Datasheet SGSD100, SGSD200 Datasheet (SGS Thomson Microelectronics)

POWER DARLINGTON TRANSISTORS

■ SGS-THOMSONPREFERREDSALESTYPES

■ COMPLEMENTARY PNP - NPN DEVICES

■ MONOLITHICDARLINGTON

CONFIGURATION

APPLICATIONS:

■ GENERALPURPOSE SWITCHING

APPLICATION

■ GENERALPURPOSE AMPLIFIERS

DESCRIPTION

The SGSD100 is silicon epitaxial-base NPN
power transistor in monolithic Darlington
configuration mounted in TO-218 plastic
package.

It is inteded for use in general purpose and high
currentamplifier applications.

The complementaryPNP type is the SGSD200.

SGSD100
SGSD200

COMPLEMENTARY SILICON

3

2

1

TO-218

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

NPN SGSD100
PNP SGSD200

V
V

I

I
P
T

ForPNPtypesvoltageand currentvalues arenegative.

September1997

Collector-Base Voltage (IE=0) 80 V

CBO

Colle c t o r -Emitte r Vo lt a g e (IB=0) 80 V

CEO

Collector Current 25 A

I

C

Collector Peak Current 40 A

CM

Base Current 6 A

I

B

Base Peak Current 10 A

BM

Tota l Dissipat io n at Tc≤ 25oC 130 W

tot

Storage Temperature -65 to 150

stg

Max. Operating JunctionTemperature 150

T

j

o

C

o

C

1/6

SGSD100/SGSD200

THERMAL DATA

R

thj-case

Thermal Resistance Ju nction-case Max 0.96

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CBO

I

CEV

I

CEO

I

EBO

V

CEO(sus)

Collector Cut-off
Curren t (I

E

=0)

Collector Cut-off
Curren t (V

= -0.3V)

BE

Collector Cut-off
Curren t (I

B

=0)

Emitter Cut-offCurrent
(I

=0)

C

∗ Collector-Emitter

=80V

V

CE

V

=80V Tc= 100oC

CE

=80V

V

CE

V

=80V Tc= 100oC

CE

=60V

V

CE

V

=60V Tc= 100oC

CE

=5V 2 mA

V

EB

0.5

1.5

0.1
2

0.5

1.5

IC=50mA 80 V

Sustaini ng Voltage

V

∗ Collector-Emitter

CE(sat)

Saturation Voltage

V

∗ Base-Emit ter

BE(sat)

Saturation Voltage

V

∗ Base-Emit ter Volta ge IC=10A VCE=3V

BE

h

∗ DC Current Gain IC=5A VCE=3V

FE

V

∗ Diode Forward Voltage IF=5A

F

E

Second Breakdown

s/b

Energy

I

s/b

Second Breakdown

IC=5A IB=20mA
I

=5A IB=20mA Tc= 100oC

C

I

=10A IB=40mA

C

I

=10A IB=40mA Tc=100oC

C

I

=20A IB=80mA

C

I

=20A IB=80mA Tc=100oC

C

IC=20A IB=80mA
I

=20A IB=80mA Tc=100oC

C

I

=10A VCE=3V Tc= 100oC

C

I

=5A VCE=3V Tc=100oC

C

I

=10A VCE=3V

C

I

=10A VCE=3V Tc= 100oC

C

I

=20A VCE=3V

C

I

=20A VCE=3V Tc= 100oC

C

I

=5A Tc=100oC

F

I

=10A

F

I

=10A Tc= 100oC

F

I

=20A

F

I

=20A Tc= 100oC

F

VCC=30V L=3mH
V

=30V L=3mH Tc=100oC

CC

VCE= 25 V t = 500 ms 6 A

0.95

0.8

1.2

1.3
2

2.3

2.6

2.5

11.8

1.6

600

5000
8000

500

4000
8000

300

2000
2000

1.2

0.85

1.6

1.4

2.3

1.3

250
250

1.2

1.75

3.5

3.3 V

3V

15000
12000

6000

Current

∗ Pulsed:Pulseduration= 300µs,duty cycle 1.5 %
ForPNP type voltageand currentvalues are negative.

mA
mA

mA
mA

mA
mA

V
V
V
V
V
V

V

V

V
V
V
V
V
V

mJ
mJ

2/6

SGSD100/SGSD200

Safe OperatingAreas

DC Current Gain (PNP type)

DC Current Gain (NPNtype)

DC Current Gain (NPNtype)

DC Current Gain (PNP type)

Collector-Emitter Saturation Voltage (NPN type)

3/6

SGSD100/SGSD200

Collector-Emitter Saturation Voltage(PNP type)

4/6

TO-218 (SOT-93)MECHANICAL DATA

SGSD100/SGSD200

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437

H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220

R – 12.2 – 0.480

Ø 4 4.1 0.157 0.161

mm inch

E

A

C

L5

D

L6

L3

L2

H

G

¯

F

R

123

P025A

5/6

SGSD100/SGSD200

Informationfurnished is believed to beaccurate and reliable. However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequencesof use of such informationnor for any infringementof patents or otherrightsof third parties which may results from its use. No
license is grantedby implicationorotherwise under any patent or patentrights ofSGS-THOMSONMicroelectronics.Specificationsmentioned
in thispublication are subjectto change without notice. This publicationsupersedesand replacesall informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuseas critical componentsinlifesupportdevicesorsystems withoutexpress
written approval of SGS-THOMSON Microelectonics.

 1997 SGS-THOMSONMicroelectronics -Printed in Italy - All Rights Reserved

Australia- Brazil - Canada- China - France- Germany- Hong Kong - Italy - Japan- Korea - Malaysia - Malta -Morocco - The Netherlands -

Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A

SGS-THOMSONMicroelectronicsGROUPOF COMPANIES

...

6/6