C
0.5
0.6
0.45
0.8
V
V
I
Collector-Emitter Saturation Voltage IC= 2.5A ;IB= 0.5 A B 0.75 V
Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 1.1 V
Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.25 V
Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5 A 1.3 V
Collector Cutoff Current
= 1000V;VBE= 0
CE
VCE= 1000V;VBE= 0;TC=125℃
0.01
0.1
mA
V
Collector Cutoff Current VCE= 450V; IB= 0 0.1 mA
I
DC Current Gain
DC Current Gain
= 1A ; VCE= 2.5V
C
IC= 1A ; VCE= 2.5V;TC=125℃
I
= 1A ; VCE= 5V
C
IC= 1A ; VCE= 5V;TC=125℃
12
15
25
28
45
h
h
FE-3
FE-4
DC Current Gain
DC Current Gain IC= 5mA; VCE= 5V 10
Switching Times; Resistive Load
t
on
t
S
t
f
Turn-on Time 0.5 1 μs
Storage Time 1.5 2.5 μs
Turn-off T ime
isc Website：www.iscsemi.cn
I
= 2A ; VCE= 1V
C
= 2A ; VCE= 1V;TC=125℃
I
C
V
=250V ,IC=2.5A
CC
I
= 0.5A;IB2= -1A
B1
6
12
0.18 0.3 μs
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