Datasheet SGR2N60UFD Datasheet (Fairchild Semiconductor)

SGR2N60UFD

IGBT

SGR2N60UFD

Ultra-Fast IGBT

General Description

Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

C

D-PAK

E

G

Absolute Maximum Ratings T

Symbol Description SGR2N60UFD Units

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C2.4 A
Collector Current @ T
Pulsed Collector Current 10 A
Diode Continuous Forward Current @ TC = 100°C1.5 A
Diode Maximum Forward Current 12 A
Maximum Power Dissipation @ TC = 25°C25 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds

= 25°C unless otherwise noted

C

Features

• High speed switching

• Low saturation voltage : V

• High input impedance

• CO-PAK, IGBT with FRD : t

G

G

= 100°C1.2 A

C

= 100°C10 W

C

= 2.1 V @ IC = 1.2A

CE(sat)

= 45ns (typ.)

rr

C

C

E

E

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

(IGBT) Thermal Resistance, Junction-to-Case -- 5.0 °C/W

θJC

R

(DIODE) Thermal Resistance, Junction-to-Case -- 5.0 °C/W

θJC

R

θJA

Notes :

(2) Mounted on 1” squre PCB (FR4 or G-10 Material)

©2002 Fairchild Semiconductor Corporation SGR2N60UFD Rev. A1

Thermal Resistance, Junction-to-Ambient (PCB Mount)

(2)

-- 50 °C/W

SGR2N60UFD

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES
VCES

J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 1.2mA, VCE = V

,

Collector to Emitter
Saturation Voltage

I

C

I

C

= 1.2A
= 2.4A

VGE = 15V

,

VGE = 15V

GE

3.5 4.5 6.5 V

-- 2.1 2.6 V

-- 2.6 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 18 -- pF
Reverse Transfer Capacitance -- 4 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 98 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 43 70 uJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 63 100 uJ

E

ts

Q

g

Q

ge

Q

gc

L

e

Turn-On Delay Time

-- 15 -- ns
Rise Time -- 20 -- ns
Turn-Off Delay Time -- 80 130 ns
Fall Time -- 95 160 ns
Turn-On Switching Loss -- 30 -- uJ

V

= 300 V, IC = 1.2A,

CC

R

= 200Ω, V

G

GE

Inductive Load, T

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 13 -- uJ

Turn-On Delay Time

-- 19 -- ns
Rise Time -- 24 -- ns
Turn-Off Delay Time -- 115 200 ns
Fall Time -- 176 250 ns
Turn-On Switching Loss -- 36 -- uJ

= 300 V, IC = 1.2A,

V

CC

= 200Ω, V

R

G

GE

Inductive Load, T

= 15V,

= 125°C

C

Turn-Off Switchi ng Lo s s - - 27 -- uJ

Total Gate Charge
Gate-Emitter Charge -- 3 5 nC
Gate-Collector Charge -- 1.5 3 nC

= 300 V, IC = 1.2A,

V

CE

V

GE

= 15V

-- 9 14 nC

Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH

Electrical Characteristics of DIODE T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

T

V

FM

t

rr

I

rr

Q

rr

©2002 Fairchild Semiconductor Corporation

Diode Forward Voltage IF = 2A

Diode Reverse Recovery Time

Diode Peak Reverse Recovery
Current

Diode Reverse Recovery Charge

I

= 2A,

F

di/dt = 200A/us

= 25°C

C

= 100°C

T

C

TC = 25°C

= 100°C

T

C

T

= 25°C

C

= 100°C

T

C

T

= 25°C

C

= 100°C

T

C

-- 1.4 1.7

-- 1.3 --

-- 45 80

-- 75 --

-- 1.5 3.0

-- 2.5 --

-- 60 135

-- 120 --

V

ns

A

nC

SGR2N60UFD Rev. A1

SGR2N60UFD

12

[A]

C

Common Emitter
TC = 25

10

8

6

4

℃

20V

15V

12V

VGE = 10V

Collector Current, I

2

0

02468

Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics

4

Common Emitter
V

= 15V

[V]

Collector - Em i t t er Voltage, V

GE

CE

3

2

1

0

0306090120150

2.4A

1.2A

IC = 0.6A

Case Temperature, TC [℃]

6

Common Emitter
V

= 15V

GE

= 25℃

T

C

5

T

= 125℃

[A]

Collector Current, I

C

C

4

3

2

1

0

0.5 1 10

Collector - Emitter Voltage, VCE [V]

Fig 2. Typical Saturation Voltage
Characteristics

3.0

2.5

2.0

1.5

Load Current [A]

1.0

0.5

Duty cycle : 50%

℃

T

= 100

C

Power Dissipation = 4W

0.0

0.1 1 10 100 1000

VCC = 300V
Load Current : peak of square wave

Frequency [KHz]

Fig 3. Saturation Voltage vs. Case
Tem perature at Variant Current Level

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

IC = 0.6A

048121620

1.2A

2.4A

Gate - Emitter Voltage, VGE [V]

Fig 5. Satur ation Voltage vs. V

©2002 Fairchild Semiconductor Corporation

Fig 4. Load Current vs. Frequ ency

Common Emitter

℃

T

= 25

C

Fig 6. Saturation Voltage vs. VGE

GE

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

IC = 0.6A

048121620

2.4A

1.2A

Gate - Emitter Voltage, VGE [V]

Common Emitter

℃

T

= 125

C

SGR2N60UFD Rev. A1

SGR2N60UFD

160

120

80

Capacitance [pF]

40

0

11030

Cies

Coes

Cres

Common Emitter
V

= 0V, f = 1MHz

GE

℃

T

= 25

C

Switch i ng Tim e [ns]

Collector - Emitter Voltage, VCE [V]

Fig 7. Capaci tance Chara cteristi cs

Fig 8. Turn-On Characteristics vs.
Gate Resistance

600

Common Emitter
V

= 300V, VGE = ±15V

CC

I

= 1.2A

C

= 25℃

T

C

T

= 125℃

C

Tf

Toff

Switching Time [ns]

100

Toff

Tf

100

Common Emitter
VCC = 300V, VGE = ±15V
IC = 1.2A
TC = 25℃

= 125℃

T

C

10

10 100 500

Gate Resistance, RG [Ω]

100

Common Emitter
V

= 300V, VGE = ±15V

CC

= 1.2A

I

C

T

= 25℃

C

= 125℃

T

C

Switching Loss [uJ]

10

Ton

Tr

Eon

Eoff

Eoff

50

10 100 500

Gate Resistance, RG [Ω]

Fig 9. Turn-Off Characteristics vs.
Gate Resistance

100

Common Emitter
V

= 300V, VGE = ±15V

CC

Ω

R

= 200

G

TC = 25℃
T

= 125℃

C

Ton

Switching Time [ns]

Tr

10

0.5 1.0 1.5 2.0 2.5

Collector Curre n t, IC [A]

Fig 11. Tur n-On Characteristics vs.
Collector Current

©2002 Fairchild Semiconductor Corporation

5

10 100 500

Gate Resistance, RG [Ω]

Fig 10. Switching Loss vs. Gate Resistance

1000

Common Emitter
V

= 300V, VGE = ±15V

CC

Ω

R

= 200

G

TC = 25℃
T

= 125℃

C

Toff

Toff

Tf

Switching Time [ns]

Tf

100

0.5 1.0 1.5 2.0 2.5

Collector Current, IC [A]

Fig 12. Turn-Off Characteristics vs.
Collector Current

SGR2N60UFD Rev. A1

SGR2N60UFD

100

Common Emitter
V

= 300V, VGE = ±15V

CC

R

= 200

Ω

G

TC = 25℃

= 125℃

T

C

Eon
Eon

Switching Loss [uJ]

Eoff

10

Eoff

0.5 1.0 1.5 2.0 2.5

Collector Curre n t, IC [A]

Fig 13. Switching Loss vs. Collector Current

30

IC MAX. (Pulsed)

10

[A]

C

1

IC MAX. (Continuous)

DC Operation

50us

100us

㎳

1

15

Common Emitter
RL = 250

Ω

℃

Tc = 25

12

[ V ]

GE

9

300 V

6

VCE = 100 V

3

200 V

Gate - Emitter Voltage, V

0

0246810

Gate Charge, Qg [ nC ]

Fig 14. Gate Charge Characteristics

20

10

[A]

C

1

0.1

Single Nonrepetitive

Collec tor Current, I

Pulse TC = 25
Curves must be derated
linearly with increase
in temperature

0.01

0.3 1 10 100 1000

℃

Collector-Emitter Voltage, VCE [V]

Fig 15. SOA Characteristics

10

0.5

/W]

℃

0.2

1

0.1

0.05

0.02

0.1

0.01

0.01

-5

10

single pulse

-4

10

Thermal Resp on se, Zthjc [

Collector Current, I

0.1
1 10 100 1000

Fig 16. Turn-Off SOA Characteristics

-3

10

Rectangular Pulse Duration [sec]

-2

10

Safe Operating Are a
VGE=20V, TC=100oC

Collector-Emitter Voltage, VCE [V]

Pdm

t1

t2

Duty factor D = t1 / t2
Peak Tj = Pdm

-1

10

Zthjc + T

×

0

10

C

1

10

©2002 Fairchild Semiconductor Corporation

Fig 17. Transient Thermal Impedance of IGBT

SGR2N60UFD Rev. A1

SGR2N60UFD

30

TC = 25℃
TC = 100℃

10

[A]

F

1

Forward Current, I

0.1
0123

Forward Voltage Drop, VFM [V]

120

VR = 200V
I

= 2A

F

T

= 25℃

100

C

[nC]

rr

TC = 100℃

80

60

40

Stored Recovery Charge, Q

20

10

VR = 200V
IF = 2A
TC = 25℃
TC = 100℃

[A]

rr

Reverse Recovery Current, I

1

100 500

di/dt [A/us]

Fig 19. Revers e R ecovery CurrentFig 18. Forward Characteristics

100

80

[ns]

rr

60

40

20

Reverce Recovery Time, t

VR = 200V
IF = 2A
TC = 25℃
TC = 100℃

0

100 500

di/dt [A /us]

0

100 500

di/dt [A/us]

Fig 20. Stored Charge Fig 21. Reverse Recovery Time

©2002 Fairchild Semiconductor Corporation

SGR2N60UFD Rev. A1

Package Dimension

SGR2N60UFD

D-PAK

6.60 ±0.20

0.60 ±0.20

0.80 ±0.20

MAX0.96

2.30TYP

[2.30±0.20]

5.34 ±0.30
(4.34)(0.50) (0.50)

0.76 ±0.10

2.30TYP

[2.30±0.20]

2.70 ±0.20

0.70 ±0.20

6.10 ±0.20

9.50 ±0.30

±0.10

0.91

0.89 ±0.10

6.60 ±0.20
(5.34)

(5.04)
(1.50)

2.30 ±0.10

0.50 ±0.10

0.50 ±0.10

1.02 ±0.20

2.30 ±0.20

(0.90)

(0.70)

MIN0.55

(1.00)

(2XR0.25)

6.10 ±0.20

9.50 ±0.30

©2002 Fairchild Semiconductor Corporation SGR2N60UFD Rev. A1

2.70 ±0.20
(0.10) (3.05)

0.76 ±0.10

Dimensions in Millimeters

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®

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only .

Rev. H5©2002 Fairchild Semiconductor Corporation