Datasheet SGS5N60RUF Datasheet (Fairchild Semiconductor)

April 2001

SGS5N60RUF

SGS5N60RUF

Short Circuit Rated IGBT

General Description

Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and ge neral inverters
where short circuit ruggedness is a required feature.

Application

AC & DC Motor controls, general purpose inverters, robotics, servo controls

G C E

TO-220F

Features

• Short circuit rated 10us @ TC = 100°C, VGE = 15V

• High speed switching

• Low saturation voltage : V

• High input impedance

CE(sat)

C

C

G

G

E

E

IGBT

= 2.2 V @ IC = 5A

Absolute Maximum Ratings T

Symbol Description SGS5N60RUF Units

V

CES

V

GES

I

C

I

CM (1)

T

SC

P

D

Operating Junction Temperature -55 to +150 °C

T

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C8 A
Collector Current @ T
Pulsed Collector Current 15 A
Short Circuit Withstand Time @ TC = 100°C10 µs
Maximum Power Dissipation @ TC = 25°C35 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Tem p. for soldering

purposes, 1/8” from Case for 5 Seconds

= 25°C unless otherwise noted

C

= 100°C5 A

C

= 100°C14 W

C

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case -- 3.5 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

©2001 Fairchild Semiconductor Corporation

SGS5N60RUF Rev. A

SGS5N60RUF

Electrical Characteristics of IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES
J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

Temperature Coeff. of Breakdown
Voltage
Collector Cut-off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 µA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 5mA, VCE = V

,

= 5A
= 8A

VGE = 15V

,

VGE = 15V

Collector to Emitter
Saturation Voltage

I

C

I

C

GE

5.0 6.0 8.5 V

-- 2.2 2.8 V

-- 2.5 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 67 -- pF
Reverse Transfer Capacitance -- 14 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 354 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 195 280 µJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 323 -- µJ

E

ts

T

sc

Q

g

Q

ge

Q

gc

Le Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH

Turn-On Delay Time

-- 13 -- ns
Rise Time -- 24 -- ns
Turn-Off Delay Time -- 34 50 nS
Fall Time -- 136 200 ns
Turn-On Switching Loss -- 88 -- µJ

V

= 300 V, IC = 5A,

CC

R

= 40Ω, V

G

GE

Inductive Load, T

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 10 7 -- µJ

Turn-On Delay Time

-- 13 -- ns
Rise Time -- 26 -- ns
Turn-Off Delay Time -- 40 60 ns
Fall Time -- 250 350 ns
Turn-On Switching Loss -- 103 -- µJ

= 300 V, IC = 5A,

V

CC

= 40Ω, V

R

G

GE

Inductive Load, T

= 15V,

= 125°C

C

Turn-Off Switching Loss -- 22 0 -- µJ

Short Circuit Withstand Time
Total Gate Charge

Gate-Emitter Charge -- 3 6 nC
Gate-Collector Charge -- 7 14 nC

VCC = 300 V, V

@

TC = 100°C

= 300 V, IC = 5A,

V

CE

V

= 15V

GE

= 15V

GE

10 -- -- µs

-- 16 24 nC

©2001 Fairchild Semiconductor Corporation SGS5N60RUF Rev. A

SGS5N60RUF

25

Common Emitter

℃

TC = 25

20

[A]

C

15

10

Collector Curren t, I

5

0

02468

20V

VGE = 10V

Colle c t or - Emitter Voltage, VCE [V]

Fig 1. Typical Output Chacracteristics

4.0
Common Emitter
V

= 15V

GE

3.5

[V]

CE

3.0

2.5

2.0

1.5

Collec tor - Emitter V oltage, V

1.0

-50 0 50 100 150

Case Temperature, TC [℃]

IC = 3A

10A

5A

15V

12V

20

Common Emitter
V

= 15V

GE

━━

T

= 25℃

16

C

T

= 125℃ ------

[A]

C

C

12

8

Collector Current, I

4

0

110

Collector - Emitter Voltage, VCE [V]

Fig 2. Typical Saturation Voltage
Characteristics

8

6

4

Load Current [A]

2

Duty cycle : 50%

℃

= 100

T

C

Power Dissipation = 9W

0

0.1 1 10 100 1000

VCC = 300V
Load Current : peak of square wave

Frequency [KHz]

Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level

20

Common Emitter

℃

T

= 25

C

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

0 4 8 121620

IC = 3A

Gate - Emitter Voltage, VGE [V]

Fig 5. Saturation Voltage vs. V

©2001 Fairchild Semiconductor Corporation SGS5N60RUF Rev. A

10A

5A

GE

Fig 4. Load Current vs. Frequency

20

Common Emitter

℃

T

= 125

C

16

[V]

CE

12

8

4

Collector - Emitte r Vo l tage, V

0

0 4 8 12 16 20

IC = 3A

Gate - Emitter Voltage, VGE [V]

Fig 6. Saturation Voltage vs. V

10A

5A

GE

SGS5N60RUF

700

600

500

400

300

Capacitance [pF]

200

100

0

110

Collector - Emitter Voltage, VCE [V]

Fig 7. Capaci tance Characterist ics

Common Emitter
V

= 300V, VGE = ±15V

CC

I

= 5A

C

━━

T

= 25℃

C

T

= 125℃ ------

C

Switching Time [ns]

100

10 100

Gate Resistance, RG [Ω]

Common E mitter

= 0V, f = 1MHz

V

GE

℃

T

= 25

C

Cies

Coes

Cres

Toff

Tf

Toff

Tf

Common Emitter
VCC = 300V, VGE = ±15V
IC = 5A

━━

TC = 25℃
TC = 125℃ ------

100

Switching Time [ns]

10

10 100

Gate Resistance, RG [Ω]

Fig 8. Turn-On Characteristics vs.
Gate Resistance

1000

100

Switching Loss [uJ]

10

10 100

Gate Resistance, RG [Ω]

Common Em itte r
V

= 300V, VGE = ±15V

CC

I

= 5A

C

= 25℃

T

C

T

= 125℃ ------

C

Ton

Tr

Eoff
Eon

Eoff

━━

Fig 9. Turn-Off Characteristics vs.

Fig 10. Switching Loss vs. Gate Resi st ance

Gate Resistance

Common Emitter
V

= ±15V, RG = 40Ω

GE

━━

TC = 25℃
T

= 125℃ ------

C

100

Ton

Tr

Switching Time [ns]

10

345678910

Collector Current, IC [A]

Fig 11. Turn-O n C har acteristics vs.
Collector Current

©2001 Fairchild Semiconductor Corporation SGS5N60RUF Rev. A

Common Emitter
V

= ±15V, RG = 40

GE

TC = 25℃

1000

T

= 125℃ ------

C

Toff

Tf

Switching Time [ns]

Toff

Tf

100

345678910

━━

Ω

Collecto r C u rrent, IC [A]

Fig 12. Turn-Off Characteristics vs.
Collector Current

SGS5N60RUF

1000

Common Emitter
V

= ±15V, RG = 40Ω

GE

━━

TC = 25℃

= 125℃ ------

T

C

Eoff

100

Eon

Switching Loss [uJ]

345678910

Collector Curre n t, IC [A]

Fig 13. Switching Loss vs. Collector Current

50

IC MAX. (Pulsed)

10

IC MAX. (Continuous)

[A]

C

1

DC Operation

㎳

1

50us

100us

15

Common Em itte r

= 60Ω

R

L

℃

TC = 25

12

[V]

GE

9

6

3

Gate - Emitter Voltage, V

0

0 3 6 9 12 15 18

VCC = 100V

300V
200V

Gate Charge, Qg [nC]

Fig 14. Gate Charge Char ac te ri st ic s

40

[A]

C

10

0.1

Single Nonrepetitive

Collector Current, I

Pulse T
Curves must be derated
linearly w it h increas e
in temper at ur e

0.01

0.3 1 10 100 1000

= 25

C

℃

Collector-Emitter Voltage, VCE [V]

Fig 15. SOA Characteristic

10

0.5

/W]

℃

1

0.2

0.1

0.05

0.02

0.1

0.01

Thermal Respon se, Zth jc [

0.01
10

-5

single pulse

-4

10

Collector Current, I

1

1 10 100 1000

Fig 16. Turn-Off SOA Characteristics

-3

10

Rectangular Pulse Duration [s ec]

-2

10

Safe Operatin g A rea
VGE = 20V, TC = 100

Collector-Emitter Voltage, VCE [V]

Pdm

t1

t2

Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T

-1

10

0

10

℃

C

1

10

Fig 17. Transient Thermal Impedance of IGBT

©2001 Fairchild Semiconductor Corporation SGS5N60RUF Rev. A

Package Dimension

TO-220F (FS PKG CODE AQ)

10.16 ±0.20

ø3.18 ±0.10

2.54

SGS5N60RUF

±0.20

3.30 ±0.10

15.80 ±0.20

9.75 ±0.30

MAX1.47

0.80 ±0.10

(7.00)

(30°)

6.68 ±0.20

(1.00x45°)

(0.70)

15.87 ±0.20

0.35 ±0.10

2.54TYP

[2.54

±0.20]

2.54TYP

[2.54

±0.20]

0.50

+0.10
–0.05

2.76 ±0.20

9.40 ±0.20

4.70 ±0.20

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation SGS5N60RUF Rev. A

#1

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™

2

E

CMOS™
EnSigna™
FACT™
FACT Quiet Series™

®

FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™

PACMAN

™

POP™
PowerTrench

®

QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
SMART START™
Star* Power™
Stealth™

SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET

®

VCX™

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Sta tus Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

©2001 Fairchild Semiconductor Corporation

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H1