Datasheet SGR6N60UF Datasheet (Fairchild Semiconductor)

SGR6N60UF

SGR6N60UF

Ultra-Fast IGBT

General Description

Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

C

D-PAK

E

G

Features

• High speed switching

• Low saturation voltage : V

• High input impedance

G

G

= 2.1 V @ IC = 3A

CE(sat)

C

C

E

E

IGBT

Absolute Maximum Ratings T

Symbol Description SGR6N60UF Units

V

CES

V

GES

I

C

I

CM (1)

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C6 A
Collector Current @ T
Pulsed Collector Current 25 A
Maximum Power Dissipation @ TC = 25°C30 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

= 25°C unless otherwise noted

C

= 100°C3 A

C

= 100°C12 W

C

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

θJC

R

θJA

Notes :

(2) Mounted on 1” squre PCB (FR4 or G-10 Material)

Thermal Resistance, Junction-to-Case -- 4.0 °C/W
Thermal Resistance, Junction-to-Ambient (PCB Mount)

(2)

-- 50 °C/W

©2002 Fairchild Semiconductor Corporation SGR6N60UF Rev. A1

SGR6N60UF

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES
J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 3mA, VCE = V

,

= 3A
= 6A

VGE = 15V

,

VGE = 15V

Collector to Emitter
Saturation Voltage

I

C

I

C

GE

3.5 4.5 6.5 V

-- 2.1 2.6 V

-- 2.6 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 22 -- pF
Reverse Transfer Capacitance -- 7 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 220 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 82 120 uJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 111 170 uJ

E

ts

Q

g

Q

ge

Q

gc

L

e

Turn-On Delay Time

-- 15 -- ns
Rise Time -- 25 -- ns
Turn-Off Delay Time -- 60 130 ns
Fall Time -- 70 150 ns
Turn-On Switching Loss -- 57 -- uJ

V

= 300 V, IC = 3A,

CC

R

= 80Ω, V

G

GE

Inductive Load, T

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 25 -- uJ

Turn-On Delay Time

-- 22 -- ns
Rise Time -- 32 -- ns
Turn-Off Delay Time -- 80 200 ns
Fall Time -- 122 300 ns
Turn-On Switching Loss -- 65 -- uJ

= 300 V, IC = 3A,

V

CC

= 80Ω, V

R

G

GE

Inductive Load, T

= 15V,

= 125°C

C

Turn-Off Switchi n g Loss -- 46 -- uJ

Total Gate Charge
Gate-Emitter Charge -- 5 8 nC
Gate-Collector Charge -- 4 6 nC

= 300 V, IC = 3A,

V

CE

V

GE

= 15V

-- 15 22 nC

Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH

©2002 Fairchild Semiconductor Corporation

SGR6N60UF Rev. A1

SGR6N60UF

15

Common Emitter
V

= 15V

GE

= 25℃

T

C

12

T

= 125℃

C

[A]

C

9

6

Collector C urrent, I

3

0

0.5 1 10

Colle c tor - Emitter Volta g e , VCE [V]

[A]

C

30

Comm o n Emitt er
TC = 25

25

20

15

10

℃

20V

15V

12V

VGE = 10V

Collector Current, I

5

0

02468

Collector - Em itter Volta g e, VCE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage

[V]

CE

4

Common E mitter
V

= 15V

GE

3

2

Characteristics

8

6A

3A

6

4

VCC = 300V
Load Current : peak of s qu are w ave

IC = 1.5A

1

Collector - Emitter Voltage, V

0

0306090120150

Case Temperature , TC [℃]

Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level

20

16

[V]

CE

12

8

4

Collector - Emit t er Voltage, V

0

048121620

IC = 1.5A

3A

Gate - Emitter Voltage, VGE [V]

6A

Common Emitter

℃

T

= 25

C

Load Current [A]

2

Duty cycle : 50%

℃

= 100

T

C

Power Dissipation = 9W

0

0.1 1 10 100 1000

Frequency [KHz]

Fig 4. Load Current vs. Frequ ency

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

IC = 1.5A

0 4 8 12 16 20

3A

Gate - Emitter Voltage, VGE [V]

6A

Common Emitter
T

= 125

C

℃

Fig 5. Satur ation Voltage vs. V

©2002 Fairchild Semiconductor Corporation

Fig 6. Saturation Voltage vs. VGE

GE

SGR6N60UF Rev. A1

SGR6N60UF

400

350

300

250

200

150

Capacitance [pF]

100

50

0

11030

Cies

Coes
Cres

Common Emitter
V

= 0V, f = 1MHz

GE

℃

T

= 25

C

Switching Time [ns]

Colle c t or - Emitter Volta ge, VCE [V]

Fig 7. Capaci tance Characterist i cs

Fig 8. Turn-On Characteristics vs.
Gate Resistance

600

Common Emitter
V

= 300V, VGE = ±15V

CC

I

= 3A

C

T

= 25℃

C

T

= 125℃

C

Switching Time [ns]

100

50

1 10 100 400

Gate Resistance, RG [Ω]

Toff

Toff

Tf

Tf

100

Common Emitter
VCC = 300V, VGE = ±15V
IC = 3A
TC = 25℃
T

= 125℃

C

10

110100400

Ton

Tr

Gate Resistance, RG [Ω]

300

Commo n Em it te r
V

= 300V, VGE = ±15V

CC

I

= 3A

C

T

= 25℃

C

100

T

= 125℃

C

Eon

Eoff

Eoff

Switching Loss [uJ]

10

5

110100400

Gate Resistance, RG [Ω]

Fig 9. Turn-Off Characteristics vs.
Gate Resistance

200

Common Emitter
V

= 300V, VGE = ±15V

CC

Ω

R

= 80

G

100

TC = 25℃
T

= 125℃

C

Ton

Switchin g T ime [ns]

Tr

10

123456

Collector Current, IC [A]

Fig 11. Turn-O n C haracteristics vs.
Collector Current

©2002 Fairchild Semiconductor Corporation

Fig 10. Switching Loss vs. Gate Resistance

500

Common Emitter
V

= 300V, VGE = ±15V

CC

R

= 80

Ω

G

TC = 25℃
T

= 125℃

C

Toff

Switching Time [ns]

100

Tf

50

123456

Collector Current, IC [A]

Fig 12. Turn-Off Characteristics vs.
Collector Current

SGR6N60UF Rev. A1

SGR6N60UF

200

Common Emitter

= 300V, VGE = ±15V

V

CC

Ω

R

= 80

G

100

TC = 25℃

= 125℃

T

C

Eon

Eon

Switchi ng Loss [uJ]

Eoff

10

Eoff

5

123456

Collector Curr ent, IC [A]

Fig 13. Switching Loss vs. Collector Current

50

Ic MAX. (Pulsed)

10

Ic MAX. (Continuous)

[A]

C

1

DC Operation

Single Nonrepetitive

0.1

Collector Curren t, I

Pulse TC = 25
Curves must be derated
linearly with increase
in temperature

0.01

0.3 1 10 100 1000

℃

Collector-Emitter Voltage, VCE [V]

50us

100us

㎳

1

15

Common E mitter

Ω

RL = 100

℃

Tc = 25

12

[ V ]

GE

9

300 V

6

3

Gate - Emitter Voltage, V

0

03691215

VCC = 100 V

200 V

Gate Charge, Qg [ nC ]

Fig 14. Gate Charge Characteristics

50

10

[A]

C

1

Collector Current, I

Safe Operating Area

0.1
1 10 100 1000

VGE=20V, TC=100oC

Collector-Emitter Voltage, VCE [V]

Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics

10

0.5

/W]

℃

1

0.2

0.1

0.05

0.02

0.1

0.01

0.01

-5

10

single pulse

-4

10

-3

10

-2

10

10

Thermal Resp on se, Zthjc [

-1

Pdm

Duty factor D = t1 / t2
Peak Tj = Pdm

10

Rectangular Pulse Duration [sec]

Fig 17. Transient Thermal Impedance of IGBT

©2002 Fairchild Semiconductor Corporation

t1

t2

Zthjc + T

×

C

0

1

10

SGR6N60UF Rev. A1

Package Dimension

SGR6N60UF

D-PAK

6.60 ±0.20

0.60 ±0.20

0.80 ±0.20

MAX0.96

2.30TYP

[2.30±0.20]

5.34 ±0.30
(4.34)(0.50) (0.50)

0.76 ±0.10

2.30TYP

[2.30±0.20]

2.70 ±0.20

0.70 ±0.20

6.10 ±0.20

9.50 ±0.30

±0.10

0.91

0.89 ±0.10

6.60 ±0.20
(5.34)

(5.04)
(1.50)

2.30 ±0.10

0.50 ±0.10

0.50 ±0.10

1.02 ±0.20

2.30 ±0.20

(0.90)

(0.70)

MIN0.55

(1.00)

(2XR0.25)

6.10 ±0.20

9.50 ±0.30

©2002 Fairchild Semiconductor Corporation SGR6N60UF Rev. A1

2.70 ±0.20
(0.10) (3.05)

0.76 ±0.10

Dimensions in Millimeters

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2

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E
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STAR*POWER is used under license

®

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2

C™

I
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®

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®

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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H5©2002 Fairchild Semiconductor Corporation