Datasheet SGP5N60RUF Datasheet (Fairchild Semiconductor)

SGP5N60RUF

SGP5N60RUF

Short Circuit Rated IGBT

General Description

Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and ge neral inverters
where short circuit ruggedness is a required feature.

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

G C E

TO-220

Features

• Short circuit rated 10us @ TC = 100°C, VGE = 15V

• High speed switching

• Low saturation voltage : V

• High input impedance

G

G

= 2.2 V @ IC = 5A

CE(sat)

C

C

E

E

IGBT

Absolute Maximum Ratings T

Symbol Description SGP5N60RUF Units

V

CES

V

GES

I

C

I

CM (1)

T

SC

P

D

Operating Junction Temperature -55 to +150 °C

T

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C8 A
Collector Current @ T
Pulsed Collector Current 15 A
Short Circuit Withstand Time @ TC = 100°C10 us
Maximum Power Dissipation @ TC = 25°C60 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Tem p. for So ldering

Purposes, 1/8” from Case for 5 Seconds

= 25°C unless otherwise noted

C

= 100°C5 A

C

= 100°C25 W

C

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case -- 2.0 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

©2002 Fairchild Semiconductor Corporation SGP5N60RUF Rev. A1

SGP5N60RUF

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES
J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 5mA, VCE = V

,

= 5A
= 8A

VGE = 15V

,

VGE = 15V

Collector to Emitter
Saturation Voltage

I

C

I

C

GE

5.0 6.0 8.5 V

-- 2.2 2.8 V

-- 2.5 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 67 -- pF
Reverse Transfer Capacitance -- 14 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 354 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 195 280 uJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 323 -- uJ

E

ts

T

sc

Q

g

Q

ge

Q

gc

L

e

Turn-On Delay Time

-- 13 -- ns
Rise Time -- 24 -- ns
Turn-Off Delay Time -- 34 50 n s
Fall Time -- 136 200 ns
Turn-On Switching Loss -- 88 -- uJ

V

= 300 V, IC = 5A,

CC

R

= 40Ω, V

G

GE

Inductive Load, T

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 10 7 -- uJ

Turn-On Delay Time

-- 13 -- ns
Rise Time -- 26 -- ns
Turn-Off Delay Time -- 40 60 n s
Fall Time -- 250 350 ns
Turn-On Switching Loss -- 103 -- uJ

= 300 V, IC = 5A,

V

CC

= 40Ω, V

R

G

GE

Inductive Load, T

= 15V,

= 125°C

C

Turn-Off Switching Loss -- 22 0 -- uJ

Short Circuit Withstand Time
Total Gate Charge

Gate-Emitter Charge -- 3 6 nC
Gate-Collector Charge -- 7 14 nC

VCC = 300 V, V

@

TC = 100°C

= 300 V, IC = 5A,

V

CE

V

= 15V

GE

= 15V

GE

10 -- -- us

-- 16 24 nC

Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH

©2002 Fairchild Semiconductor Corporation

SGP5N60RUF Rev. A1

SGP5N60RUF

25

Common Emitter

℃

TC = 25

20

[A]

C

15

10

Collector Curren t, I

5

0

02468

20V

VGE = 10V

Colle c t or - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics

4.0
Common Emitter
V

= 15V

GE

3.5

[V]

CE

3.0

2.5

2.0

1.5

Collec tor - Emitter V oltage, V

1.0

-50 0 50 100 150

Case Temperature, TC [℃]

IC = 3A

10A

5A

15V

12V

20

Common Emitter
V

= 15V

GE

━━

T

= 25℃

16

C

T

= 125℃ ------

[A]

C

C

12

8

Collector Current, I

4

0

110

Collector - Emitter Voltage, VCE [V]

Fig 2. Typical Saturation Voltage Characteristics

10

8

6

4

Load Current [A]

2

Duty cycle : 50%

℃

T

= 100

C

Power Dissipation = 12W

0

0.1 1 10 100 1000

VCC = 300V
Load Current : pe ak of square wave

Frequency [KHz]

Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level

20

Common Emitter

℃

T

= 25

C

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

0 4 8 121620

IC = 3A

10A

5A

Gate - Emitter Voltage, VGE [V]

Fig 5. Saturation Voltage vs. V

©2002 Fairchild Semiconductor Corporation

GE

Fig 4. Load Current vs. Frequency

20

Common Emitter

℃

T

= 125

C

16

[V]

CE

12

8

4

Collector - Emitte r Vo l tage, V

0

0 4 8 12 16 20

IC = 3A

Gate - Emitter Voltage, VGE [V]

Fig 6. Saturation Voltage vs. V

10A

5A

GE

SGP5N60RUF Rev. A1

SGP5N60RUF

700

600

500

400

300

Capacitance [pF]

200

100

0

110

Collector - Emitter Voltage, VCE [V]

Fig 7. Capaci tance Characterist ics

Common Emitter
V

= 300V, VGE = ±15V

CC

I

= 5A

C

━━

T

= 25℃

C

T

= 125℃ ------

C

Switching Time [ns]

100

10 100

Gate Resistance, RG [Ω]

Common E mitter

= 0V, f = 1MHz

V

GE

℃

T

= 25

C

Cies

Coes

Cres

Toff

Tf

Toff

Tf

Fig 8. Turn-On Characteristics vs.
Gate Resistance

1000

100

Switching Loss [uJ]

10

10 100

Gate Resistance, RG [Ω]

Common Em itte r
V

= 300V, VGE = ±15V

CC

I

= 5A

C

= 25℃

T

C

T

= 125℃ ------

C

Eoff
Eon

Eoff

━━

Fig 9. Turn-Off Characteristics vs.
Gate Resistance

Common Emitter
V

= ±15V, RG = 40

GE

TC = 25℃
T

= 125℃ ------

C

100

Switching Time [ns]

10

345678910

Ω

━━

Collector Current, IC [A]

Fig 11. Turn-O n C har acteristics vs.
Collector Current

©2002 Fairchild Semiconductor Corporation

Ton

Fig 10. Switching Loss vs. Gate Resi st ance

Common Emitter
V

= ±15V, RG = 40

GE

TC = 25℃

1000

T

= 125℃ ------

C

Tr

Switching Time [ns]

Toff

Tf

Toff

Tf

100

345678910

━━

Ω

Collecto r C u rrent, IC [A]

Fig 12. Turn-Off Characteristics vs.
Collector Current

SGP5N60RUF Rev. A1

SGP5N60RUF

1000

Common Emitter
V

= ±15V, RG = 40

GE

TC = 25℃

= 125℃ ------

T

C

━━

Ω

Eoff

100

Eon

Switching Loss [uJ]

345678910

Collector Curre n t, IC [A]

Fig 13. Switching Loss vs. Collector Current

50

10

[A]

C

1

Ic MAX. (Pulsed)

Ic MAX. (Continuous)

DC Operation

50us

100us

㎳

1

15

Common Em itte r

= 60

Ω

R

L

℃

TC = 25

12

[V]

GE

9

6

3

Gate - Emitter Voltage, V

0

0 3 6 9 12 15 18

VCC = 100V

300V
200V

Gate Charge, Qg [nC]

Fig 14. Gate Charge Char ac te ri st ic s

40

[A]

C

10

Single Nonrepetitive

Collector Cu rrent, I

0.1

Pulse T
Curves m us t be de ra te d
linearly w ith increase
in temper atur e

0.01

0.1 1 10 100 1000

= 25

C

℃

Collector-Emitter Voltage, VCE [V]

Fig 15. SOA Characteristic

10

/W]

℃

0.5

1

0.2

0.1

0.05

0.1

0.02

0.01

Thermal Response, Zthjc [

0.01

single pulse

-5

10

-4

10

Collector Current, I

1

1 10 100 1000

Fig 16. Turn-Off SOA Characteristics

-3

10

Rectangular Pulse Duration [sec]

-2

10

Safe Operatin g A rea
VGE = 20V, TC = 100

Collector-Emitter Voltage, VCE [V]

Pdm

t1

t2

Duty fac to r D = t1 / t2
Peak Tj = Pdm

-1

10

×

Zthjc + T

0

10

℃

C

1

10

©2002 Fairchild Semiconductor Corporation

Fig 17. Transient Thermal Impedance of IGBT

SGP5N60RUF Rev. A1

Package Dimension

SGP5N60RUF

TO-220

(1.70)

9.20 ±0.2013.08 ±0.20

1.30 ±0.10

(1.46)

(1.00)

1.27 ±0.10

9.90 ±0.20
(8.70)

ø3.60 ±0.10

(3.70)(3.00)

(45°)

1.52 ±0.10

2.80 ±0.1015.90 ±0.20

18.95MAX.

4.50 ±0.20

+0.10

1.30

–0.05

10.08 ±0.30

2.54TYP

[2.54

±0.20]

0.80 ±0.10

2.54TYP

[2.54

±0.20]

0.50

+0.10
–0.05

2.40 ±0.20

10.00 ±0.20

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation SGP5N60RUF Rev. A1

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Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H5©2002 Fairchild Semiconductor Corporation