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POWER DARLINGTON TRANSISTORS
■ SGS-THOMSONPREFERREDSALESTYPES
■ COMPLEMENTARY PNP - NPN DEVICES
■ MONOLITHICDARLINGTON
CONFIGURATION
APPLICATIONS:
■ GENERALPURPOSE SWITCHING
APPLICATION
■ GENERALPURPOSE AMPLIFIERS
DESCRIPTION
The SGSD100 is silicon epitaxial-base NPN
power transistor in monolithic Darlington
configuration mounted in TO-218 plastic
package.
It is inteded for use in general purpose and high
currentamplifier applications.
The complementaryPNP type is the SGSD200.
SGSD100
SGSD200
COMPLEMENTARY SILICON
3
2
1
TO-218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN SGSD100
PNP SGSD200
V
V
I
I
P
T
ForPNPtypesvoltageand currentvalues arenegative.
September1997
Collector-Base Voltage (IE=0) 80 V
CBO
Colle c t o r -Emitte r Vo lt a g e (IB=0) 80 V
CEO
Collector Current 25 A
I
C
Collector Peak Current 40 A
CM
Base Current 6 A
I
B
Base Peak Current 10 A
BM
Tota l Dissipat io n at Tc≤ 25oC 130 W
tot
Storage Temperature -65 to 150
stg
Max. Operating JunctionTemperature 150
T
j
o
C
o
C
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SGSD100/SGSD200
THERMAL DATA
R
thj-case
Thermal Resistance Ju nction-case Max 0.96
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEV
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Curren t (I
E
=0)
Collector Cut-off
Curren t (V
= -0.3V)
BE
Collector Cut-off
Curren t (I
B
=0)
Emitter Cut-offCurrent
(I
=0)
C
∗ Collector-Emitter
=80V
V
CE
V
=80V Tc= 100oC
CE
=80V
V
CE
V
=80V Tc= 100oC
CE
=60V
V
CE
V
=60V Tc= 100oC
CE
=5V 2 mA
V
EB
0.5
1.5
0.1
2
0.5
1.5
IC=50mA 80 V
Sustaini ng Voltage
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emit ter
BE(sat)
Saturation Voltage
V
∗ Base-Emit ter Volta ge IC=10A VCE=3V
BE
h
∗ DC Current Gain IC=5A VCE=3V
FE
V
∗ Diode Forward Voltage IF=5A
F
E
Second Breakdown
s/b
Energy
I
s/b
Second Breakdown
IC=5A IB=20mA
I
=5A IB=20mA Tc= 100oC
C
I
=10A IB=40mA
C
I
=10A IB=40mA Tc=100oC
C
I
=20A IB=80mA
C
I
=20A IB=80mA Tc=100oC
C
IC=20A IB=80mA
I
=20A IB=80mA Tc=100oC
C
I
=10A VCE=3V Tc= 100oC
C
I
=5A VCE=3V Tc=100oC
C
I
=10A VCE=3V
C
I
=10A VCE=3V Tc= 100oC
C
I
=20A VCE=3V
C
I
=20A VCE=3V Tc= 100oC
C
I
=5A Tc=100oC
F
I
=10A
F
I
=10A Tc= 100oC
F
I
=20A
F
I
=20A Tc= 100oC
F
VCC=30V L=3mH
V
=30V L=3mH Tc=100oC
CC
VCE= 25 V t = 500 ms 6 A
0.95
0.8
1.2
1.3
2
2.3
2.6
2.5
11.8
1.6
600
5000
8000
500
4000
8000
300
2000
2000
1.2
0.85
1.6
1.4
2.3
1.3
250
250
1.2
1.75
3.5
3.3 V
3V
15000
12000
6000
Current
∗ Pulsed:Pulseduration= 300µs,duty cycle 1.5 %
ForPNP type voltageand currentvalues are negative.
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
mJ
mJ
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Page 3
SGSD100/SGSD200
Safe OperatingAreas
DC Current Gain (PNP type)
DC Current Gain (NPNtype)
DC Current Gain (NPNtype)
DC Current Gain (PNP type)
Collector-Emitter Saturation Voltage (NPN type)
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SGSD100/SGSD200
Collector-Emitter Saturation Voltage(PNP type)
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Page 5
TO-218 (SOT-93)MECHANICAL DATA
SGSD100/SGSD200
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R – 12.2 – 0.480
Ø 4 4.1 0.157 0.161
mm inch
E
A
C
L5
D
L6
L3
L2
H
G
¯
F
R
123
P025A
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SGSD100/SGSD200
Informationfurnished is believed to beaccurate and reliable. However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequencesof use of such informationnor for any infringementof patents or otherrightsof third parties which may results from its use. No
license is grantedby implicationorotherwise under any patent or patentrights ofSGS-THOMSONMicroelectronics.Specificationsmentioned
in thispublication are subjectto change without notice. This publicationsupersedesand replacesall informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuseas critical componentsinlifesupportdevicesorsystems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSONMicroelectronics -Printed in Italy - All Rights Reserved
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