Page 1
Product Description
Stanford Microdevices SGL-0263 is a high performance
cascadeable 50-ohm low noise amplifier designed for
operation at voltages as low as 2.5V. The SGL-0263 can be
operated at 3V for low power or 4V for medium power
applications. This RFIC uses the latest Silicon Germanium
Heterostructure Bipolar Transistor (SiGe HBT) process
featuring 1 micron emitters with F
The SGL-0263 requires input LC match, an RF choke, DC
blocking and bypass capacitors for external components.
This device has an internal temperature compensation
circuit and can be operated directly from 3-4V supply.
Small Signal Gain vs. Frequency
20
15
10
dB
5
0
1.81.9 2 2.12.22.32.42.5
Frequency GHz
up to 50 GHz.
T
3V,11mA
4V,23mA
Preliminary
Preliminary
SGL-0263
1900-2400 MHz Low Noise Amplifier
50 Ohm, Silicon Germanium
Product Features
Low Noise Figure
High Input Intercept
Internal Temp. Compensation Circuit
Unconditionally Stable
Low Power Consumption
Single Voltage Supply
Small Package: SOT-363
Applications
Receivers
Cellular, Fixed Wireless, Land Mobile
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Z
0
P
Bd1
PII
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S
12
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-RWSVtupnI
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S
21
I
D
R
l-j,)dael-noitcnuj(ecnatsiseRlamrehT
ht
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
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noitalosIesreveR
tnerruCeciveD Am0.80.110.410.32
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noisserpmoCBd1tarewoPtuptuO
tnioPtpecretnIredrOdrihTtupnI
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smhO05=
zHM0091=f
zHM0042=f
zHM0091=f
zHM0042=f
zHM0091=f
zHM0042=f
zHM0091=f
zHM0042=f
zHM0091=f
zHM0042=f
zHM0091=f
zHM0042=f
zHM0091=f
zHM0042=f
Phone: (800) SMI-MMIC http://www.stanfordmicro.com
stinU
mBd
mBd
mBd
mBd
Bd
Bd
Bd
Bd
-
-
-
-
Bd
Bd
o
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1
V3=ccV
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5.210.41
V3=ccV
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8.4
0.6
3.7
6.01
4.11
3.1
8.1
1:4.1
1:3.1
1:5.1
1:5.1
6.22
7.12
V3=ccV
.xaM
5.515.41
EDS-101502 Rev A
.pyT
6.01
1.11
9.11
2.51
0.21
7.1
3.2
1:2.1
1:4.1
1:4.1
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9.12
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Page 2
SGL-0263 1.9-2.4GHz SiGe Low Noise Amplifier
Absolute Maximum Ratings
Preliminary
Preliminary
Operation of this device above any one of these
parameters may cause permanent damage.
Bias Conditions should also satisfy the following
expression: I
#niPnoitcnuFnoitpircseDcitamehcSeciveD
1 C/N
2 C/N.noitcennoCoN
3 NIFRfoesuehtseriuqernipsihT.niptupniFR
4 ccVebdluohsnipsihT.noitcennocylppuS
5 DNGtsebroF.dnuorgotnoitcennoC
6 TUOFR
(max) < (TJ - TOP)/Rth,j-l
DVD
ccV
.noitcennoCoN
retemaraPeulaVtinU
tnerruCylppuS54Am
erutarepmeTgnitarepO58+ot04-Cº
rewoPtupnImumixaM01mBd
egnaRerutarepmeTegarotS051+ot04-Cº
erutarepmeTnoitcnuJgnitarepO051+Cº
)ledoMydoBnamuH(egatlovDSE004V
Vcc
RF In
Bias ckt
with
temp.
comp.
RF Out / Vcc
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.noitarepofoycneuqerfehtrofnesohc
.)s(roticapacelbatiusahtiwdessapyb
otesolcsaselohaivesuecnamrofrep
.elbissopsasdaeldnuorg
nipsihT.ylppusCDdnatuptuoFR
CDlanretxenafoesuehtseriuqer
ehtrofnesohcroticapacgnikcolb
.noitarepofoycneuqerf
Application Schematic
0.1µF
22pF
Rbias
Vs
ylppuS
V3V4V5V6V5.7
)sV(egatloV
(saibR W)
019081072034
Am11,V3
(saibR W)
-0 3428051
Am32,V4
seulaVrotsiseRsaiBdednemmoceR
22nH
50 Ohm
microstrip
68pF
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
2.2nH
1pF
50 Ohm
microstrip
The ratio of length
and width should
be between 2 to 3.
Phone: (800) SMI-MMIC http://www.stanfordmicro.com
4
63
5
2
50 Ohm
microstrip
68pF
EDS-101502 Rev A
Page 3
Bias Voltage: 3V
S21 vs. Frequency
25
20
15
dB
10
5
0
00.511.522.533.544.55
GHz
SGL-0263 1.9-2.4GHz SiGe Low Noise Amplifier
NF vs. Frequency
-40C
+25C
+85C
5
4.5
4
3.5
3
2.5
dB
2
1.5
1
0.5
0
0 500 1000 1500 2000 2500
GHz
Preliminary
Preliminary
-40C
+25C
85
0
-5
dB
-10
-15
-40C
+25C
+85C
-20
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
GHz GHz
Typical S-Parameters including evaluation board @ T = 25ºC
zHGqerF Bd gnA Bd gnA Bd gnA Bd gnA
50.0
01.0
05.0
00.1
02.1
04.1
06.1
08.1
09.1
00.2
01.2
02.2
03.2
04.2
05.2
06.2
08.2
00.3
00.4
00.5
11S 12S 21S 22S
56.1-56.01-08.919.901-04.56-30.671-74.0-94.761
55.1-55.12-23.5136.921-28.15-13.93117.0-95.241
24.2-48.711-40.2270.60134.03-71.3424.5-59.4
93.6-23.84164.8142.2124.62-87.33-17.11-97.78-
38.7-18.51172.7163.81-64.52-37.75-56.21-67.711-
84.9-67.3891.6134.74-15.42-79.18-35.31-95.741-
74.11-07.1581.5109.57-47.32-40.501-61.41-98.571-
11.41-05.6162.4181.401-90.32-25.821-34.41-07.351
37.51-27.4-28.3183.811-96.22-27.141-65.41-80.931
17.71-42.03-63.3185.231-64.22-55.351-64.41-60.421
65.91-33.16-39.2100.741-31.22-94.561-64.41-18.601
55.02-72.101-74.2182.161-80.22-82.871-42.41-39.09
24.91-70.341-89.1160.671-96.12-02.76160.41-20.47
62.71-92.471-54.1160.96166.12-62.55108.31-45.75
32.51-67.95188.0124.45185.12-55.24106.31-93.04
72.31-81.93172.0134.93116.12-44.92192.31-64.22
46.01-24.40108.819.90158.12-14.10128.21-98.11-
40.9-11.4780.729.1874.22-64.6785.21-25.64-
78.5-22.43-73.2-93.63-28.62-99.23-15.31-70.861
10.3-33.021-14.11-50.831-77.23-90.231-30.91-63.01
0
-5
-10
dB
-15
-20
-25
00.511.52 2.533.544.55
S22 vs. FrequencyS11 vs. Frequency
-40C
+25C
+85C
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC http://www.stanfordmicro.com
3
EDS-101502 Rev A
Page 4
Bias Voltage: 4V
S21 vs. Frequency
30
25
20
15
dB
10
5
0
00.511.522.533.544.55
GHz
SGL-0263 1.9-2.4GHz SiGe Low Noise Amplifier
NF vs. Frequency
-40C
+25C
+85C
5
4.5
4
3.5
3
2.5
dB
2
1.5
1
0.5
0
00.511.522.5
GHz
Preliminary
Preliminary
-40C
+25C
85
0
-5
-10
dB
-15
-40C
+25C
+85C
-20
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
GHz GHz
Typical S-Parameters including evaluation board @ T = 25ºC
zHGqerF Bd gnA Bd gnA Bd gnA Bd gnA
50.0
01.0
05.0
00.1
02.1
04.1
06.1
08.1
09.1
00.2
01.2
02.2
03.2
04.2
05.2
06.2
08.2
00.3
00.4
00.5
11S 12S 21S 22S
4179.2-46.11-687.315.111-161.16-29.951-2784.0-15.761
1438.2-907.32-952.9161.331-412.25-7.0311847.0-53.241
7145.4-65.821-813.42241.49340.23-284.14220.7-2747.5
3644.9-69.93176.911148.389.72-892.03-92.41-740.97-
730.11-62.801803.81354.52-612.62-156.15-402.51-37.801-
190.31-276.67101.71846.35-440.52-135.37-759.51-21.831-
8.51-218.44500.61802.18-453.42-118.79-215.61-59.761-
177.91-438.4330.5178.801-285.32-83.221-395.61-11.061
383.22-81.32-805.4167.221-520.32-32.331-264.61-33.441
204.42-352.66-810.4135.631-136.22-42.741-904.61-76.721
317.32-99.411-585.3145.051-822.22-86.951-242.61-9.801
334.12-11.451-580.316.461-211.22-77.271-697.51-223.29
681.81-91.871845.219.871-209.12-86.471833.51-686.47
229.51-58.851430.2129.661188.12-21.161289.41-985.65
390.41-70.141104.1165.251377.12-39.641135.41-863.93
964.21-46.421767.0148.731305.12-98.431700.41-473.02
143.01-178.492813.993.901549.12-24.701941.31-233.41-
7189.8-980.864756.7781.28744.22-117.28634.21-953.94-
1869.5-328.43-5124.1-807.53-528.62-675.33-401.21-38.361
2399.2-98.911-505.01-12.831-423.13-44.131-786.51-7985.9
0
-5
-10
dB
-15
-20
-25
00.511.522.533.544.55
S22 vs. FrequencyS11 vs. Frequency
-40C
+25C
+85C
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC http://www.stanfordmicro.com
4
EDS-101502 Rev A
Page 5
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
Preliminary
Preliminary
SGL-0263 1.9-2.4GHz SiGe Low Noise Amplifier
2.20 (0 .087)
2.00 (0 .079)
L1
123
Package Dimensions
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
456
1.30 (0.051)
REF.
1.35 (0.053)
1.15 (0.045)
0.650 BSC (0.025)
1.00 (0.039)
0.80 (0.031)
1C/N
2C/N
3niFR
4ccV
5DNG
6ccV/tuoFR
0.30 REF.
0.035
Note: Pin 1 is on lower left when
noitangiseDniP
you can read package marking
Pad Layout
0.026
0.016
0.425 (0.017)
0.075
TYP.
0.20 (0.0080
0.10 (0.004)
0.25 (0.010)
0.15 (0.006)
10°
0.30 (0.012)
0.10 (0.0040
DIMENSIONS ARE IN INCHES [MM]
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5
EDS-101502 Rev A
Page 6
SGL-0263 1.9-2.4GHz SiGe Low Noise Amplifier
Evaluation Board layout
L1
Preliminary
Preliminary
Suggested Components
erutcafunaMrebmuNtraPnoitpircseDeulaV
mhoRKC010A581HCM
mhoRKJ002A581HCM
mhoRKJ086A581HCMroticapaCFp86
mhoRKZ401NF281HCM
OKOTS2N2HF-8061LL
OKOTJN22HF-8061LL
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC http://www.stanfordmicro.com
6
roticapaCFp1
roticapaCFp22
roticapaC
rotcudnIHn2.2
rotcudnIHn22
1.0
Fu
EDS-101502 Rev A
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